公开(公告)号：US20240213027A1

公开(公告)日：2024-06-27

申请号：US18545183

申请日：2023-12-19

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Holger Saare ,  Sukanya Datta

IPC: H01L21/285 ,  H01J37/32

CPC classification number: H01L21/28568 ,  H01J37/32522 ,  C23C16/06 ,  H01J2237/2001 ,  H01J2237/332

Abstract: Methods and systems of depositing molybdenum are disclosed. Exemplary methods include using a plasma-assisted deposition process to non-selectively and/or conformally form plasma-deposited molybdenum on a first material and on a second material.

公开(公告)号：US20240218501A1

公开(公告)日：2024-07-04

申请号：US18396835

申请日：2023-12-27

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Sukanya Datta ,  Jan Willem Maes

IPC: C23C16/08 ,  C23C16/04

CPC classification number: C23C16/08 ,  C23C16/04

Abstract: The disclosure relates to methods of selectively depositing material comprising molybdenum on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The methods comprise providing a substrate in a reaction chamber, and performing at least one super-cycle comprising a halide sub-cycle and an oxyhalide sub-cycle. The halide sub-cycle comprises providing molybdenum halide precursor into the reaction chamber in a vapor phase, and the oxyhalide sub-cycle comprises providing molybdenum oxyhalide precursor into the reaction chamber in a vapor phase and providing a reactant into the reaction chamber to deposit material comprising molybdenum on the first surface of the substrate. The disclosure further relates to molybdenum layer, to a semiconductor structure and a device, and to vapor deposition assemblies for selectively depositing material comprising molybdenum on a substrate.

公开(公告)号：US20230212740A1

公开(公告)日：2023-07-06

申请号：US18147376

申请日：2022-12-28

Applicant: ASM IP Holding, B.V.

Inventor： Chiyu Zhu ,  Sukanya Datta ,  Jan Willem Maes

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/02 ,  H01L21/02

CPC classification number: C23C16/08 ,  C23C16/45525 ,  C23C16/0227 ,  H01L21/02046

Abstract: The present disclosure relates to methods and apparatuses for depositing a conductive layer on another conductive layer of a substrate. The method comprises providing the substrate comprising the first conductive layer in a reaction chamber, providing a cleaning agent comprising a metal halide into the reaction chamber in a vapor phase to clean the substrate and providing a second material precursor into the reaction chamber in a vapor phase to deposit the second conductive layer on the first conductive layer. The disclosure further relates to a method of forming a semiconductor structure and to a semiconductor processing assembly.

公开(公告)号：US20240218505A1

公开(公告)日：2024-07-04

申请号：US18396829

申请日：2023-12-27

Applicant: ASM IP Holding B.V.

Inventor： Jiyeon Kim ,  YoungChol Byun ,  Petri Raisanen ,  Sang Ho Yu ,  Sukanya Datta ,  Chiyu Zhu ,  Jan Willem Maes ,  Saima Ali ,  Elina Färm

IPC: C23C16/42 ,  C23C16/04

CPC classification number: C23C16/42 ,  C23C16/04

Abstract: Methods of forming molybdenum silicide are disclosed. Exemplary methods can include selectively forming molybdenum silicide on a first surface relative to a second surface. Additionally or alternatively, exemplary methods can include a cleaning step prior to forming the molybdenum silicide.

公开(公告)号：US20230163028A1

公开(公告)日：2023-05-25

申请号：US18148687

申请日：2022-12-30

Applicant: ASM IP Holding B.V.

Inventor： Salvatore Luiso ,  YoungChol Byun ,  Holger Saare ,  Jaebeom Lee ,  Sukanya Datta ,  Jiyeon Kim ,  Petri Raisanen ,  Dong Li ,  Eric James Shero ,  Yasiel Cabrera ,  Arul Vigneswar Ravichandran ,  Eric Christopher Stevens ,  Paul Ma

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/02

CPC classification number: H01L21/76879 ,  C23C16/0236 ,  C23C16/45553 ,  C23C16/06

Abstract: Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.