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公开(公告)号：US20240377343A1
公开(公告)日：2024-11-14
申请号：US18684558
申请日：2022-08-22
Applicant: ASML NETHERLANDS B.V.
IPC: G01N23/2251 , G06N3/045 , G06N3/0475 , G06N3/094
Abstract: Described herein is a metrology system and a method for converting metrology data via a trained machine learning (ML) model. The method includes accessing a first (MD1) SEM data set (e.g., images, contours, etc.) acquired by a first scanning electron metrology (SEM) system (TS1) and a second (MD2) SEM data set acquired by a second SEM system (TS2), where the first SEM data set and the second SEM data set being associated with a patterned substrate. Using the first SEM data set and the second SEM data set as training data, a machine learning (ML) model is trained (P303) such that the trained ML model is configured to convert (P307) a metrology data set (310) acquired (P305) by the second SEM system to a converted data set (311) having characteristics comparable to metrology data being acquired by the first SEM system. Furthermore, measurements may be determined based on the converted SEM data.
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公开(公告)号：US20230314958A1
公开(公告)日：2023-10-05
申请号：US18207642
申请日：2023-06-08
Applicant: ASML NETHERLANDS B.V
Inventor： Yongfa FAN , Leiwu ZHENG , Mu FEN G , Qian ZHAO , Jen-Shiang WANG
CPC classification number: G03F7/705 , G03F1/80 , G03F7/70625 , H01L22/34
Abstract: A method involving determining an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model including a formula having a variable associated with a spatial property of the pattern or with an etch plasma species concentration of the etch step, and including a mathematical term including a natural exponential function to the power of a parameter that is fitted or based on an etch time of the etch step; and adjusting the patterning process based on the determined etch bias.
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公开(公告)号：US20230298158A1
公开(公告)日：2023-09-21
申请号：US18017646
申请日：2021-07-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Jiao HUANG , Jinze WANG , Hongfei SHI , Mu FENG , Qian ZHAO , Alvin Jianjiang WANG , Yan-Jun XIAO , Liang LIU
CPC classification number: G06T7/001 , G06T7/13 , G06T2207/30168 , G06T2207/30148 , G06T2207/20216 , G06T2207/10061
Abstract: A method for selecting good quality images from raw images of a patterned substrate. The method includes obtaining a plurality of raw images (e.g., SEM images) of a patterned substrate; determining a raw image quality metric (e.g., an image score, an average slope, distance between contours) based on data associated with one or more gauges or one or more contours of one or more features within each image of the plurality of raw images, the raw image quality metric being indicative of a raw image quality; and selecting, based on the raw image quality metric, a sub-set of raw images from the plurality of raw images. The sub-set of raw images can be provided for performing more accurate measurements of the one or more features within an image.
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公开(公告)号：US20220276563A1
公开(公告)日：2022-09-01
申请号：US17625125
申请日：2020-06-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Lei WANG , Yi- Yin CHEN , Mu FENG , Qian ZHAO
Abstract: Systems and methods for reducing prediction uncertainty in a prediction model associated with a patterning process are described. These may be used in calibrating a process model associated with the patterning process, for example. Reducing the uncertainty in the prediction model may include determining a prediction uncertainty parameter based on prediction data. The prediction data may be determined using the prediction model. The prediction model may have been calibrated with calibration data. The prediction uncertainty parameter may be associated with variation in the prediction data. Reducing the uncertainty in the prediction model may include selecting a subset of process data based on the prediction uncertainty parameter; and recalibrating the prediction model using the calibration data and the selected subset of the process data.
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Patent Agency Ranking
公开(公告)号：US20210294218A1
公开(公告)日：2021-09-23
申请号：US16324933
申请日：2017-07-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Yongfa FAN , Mu FENG , Leiwu ZHENG , Qian ZHAO , Jen-Shiang WANG
IPC: G03F7/20
Abstract: A process to model post-exposure effects in patterning processes, the process including: obtaining values based on measurements of structures formed on one or more substrates by a post-exposure process and values of a pair of process parameters by which process conditions were varied; modeling, by a processor system, as a surface, correlation between the values based on measurements of the structures and the values of the pair of process parameters; and storing the model in memory.
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公开(公告)号：US20230161269A1
公开(公告)日：2023-05-25
申请号：US17919189
申请日：2021-05-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Jiao HUANG , Yunan ZHENG , Qian ZHAO , Jiao LIANG , Yongfa FAN , Mu FENG
CPC classification number: G03F7/70633 , G03F7/70625 , G06T7/11 , G06T2207/10061
Abstract: Systems and methods for determining one or more characteristic metrics for a portion of a pattern on a substrate are described. Pattern information for the pattern on the substrate is received. The pattern on the substrate has first and second portions. The first portion of the pattern is blocked, for example with a geometrical block mask, based on the pattern information, such that the second portion of the pattern remains unblocked. The one or more metrics are determined for the unblocked second portion of the pattern. In some embodiments, the first and second portions of the pattern correspond to different exposures in a semiconductor lithography process. The semiconductor lithography process may be a multiple patterning technology process, for example, such as a double patterning process, a triple patterning process, or a spacer double patterning process.
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公开(公告)号：US20190354020A1
公开(公告)日：2019-11-21
申请号：US16484582
申请日：2018-02-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Yongfa FAN , Leiwu ZHENG , Mu FENG , Qian ZHAO , Jen-Shiang WANG
Abstract: A method involving determining an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model including a formula having a variable associated with a spatial property of the pattern or with an etch plasma species concentration of the etch step, and including a mathematical term including a natural exponential function to the power of a parameter that is fitted or based on an etch time of the etch step; and adjusting the patterning process based on the determined etch bias.
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公开(公告)号：US20220113632A1
公开(公告)日：2022-04-14
申请号：US17431226
申请日：2020-02-07
Applicant: ASML NETHERLANDS B.V.
Abstract: A method for gauge selection for use in calibrating a process model associated with a patterning process. The method involves obtaining a set of initial gauges having one or more properties (e.g., gauge name, weight, dose, focus, model error, etc.) associated with the patterning process; and selecting a subset of initial gauges from the set of initial gauges, the selecting the subset of initial gauges including determining a first subset of gauges from the set of initial gauges based on a first property parameter of the one or more properties, the first subset of gauges being configured to calibrate a process model (e.g., optics model, resist mode., etc.).
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公开(公告)号：US20200159124A1
公开(公告)日：2020-05-21
申请号：US16615207
申请日：2018-05-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Te-Sheng WANG , Qian ZHAO
Abstract: A method involving obtaining a simulation of a contour of a pattern to be formed on a substrate using a patterning process, determining a location of an evaluation point on the simulated contour of the pattern, the location spatially associated with a location of a corresponding evaluation point on a design layout for the pattern, and producing electronic information corresponding to a spatial bearing between the location of the evaluation point on the simulated contour and the location of the corresponding evaluation point on the design layout, wherein the information corresponding to the spatial bearing is configured for determining a location of an evaluation point on a measured image of at least part of the pattern, the evaluation point on the measured image spatially associated with the corresponding evaluation point on the design layout.
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