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    ETCHING SYSTEMS, MODELS, AND MANUFACTURING PROCESSES
    3.
    发明申请
    ETCHING SYSTEMS, MODELS, AND MANUFACTURING PROCESSES 有权

    公开(公告)号：US20240385530A1

    公开(公告)日：2024-11-21

    申请号：US18565494

    申请日：2022-05-29

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jiao HUANG ,  Jinze Wang ,  Yan YAN ,  Yongfa FAN ,  Liang Liu ,  Mu FENG

    IPC: G03F7/00

    Abstract: Etch bias is determined based on a curvature of a contour in a substrate pattern. The etch bias is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined and inputted to a simulation model. The simulation model includes a correlation between etch biases and curvatures of contours. The etch bias for the contour in the substrate pattern is outputted by the simulation model based on the curvature.

    DETERMINING METRICS FOR A PORTION OF A PATTERN ON A SUBSTRATE
    5.
    发明公开
    DETERMINING METRICS FOR A PORTION OF A PATTERN ON A SUBSTRATE 审中-公开

    公开(公告)号：US20230161269A1

    公开(公告)日：2023-05-25

    申请号：US17919189

    申请日：2021-05-07

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jiao HUANG ,  Yunan ZHENG ,  Qian ZHAO ,  Jiao LIANG ,  Yongfa FAN ,  Mu FENG

    IPC: G03F7/20 ,  G06T7/11

    CPC classification number: G03F7/70633 ,  G03F7/70625 ,  G06T7/11 ,  G06T2207/10061

    Abstract: Systems and methods for determining one or more characteristic metrics for a portion of a pattern on a substrate are described. Pattern information for the pattern on the substrate is received. The pattern on the substrate has first and second portions. The first portion of the pattern is blocked, for example with a geometrical block mask, based on the pattern information, such that the second portion of the pattern remains unblocked. The one or more metrics are determined for the unblocked second portion of the pattern. In some embodiments, the first and second portions of the pattern correspond to different exposures in a semiconductor lithography process. The semiconductor lithography process may be a multiple patterning technology process, for example, such as a double patterning process, a triple patterning process, or a spacer double patterning process.

    ETCH BIAS CHARACTERIZATION AND METHOD OF USING THE SAME
    6.
    发明申请
    ETCH BIAS CHARACTERIZATION AND METHOD OF USING THE SAME 审中-公开

    公开(公告)号：US20190354020A1

    公开(公告)日：2019-11-21

    申请号：US16484582

    申请日：2018-02-21

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Yongfa FAN ,  Leiwu ZHENG ,  Mu FENG ,  Qian ZHAO ,  Jen-Shiang WANG

    IPC: G03F7/20 ,  H01L21/66 ,  G03F1/80

    Abstract: A method involving determining an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model including a formula having a variable associated with a spatial property of the pattern or with an etch plasma species concentration of the etch step, and including a mathematical term including a natural exponential function to the power of a parameter that is fitted or based on an etch time of the etch step; and adjusting the patterning process based on the determined etch bias.

    GENERATING AUGMENTED DATA TO TRAIN MACHINE LEARNING MODELS TO PRESERVE PHYSICAL TRENDS
    7.
    发明申请
    GENERATING AUGMENTED DATA TO TRAIN MACHINE LEARNING MODELS TO PRESERVE PHYSICAL TRENDS 有权

    公开(公告)号：US20240420025A1

    公开(公告)日：2024-12-19

    申请号：US18703486

    申请日：2022-11-12

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jiaxing REN ,  Yongfa FAN ,  Yi-Yin CHEN ,  Chenji ZHANG ,  Leiwu ZHENG

    IPC: G06N20/00 ,  G03F7/00

    Abstract: Machine learning models can be trained to predict imaging characteristics with respect to variation in a pattern on a wafer resulting from a patterning process. However, due to low pattern coverage provided by limited wafer data used for training, machine learning models tend to overfit, and predictions from the machine learning models deviate from physical trends that characterize the pattern on the wafer and/or the patterning process with respect to the pattern variation. To enhance pattern coverage, training data is augmented with pattern data that conforms to a certain expected physical trend, and applies to new patterns not covered by previously measured wafer data.

    METHOD FOR DETERMINING PATTERN IN A PATTERNING PROCESS
    8.
    发明申请
    METHOD FOR DETERMINING PATTERN IN A PATTERNING PROCESS 有权

    公开(公告)号：US20220179321A1

    公开(公告)日：2022-06-09

    申请号：US17442662

    申请日：2020-03-05

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Ziyang MA ,  Jin CHENG ,  Ya LUO ,  Leiwu ZHENG ,  Xin GUO ,  Jen-Shiang WANG ,  Yongfa FAN ,  Feng CHEN ,  Yi-Yin CHEN ,  Chenji ZHANG ,  Yen- Wen LU

    IPC: G03F7/20 ,  G06N3/08 ,  G06T7/00

    Abstract: A method for training a patterning process model, the patterning process model configured to predict a pattern that will be formed by a patterning process. The method involves obtaining an image data associated with a desired pattern, a measured pattern of the substrate, a first model including a first set of parameters, and a machine learning model including a second set of parameters; and iteratively determining values of the first set of parameters and the second set of parameters to train the patterning process model. An iteration involves executing, using the image data, the first model and the machine learning model to cooperatively predict a printed pattern of the substrate; and modifying the values of the first set of parameters and the second set of parameters such that a difference between the measured pattern and the predicted pattern is reduced.

    MODELING POST-EXPOSURE PROCESSES
    9.
    发明申请
    MODELING POST-EXPOSURE PROCESSES 有权

    公开(公告)号：US20210294218A1

    公开(公告)日：2021-09-23

    申请号：US16324933

    申请日：2017-07-27

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Yongfa FAN ,  Mu FENG ,  Leiwu ZHENG ,  Qian ZHAO ,  Jen-Shiang WANG

    IPC: G03F7/20

    Abstract: A process to model post-exposure effects in patterning processes, the process including: obtaining values based on measurements of structures formed on one or more substrates by a post-exposure process and values of a pair of process parameters by which process conditions were varied; modeling, by a processor system, as a surface, correlation between the values based on measurements of the structures and the values of the pair of process parameters; and storing the model in memory.

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