公开(公告)号：US20200150547A1

公开(公告)日：2020-05-14

申请号：US16744269

申请日：2020-01-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Ralph Timotheus HUIJGEN ,  Marc Jurian Kea ,  Marcel Theodorus Maria Van Kessel ,  Masashi Ishibashi ,  Chi-Hsiang Fan ,  Hakki Ergün Cekli ,  Youping Zhang ,  Maurits Van Der Schaar ,  Liping Ren

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/956

Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.

公开(公告)号：US10578980B2

公开(公告)日：2020-03-03

申请号：US16465161

申请日：2017-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Ralph Timotheus Huijgen ,  Marc Jurian Kea ,  Marcel Theodorus Maria Van Kessel ,  Masashi Ishibashi ,  Chi-Hsiang Fan ,  Hakki Ergün Cekli ,  Youping Zhang ,  Maurits Van Der Schaar ,  Liping Ren

IPC: G03B27/32 ,  G03F7/20 ,  G01N21/956 ,  G03F9/00

Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.

公开(公告)号：US11774862B2

公开(公告)日：2023-10-03

申请号：US17501911

申请日：2021-10-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergün Cekli ,  Masashi Ishibashi ,  Wendy Johanna Martina Van De Ven ,  Willem Seine Christian Roelofs ,  Elliott Gerard McNamara ,  Rizvi Rahman ,  Michiel Kupers ,  Emil Peter Schmitt-Weaver ,  Erik Henri Adriaan Delvigne

IPC: G03F7/20 ,  G03F7/00 ,  G01N21/956 ,  G03F9/00 ,  H01L21/66

CPC classification number: G03F7/70633 ,  G01N21/956 ,  G03F9/7046 ,  H01L22/12 ,  H01L22/20

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

公开(公告)号：US11175591B2

公开(公告)日：2021-11-16

申请号：US16098165

申请日：2017-04-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergün Cekli ,  Masashi Ishibashi ,  Wendy Johanna Martina Van De Ven ,  Willem Seine Christian Roelofs ,  Elliott Gerard McNamara ,  Rizvi Rahman ,  Michiel Kupers ,  Emil Peter Schmitt-Weaver ,  Erik Henri Adriaan Delvigne

IPC: G03F7/20 ,  G01N21/956 ,  G03F9/00 ,  H01L21/66

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

公开(公告)号：US10545410B2

公开(公告)日：2020-01-28

申请号：US16076743

申请日：2017-02-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergun Cekli ,  Masashi Ishibashi ,  Leon Paul Van Dijk ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Reiner Maria Jungblut ,  Cedric Marc Affentauschegg ,  Ronald Henricus Johannes Otten

IPC: G03B27/42 ,  G03F7/20 ,  G03F9/00

Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.