公开(公告)号：US12078935B2

公开(公告)日：2024-09-03

申请号：US17941378

申请日：2022-09-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Rizvi Rahman ,  Hakki Ergün Cekli ,  Cédric Désiré Grouwstra

IPC: G03F7/00 ,  G05B19/418 ,  H01L21/66

CPC classification number: G03F7/70191 ,  G05B19/41875 ,  H01L22/20 ,  G05B2219/45028

Abstract: A device manufacturing method, the method comprising: obtaining a measurement data time series of a plurality of substrates on which an exposure step and a process step have been performed; obtaining a status data time series relating to conditions prevailing when the process step was performed on at least some of the plurality of substrates; applying a filter to the measurement data time series and the status data time series to obtain filtered data; and determining, using the filtered data, a correction to be applied in an exposure step performed on a subsequent substrate.

公开(公告)号：US12085913B2

公开(公告)日：2024-09-10

申请号：US17601307

申请日：2020-03-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc Hauptmann ,  Amir Bin Ismail ,  Rizvi Rahman ,  Jiapeng Li

IPC: G05B19/404 ,  G03F7/00 ,  G03F7/20

CPC classification number: G05B19/404 ,  G03F7/70516 ,  G05B2219/45031 ,  G05B2219/50296

Abstract: A method for generating a sampling scheme for a device manufacturing process, the method including: obtaining a measurement data time series of a plurality of processed substrates; transforming the measurement data time series to obtain frequency domain data; determining, using the frequency domain data, a temporal sampling scheme; determining an error offset introduced by the temporal sampling scheme on the basis of measurements on substrates performed according to the temporal sampling scheme; and determining an improved temporal sampling scheme to compensate the error offset.

公开(公告)号：US12276919B2

公开(公告)日：2025-04-15

申请号：US17635290

申请日：2020-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc Hauptmann ,  Cornelis Johannes Henricus Lambregts ,  Amir Bin Ismail ,  Rizvi Rahman ,  Allwyn Boustheen ,  Raheleh Pishkari ,  Everhardus Cornelis Mos ,  Ekaterina Mikhailovna Viatkina ,  Roy Werkman ,  Ralph Brinkhof

IPC: G03F7/00

Abstract: A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.

公开(公告)号：US11442366B2

公开(公告)日：2022-09-13

申请号：US16620899

申请日：2018-05-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Rizvi Rahman ,  Hakki Ergün Cekli ,  Cëdric Dësirë Grouwstra

IPC: G05B19/418 ,  H01L21/66 ,  G03F7/20

Abstract: A device manufacturing method, the method including: obtaining a measurement data time series of a plurality of substrates on which an exposure step and a process step have been performed; obtaining a status data time series relating to conditions prevailing when the process step was performed on at least some of the plurality of substrates; applying a filter to the measurement data time series and the status data time series to obtain filtered data; and determining, using the filtered data, a correction to be applied in an exposure step performed on a subsequent substrate.

公开(公告)号：US11774862B2

公开(公告)日：2023-10-03

申请号：US17501911

申请日：2021-10-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergün Cekli ,  Masashi Ishibashi ,  Wendy Johanna Martina Van De Ven ,  Willem Seine Christian Roelofs ,  Elliott Gerard McNamara ,  Rizvi Rahman ,  Michiel Kupers ,  Emil Peter Schmitt-Weaver ,  Erik Henri Adriaan Delvigne

IPC: G03F7/20 ,  G03F7/00 ,  G01N21/956 ,  G03F9/00 ,  H01L21/66

CPC classification number: G03F7/70633 ,  G01N21/956 ,  G03F9/7046 ,  H01L22/12 ,  H01L22/20

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

公开(公告)号：US11709434B2

公开(公告)日：2023-07-25

申请号：US17633781

申请日：2020-07-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Rizvi Rahman ,  Cornelis Johannes Henricus Lambregts ,  Wolfgang Helmut Henke

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/70641

Abstract: A device manufacturing method including: performing a first exposure on a substrate using a first lithographic apparatus to form a first patterned layer including first features; processing the substrate to transfer the first features into the substrate; and performing a second exposure on the substrate using a second lithographic apparatus to form a second patterned layer including second features, wherein: the first lithographic apparatus has first and second control inputs effective to control first and second parameters of the first features at least partly independently; the second lithographic apparatus has a third control input effective to control the first and second parameters of the second features together; and the first exposure is performed with the first and/or second control input set to pre-bias the first and/or second parameter.

公开(公告)号：US11175591B2

公开(公告)日：2021-11-16

申请号：US16098165

申请日：2017-04-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergün Cekli ,  Masashi Ishibashi ,  Wendy Johanna Martina Van De Ven ,  Willem Seine Christian Roelofs ,  Elliott Gerard McNamara ,  Rizvi Rahman ,  Michiel Kupers ,  Emil Peter Schmitt-Weaver ,  Erik Henri Adriaan Delvigne

IPC: G03F7/20 ,  G01N21/956 ,  G03F9/00 ,  H01L21/66

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.