公开(公告)号：US20230176490A1

公开(公告)日：2023-06-08

申请号：US17922925

申请日：2021-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Sarathi ROY ,  Wolfgang Helmut HENKE ,  Peter TEN BERGE

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/7065 ,  G03F9/7003

Abstract: A method and associated apparatuses for optimizing a sampling scheme which defines sampling locations on a bonded substrate, having undergone a wafer to wafer bonding process. The method includes determining a sampling scheme for a metrology process and optimizing the sampling scheme with respect to a singularity defined by a large overlay error and/or grid deformation at a central location on the bonded substrate to obtain a modified sampling scheme.

公开(公告)号：US20220276570A1

公开(公告)日：2022-09-01

申请号：US17633781

申请日：2020-07-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Rizvi RAHMAN ,  Cornelis Johannes Henricus LAMBREGTS ,  Wolfgang Helmut HENKE

IPC: G03F7/20

Abstract: A device manufacturing method including: performing a first exposure on a substrate using a first lithographic apparatus to form a first patterned layer including first features; processing the substrate to transfer the first features into the substrate; and performing a second exposure on the substrate using a second lithographic apparatus to form a second patterned layer including second features, wherein: the first lithographic apparatus has first and second control inputs effective to control first and second parameters of the first features at least partly independently; the second lithographic apparatus has a third control input effective to control the first and second parameters of the second features together; and the first exposure is performed with the first and/or second control input set to pre-bias the first and/or second parameter.

公开(公告)号：US20190384188A1

公开(公告)日：2019-12-19

申请号：US16479959

申请日：2017-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Rene Marinus Gerardus Johan QUEENS ,  Wolfgang Helmut HENKE ,  Arend Johannes DONKERBROEK ,  Jeroen COTTAAR

IPC: G03F9/00

Abstract: A method of controlling a lithographic apparatus to manufacture a plurality of devices, the method including: obtaining a parameter map representing a parameter variation across a substrate by measuring the parameter at a plurality of points on the substrate; decomposing the parameter map into a plurality of components, including a first parameter map component representing parameter variations associated with the device pattern and one or more further parameter map components representing other parameter variations; deriving a scale factor, configured to correct for errors in measurement of the parameter variation, from measurements of a second parameter of a substrate; and controlling the lithographic apparatus using the parameter map and scale factor to apply a device pattern at multiple locations across the substrate.

公开(公告)号：US20190072857A1

公开(公告)日：2019-03-07

申请号：US16084586

申请日：2017-05-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Michiel KUPERS ,  Wolfgang Helmut HENKE

IPC: G03F7/20

Abstract: A lithographic apparatus applies patterns to substrates, the substrates being processed as a plurality of lots. Each lot of substrates receives a particular layer pattern under layer-specific operating conditions. A thermal model is provided for modeling and compensating one or more characteristics of thermal behavior of components within the lithographic apparatus, in response to the varying layer-specific operating conditions associated with a sequence of lots. The thermal model is also used to simulate thermal behavior of the apparatus when processing a given collection of lots in different possible sequences. Based on comparison of the simulated thermal behavior in different sequences of lots, an optimized sequence is determined. Optionally, lot sequencing rules are determined and used to obtain a preferred thermal behavior when processing a collection of lots in the future.

公开(公告)号：US20180307135A1

公开(公告)日：2018-10-25

申请号：US15769338

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter TEN BERGE ,  Everhardus Cornelis MOS ,  Richard Johannes Franciscus VAN HAREN ,  Peter Hanzen WARDENIER ,  Erik JENSEN ,  Bernardo KASTRUP ,  Michael KUBIS ,  Johannes Catharinus Hubertus MULKENS ,  Davis Frans Simon DECKERS ,  Wolfgang Helmut HENKE ,  Joungchel LEE

IPC: G03F1/72 ,  G03F7/20

CPC classification number: G03F1/72 ,  G03B27/68 ,  G03F7/70425 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.