公开(公告)号：US09798225B2

公开(公告)日：2017-10-24

申请号：US15034105

申请日：2014-10-14

Applicant: ASML Netherlands B.V.

Inventor： Eelco Van Setten ,  Natalia Viktorovna Davydova ,  Eleni Psara ,  Anton Bernhard Van Oosten

IPC: G03F1/22 ,  G03F1/24 ,  G03F1/38 ,  G03F1/44 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/22 ,  G03F1/38 ,  G03F1/44 ,  G03F1/68 ,  G03F1/70 ,  G03F7/2004 ,  G03F7/70433 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by angle, exposed again, rotated by a further angle, exposed, etc. The printed features are measured to determine one or more characteristics of the mask. The method can be used to model shadowing effects of a EUV mask with a thick absorber illuminated at an angle.