公开(公告)号：US09798225B2

公开(公告)日：2017-10-24

申请号：US15034105

申请日：2014-10-14

Applicant: ASML Netherlands B.V.

Inventor： Eelco Van Setten ,  Natalia Viktorovna Davydova ,  Eleni Psara ,  Anton Bernhard Van Oosten

IPC: G03F1/22 ,  G03F1/24 ,  G03F1/38 ,  G03F1/44 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/22 ,  G03F1/38 ,  G03F1/44 ,  G03F1/68 ,  G03F1/70 ,  G03F7/2004 ,  G03F7/70433 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by angle, exposed again, rotated by a further angle, exposed, etc. The printed features are measured to determine one or more characteristics of the mask. The method can be used to model shadowing effects of a EUV mask with a thick absorber illuminated at an angle.

公开(公告)号：US09519224B2

公开(公告)日：2016-12-13

申请号：US14351012

申请日：2012-09-21

Applicant: ASML Netherlands B.V.

Inventor： Arjan Gijsbertsen ,  Hubertus Antonius Geraets ,  Bart Peter Bert Segers ,  Natalia Viktorovna Davydova

IPC: G03F7/20 ,  G03F9/00 ,  G01T1/02

CPC classification number: G03F7/702 ,  G01T1/02 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F9/7026 ,  G03F9/7084

Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero.

Abstract translation: 一种光刻设备，包括被构造成支撑图案形成装置的支撑结构，所述图案形成装置能够在其横截面中赋予具有光栅的EUV辐射束以形成图案化的EUV辐射束，以及投影系统， EUV辐射束到基板的目标部分上，其中支撑结构设置有包括与一系列第二反射部分交替的一系列第一反射部分的光栅，第二反射部分的反射率小于反射率 的至少部分的第一反射部分并且大于零。