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公开(公告)号:US10361059B2
公开(公告)日:2019-07-23
申请号:US15097996
申请日:2016-04-13
Applicant: Advanced Ion Beam Technology, Inc.
Inventor: Xiao Bai , Zhimin Wan , Donald Wayne Berrian
IPC: H01J37/147 , H01J37/317 , C23C14/48
Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.
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公开(公告)号:US09057129B2
公开(公告)日:2015-06-16
申请号:US14183320
申请日:2014-02-18
Applicant: Advanced Ion Beam Technology., Inc.
Inventor: Zhimin Wan , John D. Pollock , Donald Wayne Berrian , Causon Ko-Chuan Jen
IPC: C23C14/48 , H01J37/09 , H01J37/317
CPC classification number: C23C14/48 , H01J37/09 , H01J37/3171 , H01J2237/0455 , H01J2237/24542 , H01J2237/31711
Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.
Abstract translation: 在通过成形离子束注入衬底之前,使用孔装置内的可变孔径来形成离子束,特别是最终在离开衬底前方的位置形成离子束。 因此,可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分,而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说,可以通过定制的离子束分别实现不同的注入,而不需要高成本(使用多个固定孔径器件)和复杂的操作(每次重新调整离子束)。 此外,可以加速用于获取要注入的特定离子束的光束调整过程,以便每次都比使用多个固定孔径和/或重新调整离子束更快,因为可以实现可变孔径的调节 简单地通过机械操作。
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公开(公告)号:US09340870B2
公开(公告)日:2016-05-17
申请号:US13769189
申请日:2013-02-15
Applicant: Advanced Ion Beam Technology, Inc.
Inventor: Xiao Bai , Zhimin Wan , Donald Wayne Berrian
IPC: C23C14/00 , C23C14/48 , H01J37/147 , H01J37/317
CPC classification number: H01J37/1475 , C23C14/48 , H01J37/3171 , H01J2237/152 , H01J2237/1526 , H01J2237/303 , H01J2237/31701 , H01J2237/31703
Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.
Abstract translation: 用于在工件上注入离子的离子束的时间平均离子束轮廓可以被平滑以减少噪声,峰值,峰值等并且改善剂量均匀性。 诸如电磁体的辅助磁场装置可以沿着离子束路径设置,并且可以由周期性信号驱动以产生波动的磁场来平滑离子束轮廓(即,束电流密度分布)。 辅助磁场装置可以位于离子束的宽度和高度之外,并且可以产生在离子束的中心附近可能最强的不均匀的波动磁场,其中可以定位最高浓度的离子。 波动的磁场可能导致光束轮廓形状连续变化,从而使噪声随时间平均化。
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