公开(公告)号：US20150371857A1

公开(公告)日：2015-12-24

申请号：US14312617

申请日：2014-06-23

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin WAN ,  Rekha PADMANABHAN ,  Xiao BAI ,  Gary N. CAI ,  Ching-I LI ,  Ger-Pin LIN ,  Shao-Yu HU ,  David HOGLUND ,  Robert E. KAIM ,  Kourosh SAADATMAND

IPC: H01L21/265

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/0835 ,  H01J2237/303 ,  H01J2237/30477

Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

Abstract translation: 在用于工件的较低剂量率离子注入的示例性过程中，可以使用离子源和提取操纵器来产生离子束。 提取操纵器可以位于离离子源的出口孔的间隙距离处。 当提取操纵器定位在与出射孔的最佳间隙距离处时，离开提取操纵器的离子束的电流可以最大化。 提取操纵器从出口孔定位的间隙距离可以不同于最佳间隙距离至少10％。 可以将第一电位施加到第一组电极。 当离子束通过第一组电极时，离子束的x维度可能增加。 工件可以位于离子束中以将离子注入到工件中。

公开(公告)号：US20160225577A1

公开(公告)日：2016-08-04

申请号：US15097996

申请日：2016-04-13

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Xiao BAI ,  Zhimin WAN ,  Donald Wayne BERRIAN

IPC: H01J37/147 ,  H01J37/317

CPC classification number: H01J37/1475 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/152 ,  H01J2237/1526 ,  H01J2237/303 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract translation: 用于在工件上注入离子的离子束的时间平均离子束轮廓可以被平滑以减少噪声，峰值，峰值等并且改善剂量均匀性。 诸如电磁体的辅助磁场装置可以沿着离子束路径设置，并且可以由周期性信号驱动以产生波动的磁场来平滑离子束轮廓（即，束电流密度分布）。 辅助磁场装置可以位于离子束的宽度和高度之外，并且可以产生在离子束的中心附近可能最强的不均匀的波动磁场，其中可以定位最高浓度的离子。 波动的磁场可能导致光束轮廓形状连续变化，从而使噪声随时间平均化。

公开(公告)号：US20140212595A1

公开(公告)日：2014-07-31

申请号：US13769189

申请日：2013-02-15

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Xiao BAI ,  Zhimin WAN ,  Donald Wayne BERRIAN

IPC: H01J29/46 ,  C23C14/48

CPC classification number: H01J37/1475 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/152 ,  H01J2237/1526 ,  H01J2237/303 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract translation: 用于在工件上注入离子的离子束的时间平均离子束轮廓可以被平滑以减少噪声，峰值，峰值等并且改善剂量均匀性。 诸如电磁体的辅助磁场装置可以沿着离子束路径设置，并且可以由周期性信号驱动以产生波动的磁场来平滑离子束轮廓（即，束电流密度分布）。 辅助磁场装置可以位于离子束的宽度和高度之外，并且可以产生在离子束的中心附近可能最强的不均匀的波动磁场，其中可以定位最高浓度的离子。 波动的磁场可能导致光束轮廓形状连续变化，从而使噪声随时间平均化。