公开(公告)号：US09431247B2

公开(公告)日：2016-08-30

申请号：US14752522

申请日：2015-06-26

申请人： ADVANCED ION BEAM TECHNOLOGY, INC.

发明人： Zhimin Wan ,  Kourosh Saadatmand ,  Wilhelm P. Platow ,  Ger-Pin Lin ,  Ching-I Li ,  Rekha Padmanabhan ,  Gary N. Cai

IPC分类号： H01L21/265 ,  H01J37/302

CPC分类号： H01L21/26586 ,  H01J37/3026 ,  H01J37/3171 ,  H01J2237/0835 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31706

摘要： A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.

摘要翻译： 提供了一种用于离子注入的方法。 首先，提供非平行离子束。 此后，工件和非平行离子束之间的相对运动，以使得工件的每个区域能够被不平行离子束的不同部分连续地注入。 特别地，当至少一个三维结构位于工件的上表面上时，当工件移动时，可以通过非平行离子束适当地注入三维结构的顶表面和侧表面 跨越非平行离子束一次，仅一次。 这里，非平行离子束可以是发散离子束或会聚离子束（两者均可视为积分发散光束），也可以直接从离子源产生或者从平行离子束修饰， 发散离子束或会聚离子束。

公开(公告)号：US08653490B2

公开(公告)日：2014-02-18

申请号：US13588735

申请日：2012-08-17

申请人： Masao Naito

发明人： Masao Naito

IPC分类号： G21K5/04

CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/0835 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703

摘要： The ion implanter includes a deflecting electrode and a shield member. The ion beam has a ribbon shape. The deflecting electrode deflects at least a part of the ion beam in a long side direction toward a short side direction of the ion beam, based on a result measured of a beam current density distribution in the long side direction. The shield member partially shields the ion beam deflected by the deflecting electrode. The deflecting electrode includes a plate electrode and an electrode group including plural electrodes. The electrode group is disposed to face the plate electrode to interpose the ion beam between the plate electrode and the electrode group. The plate electrode is electrically grounded, and the plurality of electrodes are electrically independent from each other. Each of the plurality of electrodes is connected to an independent power source from other power sources to perform a potential setting.

摘要翻译： 离子注入机包括偏转电极和屏蔽部件。 离子束具有带状。 基于从长边方向的束流密度分布测定的结果，偏转电极使离子束的至少一部分在长边方向朝向离子束的短边方向偏转。 屏蔽构件部分地遮蔽由偏转电极偏转的离子束。 偏转电极包括平板电极和包括多个电极的电极组。 电极组设置成与板电极相对，以将离子束插入平板电极和电极组之间。 板电极电接地，并且多个电极彼此电独立。 多个电极中的每一个连接到来自其他电源的独立电源以执行电位设置。

公开(公告)号：US08154210B2

公开(公告)日：2012-04-10

申请号：US12642161

申请日：2009-12-18

申请人： Thomas Neil Horsky ,  John Noel Williams

发明人： Thomas Neil Horsky ,  John Noel Williams

IPC分类号： H01J7/24

CPC分类号： H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

摘要： An ion source is disclosed incorporating various aspects of the invention including i) a vaporizer, ii) a vaporizer valve, iii) a gas feed, iv) an ionization chamber, v) an electron gun, vi) a cooled mounting frame, and vii) an ion exit aperture. The ion source includes means for introducing gaseous feed material into the ionization chamber, means for vaporizing solid feed materials and introducing their vapors into the ionization chamber, means for ionizing the introduced gaseous feed materials within the ionization chamber, and means for extracting the ions thus produced from an ion exit aperture adjacent to the ionization region. In addition, means for accelerating and focusing the exiting ions are provided. The vaporizer, vaporizer valve, gas feed, ionization chamber, electron gun, cooled mounting frame, and ion exit aperture are all integrated into a single assembly in preferred embodiments of the novel ion source.

摘要翻译： 公开了一种结合本发明的各个方面的离子源，包括：i）蒸发器，ii）蒸发器阀，iii）气体进料，iv）电离室，v）电子枪，vi）冷却的安装框架，vii ）离子出口孔。 离子源包括用于将气态原料引入电离室的装置，用于蒸发固体进料并将其蒸气引入电离室的装置，用于离子化电离室内引入的气体进料的装置，以及用于从离子化室 由邻近电离区的离子出口孔产生。 此外，提供了用于加速和聚焦离子的装置。 蒸发器，蒸发器阀，气体进料，电离室，电子枪，冷却的安装框架和离子出口孔都在新型离子源的优选实施例中集成到单个组件中。

公开(公告)号：US07800312B2

公开(公告)日：2010-09-21

申请号：US11527994

申请日：2006-09-26

申请人： Thomas Neil Horsky

发明人： Thomas Neil Horsky

IPC分类号： H05B31/26

CPC分类号： H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

摘要： A direct electron impact ion source is disclosed that includes a vaporizer for producing a process gas; an electron source for generating an electron beam; and an ionization chamber. The electron source is located outside the ionization chamber. Aligned apertures are provided in opposing walls of the ionization chamber to allow an electron beam to pass through the ionization chamber. The process gas is directed into the ionization chamber and ionized and extracted from the ionization chamber by way of an extraction aperture. In one embodiment, the direct electron impact ion source is configured with a form factor to enable it to be retrofit into the volume of an existing ion source , for example, an arc discharge type ion source. Alternatively, the direct electron impact ion source may be used together with an arc discharge ion source to create a dual mode or universal ion source.

摘要翻译： 公开了一种直接电子冲击离子源，其包括用于生产工艺气体的蒸发器; 用于产生电子束的电子源; 和电离室。 电子源位于电离室外。 在电离室的相对的壁中设置对准的孔，以允许电子束通过电离室。 工艺气体被引导到电离室中，并通过提取孔离子化并从电离室中提取。 在一个实施例中，直接电子冲击离子源被配置成具有形状因子以使其能够被改造成现有离子源的体积，例如电弧放电型离子源。 或者，直接电子冲击离子源可以与电弧放电离子源一起使用以产生双模式或通用离子源。

公开(公告)号：US07567026B2

公开(公告)日：2009-07-28

申请号：US11309597

申请日：2006-08-29

申请人： Ga-Lane Chen

发明人： Ga-Lane Chen

IPC分类号： H05H5/03

CPC分类号： H01J27/08 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0455 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/30477 ,  H01J2237/3151

摘要： An ion source and a polishing system using the ion source are disclosed. The ion source includes a discharge chamber, an electron emitter, a cathode, a screen grid, an accelerator grid, and a screen electrode. The discharge chamber is configured for accommodating discharge gas. The electron emitter is disposed in the discharge chamber. The cathode, the screen grid, the accelerator grid, and the accelerator grid are separately aligned in the discharge chamber in an ascending order with respect to the respective distance thereof from the electron emitter. The electron emitter, the cathode, the screen grid, the accelerator grid, and the accelerator grid are powered in order of descending voltages. The screen electrode defines an adjustable orifice to permit adjustment of an ion-beam ejecting area associated with the orifice. The polishing system further employs a movable stage and control and monitor components, in addition to the ion source.

摘要翻译： 公开了一种使用离子源的离子源和抛光系统。 离子源包括放电室，电子发射器，阴极，筛网，加速器栅格和屏幕电极。 排出室构造成容纳放电气体。 电子发射器设置在放电室中。 阴极，筛网，加速器网格和加速器网格相对于其从电子发射器的相应距离以升序分开排列在放电室中。 电子发射器，阴极，筛网，加速器网格和加速器网格按照下降电压的顺序供电。 屏幕电极限定可调节的孔口，以允许调整与孔口相关联的离子束喷射区域。 除了离子源之外，抛光系统还采用可移动台和控制和监视部件。

公开(公告)号：US07107929B2

公开(公告)日：2006-09-19

申请号：US10170512

申请日：2002-06-12

申请人： Thomas Neil Horsky ,  John Noel Williams

发明人： Thomas Neil Horsky ,  John Noel Williams

IPC分类号： A01C7/00 ,  H01J7/24

CPC分类号： H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

摘要： An ion source for an ion implantation system includes a vaporizer for producing a process gas; an electron source for generating an electron beam to ionize the process gas within a ionization chamber. The ionization chamber includes an extraction aperture for extracting an ion beam. The ion source, in accordance with the preset invention, is configured to be able to be retrofit into the design space of existing ion sources in, for example, Bernas source-based ion implanters.

摘要翻译： 用于离子注入系统的离子源包括用于产生处理气体的蒸发器; 用于产生电离束以电离离子化室内的工艺气体的电子源。 电离室包括用于提取离子束的提取孔。 根据本发明的离子源被配置为能够改造为例如基于伯纳斯源的离子注入器中的现有离子源的设计空间。

公开(公告)号：US5498874A

公开(公告)日：1996-03-12

申请号：US362942

申请日：1994-12-23

申请人： Motosuke Miyoshi ,  Katsuya Okumura

发明人： Motosuke Miyoshi ,  Katsuya Okumura

IPC分类号： G01N23/225 ,  G01R31/302 ,  G21K5/04 ,  H01J37/04 ,  H01L21/66

CPC分类号： H01J37/04 ,  H01J2237/0835 ,  H01J2237/2817

摘要： The fault detecting apparatus comprises an electro optical lens-barrel having a rectangular cathode (101), three four-pole lenses (117, 119, 121), and a deflector (129). The four-pole lenses are controlled to form such a rectangular beam that a ratio of a reduction ratio at the sample surface of an electron beam locus along a longitudinal direction of the rectangular cathode to a reduction ratio at the sample surface of an electron beam locus along a lateral direction of the rectangular cathode becomes equal to a ratio of a length to a width of the rectangular cathode and in addition a width of the beam is equal to a required minimum fault detection width. Further, the deflector (129) is controlled by a deflection controller (130) in such a way that the rectangular beam can be scanned (raster scanning) by moving the rectangular beam at every scanning stroke corresponding to the minimum fault detection width in both the longitudinal and lateral directions of the rectangular beam.

摘要翻译： 故障检测装置包括具有矩形阴极（101），三个四极透镜（117,119,121）和偏转器（129）的电光镜镜筒。 控制四极透镜以形成这样的矩形光束，使得沿着矩形阴极的纵向方向的电子束轨迹的样品表面处的减小率与电子束轨迹的样品表面处的压下率的比率 沿着矩形阴极的横向方向变得等于矩形阴极的长度与宽度的比率，此外，光束的宽度等于所需的最小故障检测宽度。 此外，偏转器（129）由偏转控制器（130）控制，使得可以通过在对应于最小故障检测宽度的每个扫描行程中移动矩形束来扫描矩形束（光栅扫描） 矩形梁的纵向和横向方向。

公开(公告)号：US20160189914A1

公开(公告)日：2016-06-30

申请号：US14895708

申请日：2014-10-17

申请人： HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

发明人： Jiang HUANG ,  Mingwu FAN ,  Tiaoqin YU ,  Lige ZHANG ,  Chen ZUO ,  Jun YANG ,  Yongqian XIONG ,  Kaifeng LIU ,  Gerald F. WU ,  Lei CAO

IPC分类号： H01J37/143

CPC分类号： H01J37/143 ,  G21K1/093 ,  G21K5/04 ,  H01J3/12 ,  H01J33/00 ,  H01J37/3178 ,  H01J2237/0835 ,  H01J2237/1405 ,  H01J2237/152

摘要： Provided is a device for optimizing a diffusion section of an electron beam, comprising two groups of permanent magnets, a magnetic field formed by the four magnetic poles extending the electron beam in a longitudinal direction, and compressing the electron beam in a transverse direction, so that the electron beam becomes an approximate ellipse; another magnetic field formed by the eight magnetic poles optimizing an edge of a dispersed electron-beam bunch into an approximate rectangle; by controlling the four longitudinal connection mechanisms so that the upper magnetic yoke and the lower magnetic yoke of the first group of permanent magnets move synchronously towards the center thereof thereby longitudinally compressing the electron beam in the shape of an approximate ellipse, and the upper magnetic yoke and the lower magnetic yoke of the second group of permanent magnets move synchronously towards the center thereof thereby longitudinally compressing the electron beam in the shape of an approximate rectangle, and the process of longitudinal compression is repeated until a longitudinal size of the electron-beam bunch is reduced to 80 mm. The invention is capable of reasonably compressing a longitudinal size of an electron-beam bunch after diffusion to approximately 80 mm, which ensures optimum irradiation uniformity and efficiency, and enables the longitudinal size to be within the range of a conventional titanium window,

摘要翻译： 本发明提供一种用于优化电子束的扩散部分的装置，包括两组永久磁体，由四个磁极形成的磁场，该四个磁极沿纵向方向延伸电子束，并且沿横向压缩电子束，因此 电子束变成近似椭圆; 由八个磁极形成的另一个磁场将分散的电子束束的边缘优化成近似矩形; 通过控制四个纵向连接机构，使得第一组永磁体的上磁轭和下磁轭同步向其中心移动，从而纵向压缩近似椭圆形的电子束，并且上磁轭 并且第二组永磁体的下磁轭朝向其中心同步移动，从而纵向压缩大致矩形的电子束，并且重复纵向压缩的过程，直到电子束束的纵向尺寸 减至80毫米。 本发明能够将扩散后的电子束束的纵向尺寸合理地压缩至大约80mm，这确保了最佳的照射均匀性和效率，并且使纵向尺寸在常规的钛合金窗口的范围内，

公开(公告)号：US20160133469A1

公开(公告)日：2016-05-12

申请号：US14752522

申请日：2015-06-26

申请人： ADVANCED ION BEAM TECHNOLOGY, INC.

发明人： Zhimin WAN ,  Kourosh SAADATMAND ,  Wilhelm P. PLATOW ,  Ger-Pin LIN ,  Ching-I LI ,  Rekha PADMANABHA ,  Gary N. CAI

IPC分类号： H01L21/265

CPC分类号： H01L21/26586 ,  H01J37/3026 ,  H01J37/3171 ,  H01J2237/0835 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31706

摘要： A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.

摘要翻译： 提供了一种用于离子注入的方法。 首先，提供非平行离子束。 此后，工件和非平行离子束之间的相对运动，以使得工件的每个区域能够被不平行离子束的不同部分连续地注入。 特别地，当至少一个三维结构位于工件的上表面上时，当工件移动时，可以通过非平行离子束适当地注入三维结构的顶表面和侧表面 跨越非平行离子束一次，仅一次。 这里，非平行离子束可以是发散离子束或会聚离子束（两者均可视为积分发散光束），也可以直接从离子源产生或者从平行离子束修饰， 发散离子束或会聚离子束。

公开(公告)号：US07714308B2

公开(公告)日：2010-05-11

申请号：US11899291

申请日：2007-09-05

申请人： Masahito Hiroshima

发明人： Masahito Hiroshima

IPC分类号： H01J37/30 ,  H01J37/08 ,  G21K5/00

CPC分类号： H01J37/1472 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/0455 ,  H01J2237/0456 ,  H01J2237/0458 ,  H01J2237/0835

摘要： This VSB lithography system includes a first, second and third aperture for forming a single electron beam in each of the rectangular opening portion that are provided, and draws a figure pattern using the single electron beam formed by passing the beam through the first, second and third aperture in sequence. Each of the first, second and third aperture has a mechanism for rotationally driving the aperture around an optical axis up to an arbitrary angle from 0 to 360°. Further, in the third aperture, a mechanism for varying the opening slit width of the rectangular opening portion is provided.

摘要翻译： 该VSB光刻系统包括用于在设置的每个矩形开口部分中形成单个电子束的第一，第二和第三孔，并且使用通过使光束穿过第一，第二和第二孔而形成的单个电子束来绘制图形图案 第三个孔径顺序。 第一，第二和第三孔中的每一个具有用于围绕光轴旋转地驱动孔径至0至360°任意角度的机构。 此外，在第三孔中，设置有用于改变矩形开口部分的开口狭缝宽度的机构。