公开(公告)号：US20150371857A1

公开(公告)日：2015-12-24

申请号：US14312617

申请日：2014-06-23

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin WAN ,  Rekha PADMANABHAN ,  Xiao BAI ,  Gary N. CAI ,  Ching-I LI ,  Ger-Pin LIN ,  Shao-Yu HU ,  David HOGLUND ,  Robert E. KAIM ,  Kourosh SAADATMAND

IPC: H01L21/265

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/0835 ,  H01J2237/303 ,  H01J2237/30477

Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

Abstract translation: 在用于工件的较低剂量率离子注入的示例性过程中，可以使用离子源和提取操纵器来产生离子束。 提取操纵器可以位于离离子源的出口孔的间隙距离处。 当提取操纵器定位在与出射孔的最佳间隙距离处时，离开提取操纵器的离子束的电流可以最大化。 提取操纵器从出口孔定位的间隙距离可以不同于最佳间隙距离至少10％。 可以将第一电位施加到第一组电极。 当离子束通过第一组电极时，离子束的x维度可能增加。 工件可以位于离子束中以将离子注入到工件中。