公开(公告)号：US11545427B2

公开(公告)日：2023-01-03

申请号：US16447839

申请日：2019-06-20

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Yuan Kung ,  Chien-Hua Chen ,  Teck-Chong Lee ,  Hung-Yi Lin ,  Pao-Nan Lee ,  Hsin Hsiang Wang ,  Min-Tzu Hsu ,  Po-Hao Chen

IPC: H01L23/52 ,  H01L23/522 ,  H01L49/02 ,  H01L25/16 ,  H01L23/528 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56

Abstract: A capacitor bank structure includes a plurality of capacitors, a protection material, a first dielectric layer and a plurality of first pillars. The capacitors are disposed side by side. Each of the capacitors has a first surface and a second surface opposite to the first surface, and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes are disposed adjacent to the first surface for external connection, and the second electrodes are disposed adjacent to the second surface for external connection. The protection material covers the capacitors, sidewalls of the first electrodes and sidewalls of the second electrodes, and has a first surface corresponding to the first surface of the capacitor and a second surface corresponding to the second surface of the capacitor. The first dielectric layer is disposed on the first surface of the protection material, and defines a plurality of openings to expose the first electrodes. The first pillars are disposed in the openings of the first dielectric layer and protrude from the first dielectric layer.

公开(公告)号：US11373956B2

公开(公告)日：2022-06-28

申请号：US16742788

申请日：2020-01-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Min Lung Huang ,  Hung-Jung Tu ,  Hsin Hsiang Wang ,  Chih-Wei Huang ,  Shiuan-Yu Lin

IPC: H01L23/538 ,  H01L23/31 ,  H01L21/768 ,  H01L23/00 ,  H01L23/528

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first semiconductor device, a first conductive layer and a second conductive layer. The first semiconductor device has a first conductive pad. The first conductive layer is disposed in direct contact with the first conductive pad. The first conductive layer extends along a direction substantially parallel to a surface of the first conductive pad. The second conductive layer is disposed in direct contact with the first conductive pad and spaced apart from the first conductive layer.

公开(公告)号：US11201110B2

公开(公告)日：2021-12-14

申请号：US16528350

申请日：2019-07-31

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Min Lung Huang ,  Hung-Jung Tu ,  Hsin Hsiang Wang

IPC: H01L23/498 ,  H01L21/56 ,  H01L21/48 ,  H01L23/31

Abstract: A semiconductor device package includes a conductive layer, a first conductive pillar, a circuit layer and a second conductive pillar. The conductive layer has a first surface. The first conductive pillar is disposed on the first surface of the conductive layer. The circuit layer is disposed over the conductive layer. The circuit layer has a first surface facing the conductive layer. The second conductive pillar is disposed on the first surface of the circuit layer. The first conductive pillar is physically spaced apart from the second conductive pillar and electrically connected to the second conductive pillar.