公开(公告)号：US20220084958A1

公开(公告)日：2022-03-17

申请号：US17537317

申请日：2021-11-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Peng YANG ,  Yuan-Feng CHIANG ,  Po-Wei LU

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/16

Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

公开(公告)号：US20240128206A1

公开(公告)日：2024-04-18

申请号：US18530117

申请日：2023-12-05

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Peng YANG ,  Yuan-Feng CHIANG ,  Po-Wei LU

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/16 ,  H01L23/31 ,  H01L23/538

CPC classification number: H01L23/562 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/565 ,  H01L23/16 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/96 ,  H01L21/568 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/95001 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/15156 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/351 ,  H01L2924/3511

Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

公开(公告)号：US20180061776A1

公开(公告)日：2018-03-01

申请号：US15683698

申请日：2017-08-22

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Peng YANG ,  Yuan-Feng CHIANG ,  Po-Wei LU

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.