公开(公告)号：US20240128206A1

公开(公告)日：2024-04-18

申请号：US18530117

申请日：2023-12-05

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Peng YANG ,  Yuan-Feng CHIANG ,  Po-Wei LU

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/16 ,  H01L23/31 ,  H01L23/538

CPC classification number: H01L23/562 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/565 ,  H01L23/16 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/96 ,  H01L21/568 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/95001 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/15156 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/351 ,  H01L2924/3511

Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

公开(公告)号：US20250029940A1

公开(公告)日：2025-01-23

申请号：US18904052

申请日：2024-10-01

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ya Fang CHAN ,  Yuan-Feng CHIANG ,  Po-Wei LU

IPC: H01L23/66 ,  H01L21/56 ,  H01L21/768 ,  H01L23/31 ,  H01L23/495

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a dielectric layer. The semiconductor device package further includes an antenna structure disposed in the dielectric layer. The semiconductor device package further includes a semiconductor device disposed on the dielectric layer. The semiconductor device package further includes an encapsulant covering the semiconductor device. The semiconductor device package further includes a conductive pillar having a first portion and a second portion. The first portion surrounded by the encapsulant and the second portion embedded in the dielectric layer.

公开(公告)号：US20210225783A1

公开(公告)日：2021-07-22

申请号：US16745331

申请日：2020-01-16

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ya Fang CHAN ,  Yuan-Feng CHIANG ,  Po-Wei LU

IPC: H01L23/66 ,  H01L23/31 ,  H01L23/495 ,  H01L21/56 ,  H01L21/768

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a dielectric layer. The semiconductor device package further includes an antenna structure disposed in the dielectric layer. The semiconductor device package further includes a semiconductor device disposed on the dielectric layer. The semiconductor device package further includes an encapsulant covering the semiconductor device. The semiconductor device package further includes a conductive pillar having a first portion and a second portion. The first portion surrounded by the encapsulant and the second portion embedded in the dielectric layer.

公开(公告)号：US20220084958A1

公开(公告)日：2022-03-17

申请号：US17537317

申请日：2021-11-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Peng YANG ,  Yuan-Feng CHIANG ,  Po-Wei LU

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/16

Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

公开(公告)号：US20210183723A1

公开(公告)日：2021-06-17

申请号：US16717933

申请日：2019-12-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ya Fang CHAN ,  Yuan-Feng CHIANG ,  Po-Wei LU

IPC: H01L23/367 ,  H01L23/433 ,  H01L21/48 ,  H01L21/768 ,  H01L25/00 ,  H01L25/065

Abstract: A semiconductor heat dissipation structure includes a first semiconductor device including a first active surface and a first back surface opposite to the first active surface, a second semiconductor device including a second active surface and a second back surface opposite to the second active surface, a first heat conductive layer embedded in the first back surface of the first semiconductor device, a second heat conductive layer embedded in the second back surface of the second semiconductor device, and a third heat conductive layer disposed adjoining the first heat conductive layer and extending to the first active surface of the first semiconductor device. The first back surface of the first semiconductor device and the second back surface of the second semiconductor device are in contact with each other. At least a portion of the first heat conductive layer are in contact with the second heat conductive layer.

公开(公告)号：US20180061776A1

公开(公告)日：2018-03-01

申请号：US15683698

申请日：2017-08-22

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Peng YANG ,  Yuan-Feng CHIANG ,  Po-Wei LU

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

公开(公告)号：US20180047651A1

公开(公告)日：2018-02-15

申请号：US15675610

申请日：2017-08-11

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Shao-An CHEN ,  Po-Wei LU ,  Ming Tsung SHEN ,  Yu-Tzu PENG

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/538 ,  H01L21/56

Abstract: The present disclosure relates to wafer level packages including one or more semiconductor dies and a method of manufacturing the same. A method comprises: providing a carrier having a predetermined area, disposing a semiconductor device on the predetermined area, and forming a sacrificial wall on a periphery of the predetermined area.