公开(公告)号：US20190057731A1

公开(公告)日：2019-02-21

申请号：US16079511

申请日：2017-02-16

Applicant: Agency for Science, Technology and Research

Inventor： Sunny Yan Hwee Lua ,  Aarthy Mani

IPC: G11C11/16 ,  H01L43/02 ,  H01L27/22

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/1697 ,  H01L27/228 ,  H01L43/02 ,  H03K3/45

Abstract: Various embodiments may provide a circuit arrangement. The circuit arrangement may include a first spin-orbit torque magnetic tunnel junction cell, a second spin-orbit torque magnetic tunnel junction cell, a first driver circuit arrangement, a second driver circuit arrangement, and a read circuit arrangement. The circuit arrangement allows for the operation of a non-volatile flip-flop based on spin-orbit torque effect.

公开(公告)号：US10923648B2

公开(公告)日：2021-02-16

申请号：US16478195

申请日：2018-01-17

Applicant: Agency for Science, Technology and Research

Inventor： Karim Ali Abdeltawwab Ahmed ,  Sunny Yan Hwee Lua ,  Fei Li

IPC: G11C11/00 ,  H01L43/02 ,  G11C11/16 ,  G11C11/56 ,  H01F10/32 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

Abstract: Various embodiments may relate to a memory cell. The memory cell may include a first cell electrode, a first insulator layer and a first magnetic free layer between the first cell electrode and the first insulator layer. The memory cell may also include a second cell electrode, a second insulator layer, and a second magnetic free layer between the second cell electrode and the second insulator layer. A magnetic pinned layer may be between the first insulator layer and the second insulator layer. A direction of magnetization of the first magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the first cell electrode. A direction of magnetization of the second magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the second cell electrode.

公开(公告)号：US20190334080A1

公开(公告)日：2019-10-31

申请号：US16478195

申请日：2018-01-17

Applicant: Agency for Science, Technology and Research

Inventor： Karim Ali Abdeltawwab Ahmed ,  Sunny Yan Hwee Lua ,  Fei Li

IPC: H01L43/02 ,  H01L43/12 ,  G11C11/16 ,  G11C11/56 ,  H01L27/22 ,  H01F10/32

Abstract: Various embodiments may relate to a memory cell. The memory cell may include a first cell electrode, a first insulator layer and a first magnetic free layer between the first cell electrode and the first insulator layer. The memory cell may also include a second cell electrode, a second insulator layer, and a second magnetic free layer between the second cell electrode and the second insulator layer. A magnetic pinned layer may be between the first insulator layer and the second insulator layer. A direction of magnetization of the first magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the first cell electrode. A direction of magnetization of the second magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the second cell electrode.

公开(公告)号：US10453511B2

公开(公告)日：2019-10-22

申请号：US16079511

申请日：2017-02-16

Applicant: Agency for Science, Technology and Research

Inventor： Sunny Yan Hwee Lua ,  Aarthy Mani

IPC: G11C11/16 ,  H03K3/45 ,  H01L27/22 ,  H01L43/02

Abstract: Various embodiments may provide a circuit arrangement. The circuit arrangement may include a first spin-orbit torque magnetic tunnel junction cell, a second spin-orbit torque magnetic tunnel junction cell, a first driver circuit arrangement, a second driver circuit arrangement, and a read circuit arrangement. The circuit arrangement allows for the operation of a non-volatile flip-flop based on spin-orbit torque effect.