公开(公告)号：US09087975B2

公开(公告)日：2015-07-21

申请号：US13745993

申请日：2013-01-21

Applicant: Agency for Science, Technology and Research

Inventor： Xinpeng Wang ,  Xiang Li ,  Navab Singh ,  Guo-Qiang Patrick Lo

IPC: H01L45/00 ,  H01L27/24 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01L45/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01L27/2409 ,  H01L27/2454 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/16 ,  Y10S977/762 ,  Y10S977/943

Abstract: According to embodiments of the present invention, a resistive memory arrangement is provided. The resistive memory arrangement includes a nanowire, and a resistive memory cell including a resistive layer including a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire, and a conductive layer arranged on at least a part of the resistive layer. According to further embodiments of the present invention, a method of forming a resistive memory arrangement is also provided.

Abstract translation: 根据本发明的实施例，提供了一种电阻式存储装置。 电阻性存储器装置包括纳米线和包括电阻层的电阻性存储单元，该电阻层包括电阻变化材料，其中电阻层的至少一部分布置成覆盖纳米线表面的至少一部分，导电层 布置在电阻层的至少一部分上。 根据本发明的另外的实施例，还提供了形成电阻式存储装置的方法。