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公开(公告)号:US20240103557A1
公开(公告)日:2024-03-28
申请号:US17947465
申请日:2022-09-19
Applicant: Apple Inc.
Inventor: Giulio Maria Iadicicco , Angelo Bassi
IPC: G05F3/26
CPC classification number: G05F3/265
Abstract: A bandgap circuit that is area efficient and has a low power consumption. The bandgap circuit includes a voltage generator circuit, and a sample and hold circuit coupled to the voltage generator circuit. The voltage generator circuit includes a pair of transistors each connected in a diode configuration and biased with a respective current source of a plurality of current sources of the voltage generator circuit. During a sample phase, the sample and hold circuit samples a first voltage between a first base and a first emitter of a first transistor of the pair of transistors and a second voltage between a second base and a second emitter of a second transistor of the pair of transistors. During a hold phase subsequent to the sample phase, the sample and hold circuit generates an output voltage as a combination of the sampled first and second voltages.
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公开(公告)号:US12111676B2
公开(公告)日:2024-10-08
申请号:US17947465
申请日:2022-09-19
Applicant: Apple Inc.
Inventor: Giulio Maria Iadicicco , Angelo Bassi
IPC: G05F3/26
CPC classification number: G05F3/265
Abstract: A bandgap circuit that is area efficient and has a low power consumption. The bandgap circuit includes a voltage generator circuit, and a sample and hold circuit coupled to the voltage generator circuit. The voltage generator circuit includes a pair of transistors each connected in a diode configuration and biased with a respective current source of a plurality of current sources of the voltage generator circuit. During a sample phase, the sample and hold circuit samples a first voltage between a first base and a first emitter of a first transistor of the pair of transistors and a second voltage between a second base and a second emitter of a second transistor of the pair of transistors. During a hold phase subsequent to the sample phase, the sample and hold circuit generates an output voltage as a combination of the sampled first and second voltages.
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公开(公告)号:US20240283450A1
公开(公告)日:2024-08-22
申请号:US18172871
申请日:2023-02-22
Applicant: Apple Inc.
IPC: H03K17/693 , G06F1/26
CPC classification number: H03K17/693 , G06F1/26 , H03K19/018521
Abstract: A multiplex circuit for computer systems includes multiple bootstrap switches that share a common capacitor for generating a boost voltage. When one of the bootstrap switches is activated, it is coupled to the common capacitor which is used to generate the boost voltage to control a switch transistor in the activated bootstrap circuit. Upon deactivating an active bootstrap switch, the common capacitor is pre-charged prior to the activation of another bootstrap switch.
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公开(公告)号:US11777398B2
公开(公告)日:2023-10-03
申请号:US17144902
申请日:2021-01-08
Applicant: Apple Inc.
Inventor: Giulio Maria Iadicicco , Michael Couleur , Siarhei Meliukh
IPC: H02M1/08 , H03K17/687 , H02M3/158 , H03K17/06 , H02M1/00
CPC classification number: H02M1/08 , H02M3/158 , H03K17/6872 , H02M1/0006 , H03K17/063
Abstract: Circuitry for bootstrapping and precharging a gate of a field-effect transistor (FET) is disclosed. In one embodiment, an apparatus includes a first transistor coupled to a switching node and further coupled to receive a supply voltage from a supply voltage node, and a second transistor coupled between the switching node and a ground node, wherein the first and second transistors are of a same type. A precharge circuit is configured to precharge a gate terminal of the first transistor to a voltage that is less than a supply voltage on the voltage supply node. The apparatus also includes a bootstrap circuit. Subsequent to precharging the gate terminal of the first transistor, the bootstrap circuit is configured to cause activation of the first transistor by charging the gate terminal to a voltage greater than the supply voltage.
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公开(公告)号:US20220224216A1
公开(公告)日:2022-07-14
申请号:US17144902
申请日:2021-01-08
Applicant: Apple Inc.
Inventor: Giulio Maria Iadicicco , Michael Couleur , Siarhei Meliukh
IPC: H02M1/08 , H02M3/158 , H03K17/687
Abstract: Circuitry for bootstrapping and precharging a gate of a field-effect transistor (FET) is disclosed. In one embodiment, an apparatus includes a first transistor coupled to a switching node and further coupled to receive a supply voltage from a supply voltage node, and a second transistor coupled between the switching node and a ground node, wherein the first and second transistors are of a same type. A precharge circuit is configured to precharge a gate terminal of the first transistor to a voltage that is less than a supply voltage on the voltage supply node. The apparatus also includes a bootstrap circuit. Subsequent to precharging the gate terminal of the first transistor, the bootstrap circuit is configured to cause activation of the first transistor by charging the gate terminal to a voltage greater than the supply voltage.
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