公开(公告)号：US20220102404A1

公开(公告)日：2022-03-31

申请号：US17473855

申请日：2021-09-13

Applicant: Apple Inc.

Inventor： Hong Wei Lee ,  Cristiano L. Niclass ,  Shingo Mandai ,  Xiaofeng Fan

IPC: H01L27/146 ,  H01L31/107

Abstract: Disclosed herein are photodetectors using arrays of pixels with single-photon avalanche diodes (SPADs). The pixel arrays may have configurations that include one or more control transistors for each SPAD collocated on the same chip or wafer as the pixels and located on a surface of the wafer opposite to the light gathering surface of the pixel arrays. The control transistors may be positioned or configured for interconnection with a logic chip that is bonded to the wafer of the pixel array. The pixels may be formed in a substrate having doping gradient. The control transistors may be positioned on or within the SPADs, or adjacent to, but isolated from, the SPADs. Isolation between the individual SPADs and the respective control transistors may make use of shallow trench isolation regions or deep trench isolation regions.

公开(公告)号：US20240079440A1

公开(公告)日：2024-03-07

申请号：US17903067

申请日：2022-09-06

Applicant: Apple Inc.

Inventor： Oray O. Cellek ,  Fei Tan ,  Gershon Rosenblum ,  Hong Wei Lee ,  Cheng-Ying Tsai ,  Jae Y. Park ,  Christophe Verove ,  John L Orlowski ,  Siddharth Joshi ,  Xiangli Li ,  David Coulon ,  Xiaofeng Fan ,  Keith Lyon ,  Nicolas Hotellier ,  Arnaud Laflaquière

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14652 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1465 ,  H04N5/378

Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.

公开(公告)号：US20220320174A1

公开(公告)日：2022-10-06

申请号：US17707495

申请日：2022-03-29

Applicant: Apple Inc.

Inventor： Dajiang Yang ,  Hong Wei Lee ,  Xiaofeng Fan ,  Oray O. Cellek ,  Xiangli Li ,  Kai Shen

IPC: H01L27/146 ,  G02B3/00 ,  H04N5/3745 ,  H04N5/353 ,  H04N5/33

Abstract: Disclosed herein are global shutter image sensors and methods of operating such image sensors. An image sensor includes a semiconductor wafer having a light receiving surface opposite an electrical connection surface; an oxide extending from the light receiving surface toward the electrical connection surface and at least partially surrounding a pixel region; a photodiode disposed within the pixel region; and a set of storage nodes disposed under the photodiode, between the photodiode and the electrical connection surface. The set of storage nodes comprises a first storage node and a second storage node. The storage nodes may be disposed vertically beneath the photodiode, or side by side.

公开(公告)号：US20240107782A1

公开(公告)日：2024-03-28

申请号：US17950325

申请日：2022-09-22

Applicant: Apple Inc.

Inventor： Hong Wei Lee ,  Oray O. Cellek

IPC: H01L27/28 ,  G01J5/10 ,  H01L27/146 ,  H01L27/30 ,  H04N5/369 ,  H04N9/04

CPC classification number: H01L27/286 ,  G01J5/10 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/307 ,  H04N5/379 ,  H04N9/04553 ,  G01J2005/0077

Abstract: A sensor module includes a silicon substrate. A set of isolation walls defines, in the silicon substrate, an array of silicon-based image sensor pixels and an array of cavities. An infrared (IR)-sensitive material in the array of cavities forms an array of IR sensor pixels in a same focal plane as the array of silicon-based image sensor pixels.

公开(公告)号：US12274099B2

公开(公告)日：2025-04-08

申请号：US17707495

申请日：2022-03-29

Applicant: Apple Inc.

Inventor： Dajiang Yang ,  Hong Wei Lee ,  Xiaofeng Fan ,  Oray O. Cellek ,  Xiangli Li ,  Kai Shen

IPC: H01L27/146 ,  G02B3/00 ,  H04N25/20 ,  H04N25/532 ,  H04N25/771 ,  H10F39/00 ,  H10F39/18

Abstract: Disclosed herein are global shutter image sensors and methods of operating such image sensors. An image sensor includes a semiconductor wafer having a light receiving surface opposite an electrical connection surface; an oxide extending from the light receiving surface toward the electrical connection surface and at least partially surrounding a pixel region; a photodiode disposed within the pixel region; and a set of storage nodes disposed under the photodiode, between the photodiode and the electrical connection surface. The set of storage nodes comprises a first storage node and a second storage node. The storage nodes may be disposed vertically beneath the photodiode, or side by side.