公开(公告)号：US20170018439A1

公开(公告)日：2017-01-19

申请号：US14801542

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  David Cui ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/32138 ,  H01J37/32449 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/7684

Abstract: Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts with the halogenated etch product to form a volatile etch product that can be removed in the gas phase from the etched surface of the metal layer. The surface roughness may be reduced by performing one or more plasma treatments on the etching metal layer after a plurality of etching sequences. Surface roughness is also reduced by controlling the temperature and length of time the metal layer is reacting with the etchant precursors.

Abstract translation: 描述了用于蚀刻难以挥发的金属层（例如钴，镍和铂）以形成具有降低的表面粗糙度的蚀刻金属层的方法。 所述方法包括用由含氢前体形成的局部等离子体预处理金属层。 然后将预处理的金属层与含卤素的前体反应以形成具有卤化蚀刻产物的卤化金属层。 含氮和氮的前体与卤化蚀刻产物反应以形成挥发性蚀刻产物，其可以在气相中从金属层的蚀刻表面除去。 通过在多个蚀刻顺序之后对蚀刻金属层进行一次或多次等离子体处理，可以减少表面粗糙度。 通过控制金属层与蚀刻剂前体反应的时间的温度和长度也可以减少表面粗糙度。

公开(公告)号：US09659791B2

公开(公告)日：2017-05-23

申请号：US14801542

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  David Cui ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/32138 ,  H01J37/32449 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/7684

Abstract: Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts with the halogenated etch product to form a volatile etch product that can be removed in the gas phase from the etched surface of the metal layer. The surface roughness may be reduced by performing one or more plasma treatments on the etching metal layer after a plurality of etching sequences. Surface roughness is also reduced by controlling the temperature and length of time the metal layer is reacting with the etchant precursors.