公开(公告)号：US11870202B2

公开(公告)日：2024-01-09

申请号：US17009851

申请日：2020-09-02

Applicant: Applied Materials, Inc.

Inventor： Rajesh Kumar Putti ,  Vinodh Ramachandran ,  Ananthkrishna Jupudi ,  Lean Wui Koh ,  Prashant Agarwal

IPC: H03F1/52 ,  H01S3/041 ,  H01S3/067 ,  H01S3/042 ,  H01S3/23

CPC classification number: H01S3/041 ,  H01S3/042 ,  H01S3/06779 ,  H01S3/06783 ,  H01S3/2308

Abstract: Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.