公开(公告)号：US11870202B2

公开(公告)日：2024-01-09

申请号：US17009851

申请日：2020-09-02

Applicant: Applied Materials, Inc.

Inventor： Rajesh Kumar Putti ,  Vinodh Ramachandran ,  Ananthkrishna Jupudi ,  Lean Wui Koh ,  Prashant Agarwal

IPC: H03F1/52 ,  H01S3/041 ,  H01S3/067 ,  H01S3/042 ,  H01S3/23

CPC classification number: H01S3/041 ,  H01S3/042 ,  H01S3/06779 ,  H01S3/06783 ,  H01S3/2308

Abstract: Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.

公开(公告)号：USD967081S1

公开(公告)日：2022-10-18

申请号：US29756723

申请日：2020-10-30

Applicant: Applied Materials, Inc.

Designer： Rajesh Kumar Putti ,  Prashant Agarwal ,  Ananthkrishna Jupudi

公开(公告)号：US11362404B2

公开(公告)日：2022-06-14

申请号：US17084804

申请日：2020-10-30

Applicant: Applied Materials, Inc.

Inventor： Rajesh Kumar Putti ,  Prashant Agarwal ,  Ananthkrishna Jupudi

IPC: H01P1/08 ,  H01P1/04

Abstract: Apparatus for transmitting microwaves into a process chamber using a microwave pressure window assembly. The microwave pressure window assembly may include a first plate with a first aperture surrounded by a first recess for a first pressure seal, a second plate with a second aperture surrounded by a second recess for a second pressure seal, a dielectric plate configured to transmit microwaves and interposed between the first plate and the second plate and between the first pressure seal and the second pressure seal. The apertures include a first vertical step area on a first vertical side of the apertures and a second vertical step area on a second vertical side of the apertures opposite of the first vertical side. The first vertical step areas and the second vertical step areas may have a thickness of approximately 50% of a thickness of the plates that includes a dielectric plate recess.