公开(公告)号：US20140231384A1

公开(公告)日：2014-08-21

申请号：US14177893

申请日：2014-02-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Brian Saxton UNDERWOOD ,  Abhijit Basu MALLICK ,  Nitin INGLE ,  Roman GOUK ,  Steven VERHAVERBEKE

IPC: G11B5/85

CPC classification number: G11B5/85 ,  G11B5/855

Abstract: Method and apparatus for forming a patterned magnetic substrate are provided. A patterned resist is formed on a magnetically active surface of a substrate. An oxide layer is formed over the patterned resist by a flowable CVD process. The oxide layer is etched to expose portions of the patterned resist. The patterned resist is then etched, using the etched oxide layer as a mask, to expose portions of the magnetically active surface. A magnetic property of the exposed portions of the magnetically active surface is then modified by directing energy through the etched resist layer and the etched oxide layer, which are subsequently removed from the substrate.

Abstract translation: 提供了用于形成图案化磁性基底的方法和装置。 在基板的磁性活性表面上形成图案化的抗蚀剂。 通过可流动的CVD工艺在图案化的抗蚀剂上形成氧化物层。 蚀刻氧化物层以暴露图案化抗蚀剂的部分。 然后使用蚀刻的氧化物层作为掩模蚀刻图案化的抗蚀剂，以暴露磁性活性表面的部分。 然后通过将能量引导通过经蚀刻的抗蚀剂层和经蚀刻的氧化物层（随后从衬底去除）来改变磁性活性表面的暴露部分的磁性。

公开(公告)号：US20150140833A1

公开(公告)日：2015-05-21

申请号：US14153586

申请日：2014-01-13

Applicant: Applied Materials, Inc.

Inventor： Kiran V. THADANI ,  Abhijit Basu MALLICK ,  Nitin INGLE

IPC: H01L21/02

CPC classification number: H01L21/02219 ,  C23C16/36 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/67742

Abstract: Embodiments of the invention generally relate to methods of forming an etch resistant silicon-carbon-nitrogen layer. The methods generally include activating a silicon-containing precursor and a nitrogen-containing precursor in the processing region of a processing chamber in the presence of a plasma and depositing a thin flowable silicon-carbon-nitrogen material on a substrate using the activated silicon-containing precursor and a nitrogen-containing precursor. The thin flowable silicon-carbon-nitrogen material is subsequently cured using one of a variety of curing techniques. A plurality of thin flowable silicon-carbon-nitrogen material layers are deposited sequentially to create the final layer.

Abstract translation: 本发明的实施方案一般涉及形成耐蚀刻硅 - 碳 - 氮层的方法。 所述方法通常包括在存在等离子体的情况下在处理室的处理区域中活化含硅前体和含氮前体，并使用活化的含硅物质在衬底上沉积薄的可流动的硅 - 碳 - 氮材料 前体和含氮前体。 随后使用各种固化技术之一固化薄的可流动的硅 - 碳 - 氮材料。 顺序沉积多个薄的可流动的硅 - 碳 - 氮材料层以产生最终层。