公开(公告)号：US20240306391A1

公开(公告)日：2024-09-12

申请号：US18597057

申请日：2024-03-06

Applicant: Applied Materials, Inc.

Inventor： Hao-Ling Tang ,  Arvind Kumar ,  Mahendra Pakala ,  Keith Tatseun Wong ,  Yi-Hsuan Hsiao ,  Dongqing Yang ,  Mark Conrad ,  Rio Soedibyo ,  Minrui Yu

IPC: H10B43/27 ,  H10B43/35

CPC classification number: H10B43/27 ,  H10B43/35

Abstract: Two-dimensional (2D) materials formed in very thin layers improve the operation of semiconductor devices. However, forming a contact on 2D material tends to damage and penetrate the 2D material. A relatively gentle etch process has been developed that is very selective to the 2D material and allows vertical holes to be etched down to the 2D material without damaging or penetrating the 2D material. A low-power deposition process forms a protective liner when performing the metal fill to further prevent damage to the 2D material when forming the metal contacts in the holes. These processes allow a vertical metal contact to be formed on a planar 2D material or a vertical sidewall contact be formed in a 3D NAND without damaging the 2D material. This increases the contact area, reduces the contact resistance, and improves the performance of the 2D material in the device.

公开(公告)号：US20240363357A1

公开(公告)日：2024-10-31

申请号：US18631384

申请日：2024-04-10

Applicant: Applied Materials, Inc.

Inventor： David H. Collins ,  Nobuyuki Takahashi ,  Pin Hian Lee ,  Rio Soedibyo ,  Sanggil Bae ,  Houssam Lazkani ,  Songkram Sonny Srivathanakul ,  Raman Gaire ,  Gopal Bajaj

IPC: H01L21/311 ,  H01L21/02 ,  H01L23/00

CPC classification number: H01L21/31105 ,  H01L21/0217 ,  H01L21/02274 ,  H01L23/562

Abstract: Embodiments of the present technology may include semiconductor processing methods. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor and a nitrogen-containing precursor. A substrate including one or more materials may be disposed within the processing region. The substrate may be characterized by a first bowing of the substrate. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-nitrogen-containing material on the substrate. The layer of silicon-and-nitrogen-containing material may be characterized by a tensile stress. Subsequent forming the layer of silicon-and-nitrogen-containing material, the substrate may be characterized by a second bowing of the substrate that is less than the first bowing of the substrate.