公开(公告)号：US20210043429A1

公开(公告)日：2021-02-11

申请号：US16933926

申请日：2020-07-20

Applicant: Applied Materials, Inc.

Inventor： Hsin-wei TSENG ,  Casey Jane MADSEN ,  Yikai CHEN ,  Irena WYSOK ,  Halbert CHONG

IPC: H01J37/32 ,  C23C14/06 ,  C23C14/35 ,  C23C14/34 ,  H01J37/34

Abstract: Embodiments generally relate to a chamber component to be used in plasma processing chambers for semiconductor or display processing. In one embodiment, a chamber component includes a textured surface having a surface roughness ranging from about 150 microinches to about 450 microinches and a coating layer disposed on the textured surface. The coating layer may be a silicon layer having a purity ranging from about 90 weight percent to about 99 weight percent, a thickness ranging from about 50 microns to about 500 microns, and an electrical resistivity ranging from about 1 E-3 ohm*m to about 1 E3 ohm*m. The coating layer provides strong adhesion for materials deposited in the plasma processing chamber, which reduces the materials peeling from the chamber component. The coating layer also enables oxygen plasma cleaning for further reducing materials deposited on the chamber component and provides the protection of the textured surface located therebelow.

公开(公告)号：US20200370174A1

公开(公告)日：2020-11-26

申请号：US16806656

申请日：2020-03-02

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Lin ZHANG ,  Jiyong HUANG ,  Joseph C. WERNER ,  Stanley WU ,  Mahesh Adinath KANAWADE ,  Yikai CHEN ,  Yixing LIN ,  Ying MA

IPC: C23C16/44 ,  C01F17/265

Abstract: Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.

公开(公告)号：US20250149305A1

公开(公告)日：2025-05-08

申请号：US18386721

申请日：2023-11-03

Applicant: Applied Materials, Inc.

Inventor： Tianshu LI ,  Yikai CHEN ,  Aniruddha PAL ,  Yao-Hung YANG ,  Saurabh M. CHAUDHARI

IPC: H01J37/32 ,  C23C16/32

Abstract: A method for forming a part for a process chamber incorporates a substrate core in the part. The method may include performing a silicon carbide (SIC) deposition process on a substrate to form a SiC coating of approximately 1 mm to approximately 2 mm on all sides of the substrate to form a composite SiC structure where the substrate is composed of a stack of a plurality of substrates each with a thickness of approximately 1 mm to approximately 2 mm and separating the stack of the plurality of substrates of the composite SiC structure to form multiple composite structures where each multiple composite structure has an SiC coating on a top surface and on all side surfaces and a bottom surface of exposed substrate material.

公开(公告)号：US20240186123A1

公开(公告)日：2024-06-06

申请号：US18074385

申请日：2022-12-02

Applicant: Applied Materials, Inc.

Inventor： Yao-Hung YANG ,  Chih-Yang CHANG ,  Yikai CHEN ,  Rongping WANG

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32183

Abstract: Embodiments of substrate supports for process chambers are provided herein. In some embodiments, a substrate support for a process chamber includes: a pedestal having a support surface for supporting a substrate, one or more heating elements disposed therein, and a radio frequency (RF) electrode disposed therein; a hollow shaft coupled to a lower surface of the pedestal; and an RF rod extending through the hollow shaft and coupled to the RF electrode, wherein an impedance of the RF rod is less than about 0.2 ohms.