公开(公告)号：US20230069303A1

公开(公告)日：2023-03-02

申请号：US17465753

申请日：2021-09-02

Applicant: Applied Materials Israel Ltd.

Inventor： Roman KRIS ,  Ilan BEN-HARUSH ,  Rafael BISTRITZER ,  Vadim VERESCHAGIN ,  Elad SOMMER ,  Grigory KLEBANOV ,  Arundeepth THAMARASSERY ,  Jannelle Anna GEVA ,  Gal Daniel GUTTERMAN ,  Einat FRISHMAN ,  Sahar LEVIN

IPC: G01B9/02 ,  G01B11/24 ,  G06T7/00

Abstract: There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.

公开(公告)号：US20240428395A1

公开(公告)日：2024-12-26

申请号：US18214231

申请日：2023-06-26

Applicant: Applied Materials Israel Ltd.

Inventor： Rafael BISTRITZER ,  Ilan BEN-HARUSH ,  Mor BARAM ,  Tal BEN-SHLOMO ,  Nir BILLFELD (LEVI) ,  Noam TEOMIM

IPC: G06T7/00 ,  G06T7/60

Abstract: There is provided a metrology system and method. The method includes obtaining a set of tool parameters selected from multiple tool parameters characterizing the examination tool, varying a value of each tool parameter from the set a number of times, giving rise to a plurality of tool settings corresponding to a plurality of combinations of varying values of the set of tool parameters, configuring an examination tool with each given tool setting of the plurality of tool settings; and in response to receiving, from the examination tool, a plurality of sets of images corresponding to the plurality of tool settings and representing expected tool variations over time in a single tool or between different tools, optimizing a metrology algorithm using the plurality of sets of images so as to meet at least one metrology metric including tool matching.

公开(公告)号：US20230206417A1

公开(公告)日：2023-06-29

申请号：US17565273

申请日：2021-12-29

Applicant: Applied Materials Israel Ltd.

Inventor： Elad COHEN ,  Victor EGOROV ,  Ilan BEN-HARUSH ,  Rafael BISTRITZER

IPC: G06T7/00 ,  G06T7/10

CPC classification number: G06T7/0004 ,  G06T7/10

Abstract: There is provided a system of examination of a semiconductor specimen, comprising a processor and memory circuitry configured to obtain, for each given candidate defect of a plurality of candidate defects in an image of the specimen, a given area of the given candidate defect in the image, obtain a reference image, perform a segmentation of at least part of the reference image, to determine, for each given candidate defect, first reference areas in the reference image matching a given reference area corresponding to the given area, select among the first reference areas, a plurality of second reference areas, obtain a plurality of corresponding second areas in the image, and use data informative of a pixel intensity of the second areas and data informative of a pixel intensity of the given area to determine whether the given candidate defect corresponds to a defect.

公开(公告)号：US20220207681A1

公开(公告)日：2022-06-30

申请号：US17135939

申请日：2020-12-28

Applicant: Applied Materials Israel Ltd.

Inventor： Roman KRIS ,  Grigory KLEBANOV ,  Einat FRISHMAN ,  Tal ORENSTEIN ,  Meir VENGROVER ,  Noa MAROM ,  Ilan BEN-HARUSH ,  Rafael BISTRITZER ,  Sharon DUVDEVANI-BAR

IPC: G06T7/00 ,  G01N21/95 ,  G03F7/20

Abstract: There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.

公开(公告)号：US20250004386A1

公开(公告)日：2025-01-02

申请号：US18215083

申请日：2023-06-27

Applicant: Applied Materials Israel Ltd.

Inventor： Ilan BEN-HARUSH ,  Rafael BISTRITZER ,  Yehoshua COHEN

IPC: G03F7/00

Abstract: There is provided a system and method for examining a semiconductor specimen. The method includes obtaining a runtime image of a semiconductor specimen acquired by an examination tool; processing the runtime image to create one or more image strips each containing an edge, and for each image strip, extracting a sequence of topo points representative of a contour of the edge therein; providing the sequence of topo points for each image strip to a trained machine learning (ML) model to be processed, and obtaining, as an output of the ML model, a sequence of updated topo points; and obtaining measurement data on the runtime image using the sequence of updated topo points, wherein the measurement data has improved performance with respect to at least one metrology metric.

公开(公告)号：US20230420308A1

公开(公告)日：2023-12-28

申请号：US17848360

申请日：2022-06-23

Applicant: Applied Materials Israel Ltd.

Inventor： Rafael BISTRITZER ,  Vadim VERESCHAGIN ,  Grigory KLEBANOV ,  Roman KRIS ,  Ilan BEN-HARUSH ,  Omer KEREM ,  Asaf GOLOV ,  Elad SOMMER

IPC: H01L21/66 ,  G06T7/00 ,  G06T7/11 ,  G06V10/764 ,  G06T7/50 ,  G06T7/66

CPC classification number: H01L22/12 ,  G06T7/0004 ,  G06T7/11 ,  G06V10/764 ,  G06T7/50 ,  G06T7/66 ,  G06T2207/20021 ,  G06T2207/30148

Abstract: A system of examination of a semiconductor specimen, comprising a processor and memory circuitry (PMC) configured to:



obtain an image of a hole formed in the semiconductor specimen, wherein the hole exposes at least one layer of a plurality of layers of the semiconductor specimen,
segment the image into a plurality of regions,
generate at least one of:

data Dpix_intensity informative of one or more pixel intensities of one or more regions of the plurality of regions,
data Dgeometry informative of one or more geometrical properties of one or more regions of the plurality of regions,


feed at least one of Dpix_intensity or Dgeometry to a trained classifier to obtain an output, wherein the output of the trained classifier is usable to determine whether the hole ends at a target layer of the plurality of layers.

公开(公告)号：US20230230223A1

公开(公告)日：2023-07-20

申请号：US17580541

申请日：2022-01-20

Applicant: Applied Materials Israel Ltd.

Inventor： Einat FRISHMAN ,  Ilan BEN-HARUSH ,  Rafael BISTRITZER

IPC: G06T7/00

CPC classification number: G06T7/0006 ,  G06T2207/30148

Abstract: There is provided a system and a method comprising obtaining data Dcontour informative of a contour of an element of a semiconductor specimen acquired by an examination tool, using the data Dcontour to generate a signal informative of a curvature of the contour of the element, determining at least one of data Dperiodicity informative of a periodicity of the signal, or data Ddiscontinuities informative of a number of discontinuities in the signal, wherein each discontinuity is informative of a transition between a convex portion of the contour and a concave portion of the contour, and using at least one of the data Dperiodicity or the data Ddiscontinuities to determine data informative of correct manufacturing of the element.