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    Multi-perspective examination of a specimen
    1.
    发明授权
    Multi-perspective examination of a specimen 有权

    公开(公告)号：US11035803B1

    公开(公告)日：2021-06-15

    申请号：US16802480

    申请日：2020-02-26

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ido Almog ,  Ori Golani

    IPC: G01N21/95 ,  G06T7/00

    Abstract: There is provided a system and a method comprising obtaining data representative of potential defects in at least one image of a semiconductor specimen, for each potential defect of at least a first subset of potential defects of the semiconductor specimen, obtaining pixel values representative of the potential defect in multiple images of the specimen which differ from each other by at least one parameter, classifying the potential defects into a plurality of first clusters, for each first cluster, building, based on pixel values representative of potential defects, at least one first matching filter for the first cluster, for at least a given potential defect not belonging to the first subset, determining whether it corresponds to a defect based on the first matching filters associated with the plurality of first clusters.

    MODEL-BASED ACOUSTO-OPTIC DEPTH-METROLOGY OF SPECIMENS
    3.
    发明申请
    MODEL-BASED ACOUSTO-OPTIC DEPTH-METROLOGY OF SPECIMENS 有权

    公开(公告)号：US20250116597A1

    公开(公告)日：2025-04-10

    申请号：US18377431

    申请日：2023-10-06

    Applicant: Applied Materials Israel Ltd.

    Inventor： Guy Shwartz ,  Ido Almog ,  Ori Golani

    IPC: G01N21/17 ,  G01N21/95 ,  G06N3/0455 ,  G06N3/084

    Abstract: Disclosed herein is a method for non-destructive depth-profiling including projecting a pulsed pump beam into a specimen, projecting a pulsed probe beam thereinto, and sensing light returned therefrom to obtain a measured signal. Each probe pulse is configured to undergo Brillouin scattering off a primary acoustic pulse induced by the directly preceding pump pulse, so as to be scattered there off at a respective depth within the specimen. The method further includes executing an optimization algorithm configured to receive as inputs the measured signal, and/or a processed signal obtained therefrom, and output values of structural parameter(s) characterizing the specimen through minimization of a cost function indicative of a difference between the measured signal and a simulated signal obtained using a forward model simulating the scattering of a pulsed probe beam off at least the primary acoustic pulses.

    Depth profiling of semiconductor structures using picosecond ultrasonics
    4.
    发明授权
    Depth profiling of semiconductor structures using picosecond ultrasonics 有权

    公开(公告)号：US11859963B2

    公开(公告)日：2024-01-02

    申请号：US17970054

    申请日：2022-10-20

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ori Golani ,  Ido Almog

    IPC: G01B11/22 ,  G01B11/06

    CPC classification number: G01B11/22 ,  G01B11/06 ,  G01B2210/56

    Abstract: Disclosed herein is a method for depth-profiling of samples including a target region including a lateral structural feature. The method includes projecting an optical pump pulse on a semiconductor device comprising a target region, such as to produce an acoustic pulse which propagates within the target region of the semiconductor device, wherein a wavelength of the pump pulse is at least two times greater than a lateral extent of a lateral structural feature of the semiconductor device along at least one lateral direction, projecting an optical probe pulse on the semiconductor device, such that the probe pulse undergoes Brillouin scattering off the acoustic pulse within the target region, detecting a scattered component of the probe pulse to obtain a measured signal, and analyzing the measured signal to obtain a depth-dependence of at least one parameter characterizing the lateral structural feature.

    METHODS AND SYSTEMS FOR OBTAINING A 3D PROFILE OF A SAMPLE
    5.
    发明申请
    METHODS AND SYSTEMS FOR OBTAINING A 3D PROFILE OF A SAMPLE 有权

    公开(公告)号：US20250165663A1

    公开(公告)日：2025-05-22

    申请号：US18951499

    申请日：2024-11-18

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ido Almog ,  Ori Golani

    IPC: G06F30/17

    Abstract: A method for obtaining a 3D profile of a sample comprising: receiving a first and second sets of data relating to first and second groups of structural parameters from first and second metrology tools, wherein the first and second groups of structural parameters have at least one structural parameter in common; analyzing the first set of data to obtain values for the first group of structural parameters; analyzing the second set of data to obtain values for the second group of structural paraments, wherein values obtained from the analysis of the first set of data for at least some of the common structural features are used to constrain the analysis of the second set of data; and generating a 3D profile of the sample by combining values obtained in the analyses of the first and second sets of data.

    Hybrid scanning electron microscopy and acousto-optic based metrology
    6.
    发明授权
    Hybrid scanning electron microscopy and acousto-optic based metrology 有权

    公开(公告)号：US12278085B2

    公开(公告)日：2025-04-15

    申请号：US17714908

    申请日：2022-04-06

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Guy Shwartz ,  Ori Golani ,  Itamar Shani ,  Ido Almog

    IPC: H01J37/28 ,  G01N23/2251 ,  H01J37/22 ,  H01J37/244

    Abstract: Disclosed herein is a method for non-destructive hybrid acousto-optic and scanning electron microscopy-based metrology. The method includes: (i) obtaining acousto-optic and scanning electron microscopy measurement data of an inspected structure on a sample; (ii) processing the measurement data to extract values of key measurement parameters corresponding to the acousto-optic measurement data and the scanning electron microscopy measurement data, respectively; and (iii) obtaining estimated values of one or more structural parameters of the inspected structure by inputting the extracted values into an algorithm, which is configured to jointly process the extracted values to output estimated values of the one or more structural parameters.

    DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES USING PICOSECOND ULTRASONICS
    9.
    发明申请
    DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES USING PICOSECOND ULTRASONICS 有权

    公开(公告)号：US20230040995A1

    公开(公告)日：2023-02-09

    申请号：US17970054

    申请日：2022-10-20

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ori Golani ,  Ido Almog

    IPC: G01B11/22 ,  G01B11/06

    Abstract: Disclosed herein is a method for depth-profiling of samples including a target region including a lateral structural feature. The method includes projecting an optical pump pulse on a semiconductor device comprising a target region, such as to produce an acoustic pulse which propagates within the target region of the semiconductor device, wherein a wavelength of the pump pulse is at least two times greater than a lateral extent of a lateral structural feature of the semiconductor device along at least one lateral direction, projecting an optical probe pulse on the semiconductor device, such that the probe pulse undergoes Brillouin scattering off the acoustic pulse within the target region, detecting a scattered component of the probe pulse to obtain a measured signal, and analyzing the measured signal to obtain a depth-dependence of at least one parameter characterizing the lateral structural feature.

    Depth profiling of semiconductor structures using picosecond ultrasonics
    10.
    发明授权
    Depth profiling of semiconductor structures using picosecond ultrasonics 有权

    公开(公告)号：US11519720B2

    公开(公告)日：2022-12-06

    申请号：US17068693

    申请日：2020-10-12

    Applicant: Applied Materials Israel, Ltd.

    Inventor： Ori Golani ,  Ido Almog

    IPC: G01B11/22 ,  G01B11/06

    Abstract: Disclosed herein is a method for depth-profiling of samples including a target region including a lateral structural feature. The method includes obtaining measured signals of the sample and analyzing thereof to obtain a depth-dependence of at least one parameter characterizing the lateral structural feature. The measured signals are obtained by repeatedly: projecting a pump pulse on the sample, thereby producing an acoustic pulse propagating within the target region; Brillouin-scattering a probe pulse off the acoustic pulse within the target region; and detecting a scattered component of the probe pulse to obtain a measured signal. In each repetition the respective probe pulse is scattered off the acoustic pulse at a respective depth within the target region, thereby probing the target region at a plurality of depths. A wavelength of the pump pulse is at least about two times greater than a lateral extent of the lateral structural feature.

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