公开(公告)号：US08311247B2

公开(公告)日：2012-11-13

申请号：US12617309

申请日：2009-11-12

申请人： Atsuhito Mizutani ,  Hideki Kojima ,  Katuhiro Makihata

发明人： Atsuhito Mizutani ,  Hideki Kojima ,  Katuhiro Makihata

IPC分类号： H04R25/00

CPC分类号： H04R1/04 ,  H01L24/45 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48137 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/49171 ,  H01L2224/85207 ,  H01L2924/1461 ,  H01L2924/3025 ,  H04R17/02 ,  Y10T29/42 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753

摘要： In order to miniaturize a piezoelectric body module, in which a rhombus-shaped electronic part 4 and a polygonal-shaped electronic part 5 are arranged on a rectangular substrate 2: the rhombus-shaped electronic part 4 is arranged on the substrate 2 such that a side 105 of the substrate 2 and a side 101 of the rhombus-shaped electronic part 4 are parallel to each other; and the polygonal-shaped electronic part 5 is arranged on the substrate 2 such that a side 104 of the rhombus-shaped electronic part 4 and a side 109 of the polygonal-shaped electronic part 5 are parallel to each other.

摘要翻译： 为了使矩形基板2上布置有菱形电子部件4和多边形电子部件5的压电体模块小型化，将菱形电子部件4配置在基板2上， 基板2的侧面105和菱形电子部件4的侧面101彼此平行; 并且多边形电子部件5布置在基板2上，使得菱形电子部件4的侧面104和多边形电子部件5的侧面109彼此平行。

公开(公告)号：US20090129612A1

公开(公告)日：2009-05-21

申请号：US11916615

申请日：2006-06-05

申请人： Yusuke Takeuchi ,  Hiroshi Ogura ,  Katuhiro Makihata

发明人： Yusuke Takeuchi ,  Hiroshi Ogura ,  Katuhiro Makihata

IPC分类号： H04R25/00 ,  H01L21/02

CPC分类号： H01G7/025 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/1461 ,  H01L2924/3025 ,  H04R19/005 ,  H04R19/016 ,  H04R31/00 ,  H04R2499/11 ,  H05K1/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A new electretization technology for a silicon microphone capable of reasonably electretizing a dielectric film of a condenser microphone formed by micromachining a silicon substrate and also capable of taking measures against variations in the microphone sensitivity caused by manufacturing variations and characteristic variations in parts is provided.A silicon microphone chip is completed and is implemented on an printed-circuit board and in this state, electretization processing is executed separately for a dielectric film in one silicon microphone chip by executing corona discharge using one needle electrode 51. More than one electretization is executed and the second or later electretization quantity is determined adaptively based on the actual measurement result of the microphone sensitivity, whereby electretization of the dielectric film is executed precisely and efficiently.

摘要翻译： 提供了一种用于硅麦克风的新的电化学技术，其能够合理地对通过微加工硅衬底形成的电容式麦克风的电介质膜进行电化，并且还能够对由制造变化和部件的特征变化引起的麦克风灵敏度的变化采取措施。 完成硅麦克风芯片并在印刷电路板上实现，并且在该状态下，通过使用一个针电极51执行电晕放电，在一个硅麦克风芯片中的电介质膜上分别执行电化处理。执行多于一次的电化学处理 并且基于麦克风灵敏度的实际测量结果自适应地确定第二或更晚的电化学量，从而精确且有效地执行介电膜的静电化。