公开(公告)号：US20180145001A1

公开(公告)日：2018-05-24

申请号：US15876833

申请日：2018-01-22

申请人： Renesas Electronics Corporation

发明人： Toshihiko Akiba ,  Bunji Yasumura ,  Masanao Sato ,  Hiromi Abe

IPC分类号： H01L21/66 ,  H01L23/00

CPC分类号： H01L22/32 ,  G01R31/26 ,  H01L22/14 ,  H01L22/20 ,  H01L22/30 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02313 ,  H01L2224/02371 ,  H01L2224/02373 ,  H01L2224/02381 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05012 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05187 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/06133 ,  H01L2224/06135 ,  H01L2224/10 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/4911 ,  H01L2224/49429 ,  H01L2224/49431 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/85951 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00012

摘要： Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.

公开(公告)号：US09754912B2

公开(公告)日：2017-09-05

申请号：US15181740

申请日：2016-06-14

申请人： Infineon Technologies AG

发明人： Khalil Hosseini ,  Matthias Stecher

IPC分类号： H01L21/44 ,  H01L23/00 ,  H01L23/532 ,  H01L21/56

CPC分类号： H01L24/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/81 ,  H01L24/85 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73257 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/05164 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/2075 ,  H01L2924/00012 ,  H01L2924/01006

摘要： An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.

公开(公告)号：US09704797B2

公开(公告)日：2017-07-11

申请号：US14118485

申请日：2011-05-18

申请人： Zhong Lu ,  Fen Yu ,  Chin Tien Chiu ,  Cheeman Yu ,  Fuqiang Xiao

发明人： Zhong Lu ,  Fen Yu ,  Chin Tien Chiu ,  Cheeman Yu ,  Fuqiang Xiao

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L25/065 ,  H01L25/00 ,  H01L21/768

CPC分类号： H01L23/49866 ,  H01L21/768 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/03013 ,  H01L2224/03614 ,  H01L2224/04042 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06145 ,  H01L2224/06155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48091 ,  H01L2224/48096 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48456 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78349 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2224/85948 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48095

摘要： A wire bonded structure for a semiconductor device is disclosed. The wire bonded structure comprises a bonding pad; and a continuous length of wire mutually diffused with the bonding pad, the wire electrically coupling the bonding pad with a first electrical contact and a second electrical contact different from the first electrical contact.

公开(公告)号：US20160307866A1

公开(公告)日：2016-10-20

申请号：US15194293

申请日：2016-06-27

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Rongwei Zhang ,  Abram Castro

IPC分类号： H01L23/00 ,  C08K7/14 ,  C08K3/36 ,  C08K3/10 ,  H01L23/495 ,  H01B3/40

CPC分类号： H01L24/48 ,  B29C45/0001 ,  B29C45/0046 ,  B29C45/14655 ,  B29C45/14836 ,  C08K3/10 ,  C08K3/36 ,  C08K7/14 ,  H01B3/40 ,  H01L21/56 ,  H01L21/565 ,  H01L23/295 ,  H01L23/4952 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/43 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4382 ,  H01L2224/43848 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48221 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/485 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/92247 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/1032 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/3862 ,  H01L2924/00014 ,  H01L2924/20752 ,  H01L2924/078 ,  H01L2924/00 ,  H01L2924/00012

摘要： The assembly of a chip (101) attached to a substrate (103) with wires (201) spanning from the chip to the substrate is loaded in a heated cavity (402) of a mold; the wire surfaces are coated with an adsorbed layer of molecules of a heterocyclic compound (302); a pressure chamber (404) of the mold is loaded with a solid pellet (410) of a packaging material including a polymerizable resin, the chamber being connected to the cavity; the vapor of resin molecules is allowed to spread from the chamber to the assembly inside the cavity during the time interval needed to heat the solid pellet for rendering it semi-liquid and to pressurize it through runners (403) before filling the mold cavity, whereby the resin molecules arriving in the cavity are cross-linked by the adsorbed heterocyclic compound molecules into an electrically insulating at least one monolayer of polymeric structures on the wire surfaces.

摘要翻译： 通过从芯片跨越到基板的导线（201）将附接到基板（103）的芯片（101）的组装装载到模具的加热空腔（402）中; 线表面涂覆有杂环化合物（302）的分子的吸附层; 模具的压力室（404）装载有包括可聚合树脂的包装材料的固体颗粒（410），该室连接到空腔; 在填充模具腔之前，在加热固体颗粒以使其半液体并通过流道（403）对其加压的时间间隔期间，允许树脂分子的蒸气从腔室扩散到腔内的组件，由此 通过被吸附的杂环化合物分子将到达空腔的树脂分子交联到电线表面上的绝缘的至少一个单层的聚合物结构。

公开(公告)号：US09466559B2

公开(公告)日：2016-10-11

申请号：US13229887

申请日：2011-09-12

申请人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

发明人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L23/485 ,  H01L21/66

CPC分类号： H01L24/05 ,  H01L21/565 ,  H01L22/32 ,  H01L23/485 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02205 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06183 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/46 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48158 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/4878 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4888 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/0665 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0002 ,  H01L2924/00015

摘要： In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).

摘要翻译： 在用于车辆用途的半导体集成电路器件中，半导体芯片上的铝焊盘和外部器件通过使用金线的引线接合彼此耦合以便于安装。 然而，这样的半导体集成电路器件在相对较高的温度（约150℃）下长时间使用铝和金之间的相互作用导致连接故障。 半导体集成电路器件可以包括作为器件的一部分的半导体芯片，经由阻挡金属膜设置在半导体芯片上的铝基焊盘上的电解镀金表面膜（金基金属镀膜），以及 用于在电镀表面膜和设置在布线板（布线基板）上的外部引线之间互连的金接合线（金基接合线）。

公开(公告)号：US09379033B2

公开(公告)日：2016-06-28

申请号：US14218048

申请日：2014-03-18

申请人： Infineon Technologies AG

发明人： Ralf Wombacher ,  Horst Theuss

IPC分类号： H01L23/29 ,  H01L23/055 ,  H01L23/00 ,  B81B7/00

CPC分类号： H01L23/291 ,  B81B7/0025 ,  H01L23/055 ,  H01L23/298 ,  H01L23/564 ,  H01L24/34 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48624 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48869 ,  H01L2224/73265 ,  H01L2224/8192 ,  H01L2224/81951 ,  H01L2224/83 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/37099

摘要： A sensor package is disclosed. One embodiment provides a sensor device having a carrier, a semiconductor sensor mounted on the carrier and an active surface. Contact elements are electrically connecting the carrier with the semiconductor sensor. A protective layer made of an inorganic material covers at least the active surface and the contact elements.

摘要翻译： 公开了一种传感器封装。 一个实施例提供了一种具有载体，安装在载体上的半导体传感器和有源表面的传感器装置。 接触元件将载体与半导体传感器电连接。 由无机材料制成的保护层至少覆盖活性表面和接触元件。

公开(公告)号：US09368447B2

公开(公告)日：2016-06-14

申请号：US13966320

申请日：2013-08-14

申请人： Infineon Technologies AG

发明人： Khalil Hosseini ,  Matthias Stecher

IPC分类号： H01L23/52 ,  H01L23/532 ,  H01L23/00

CPC分类号： H01L24/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/81 ,  H01L24/85 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73257 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/05164 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/2075 ,  H01L2924/00012 ,  H01L2924/01006

摘要： An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.

公开(公告)号：US20160035636A1

公开(公告)日：2016-02-04

申请号：US14876787

申请日：2015-10-06

申请人： Renesas Electronics Corporation

发明人： Toshihiko Akiba ,  Bunji Yasumura ,  Masanao Sato ,  Hiromi Abe

IPC分类号： H01L21/66 ,  H01L23/00

CPC分类号： H01L22/32 ,  G01R31/26 ,  H01L22/14 ,  H01L22/20 ,  H01L22/30 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02313 ,  H01L2224/02371 ,  H01L2224/02373 ,  H01L2224/02381 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05012 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05187 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/06133 ,  H01L2224/06135 ,  H01L2224/10 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/4911 ,  H01L2224/49429 ,  H01L2224/49431 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/85951 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K999/99 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.

摘要翻译： 提供了一种在半导体芯片上具有焊盘的半导体器件，形成在半导体芯片上并且在探针区域的焊盘上的开口部分和耦合区域的第一钝化膜，形成在焊盘上的第二钝化膜和第一钝化膜 钝化膜并且在耦合区域的焊盘上具有开口部分，以及重新布线层，形成在耦合区域和第二钝化膜上并电耦合到焊盘。 相对于耦合区域放置在半导体芯片的周边侧的探针区域的焊盘具有探针标记，并且重新布线层从半导体芯片的耦合区域延伸到中心侧。 本发明提供能够实现半导体器件的尺寸减小，特别是间距变窄的技术。

公开(公告)号：US09245954B2

公开(公告)日：2016-01-26

申请号：US13692101

申请日：2012-12-03

申请人： NEW JAPAN RADIO CO., LTD.

发明人： Yoshio Fujii

IPC分类号： H01L29/40 ,  H01L29/16 ,  H01L21/02 ,  H01L23/00

CPC分类号： H01L29/1608 ,  H01L21/02697 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/48458 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/48505 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/73265 ,  H01L2924/10272 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20757 ,  H01L2924/00015 ,  H01L2924/00012

摘要： An aluminum material can be used on a surface of the electrode of a semiconductor element, this aluminum layer need not be formed thick unnecessarily, a copper wire is bonded strongly to the semiconductor element irrespective of a diameter of the wire, and high heat resistance can be achieved. Silicon carbide (SiC) is used as a substrate of the semiconductor element 10, the titanium layer 20 and the aluminum layer 21 are formed as the electrode 15 on the silicon carbide substrate, and by a ball bonding or a wedge bonding of the copper wire 16 to the aluminum layer 21 of the electrode 15 while applying ultrasonic wave, the copper-aluminum compound layer 23 (Al4Cu9, AlCu or the like) is formed between the copper wire 16 and the titanium layer 20.

摘要翻译： 可以在半导体元件的电极的表面上使用铝材料，该铝层不需要不必要地形成，铜线与导线的直径无关地与半导体元件结合，并且高耐热性能 实现。 使用碳化硅（SiC）作为半导体元件10的基板，将钛层20和铝层21形成为碳化硅基板上的电极15，通过铜线的球接或楔形接合 16同时施加超声波，在铜线16和钛层20之间形成铜 - 铝化合物层23（Al4Cu9，AlCu等）。

公开(公告)号：US09245772B2

公开(公告)日：2016-01-26

申请号：US14328348

申请日：2014-07-10

申请人： STATS ChipPAC, Ltd.

发明人： JoungIn Yang ,  ChoongBin Yim ,  KeonTeak Kang ,  YoungChul Kim

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/56 ,  H01L23/14 ,  H01L23/31 ,  H01L23/498 ,  H01L25/03 ,  H01L23/00

CPC分类号： H01L21/561 ,  H01L21/486 ,  H01L23/147 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49827 ,  H01L24/02 ,  H01L24/28 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L25/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83192 ,  H01L2224/83805 ,  H01L2224/85205 ,  H01L2224/85411 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2224/13111 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/83205

摘要： A semiconductor package comprises a substrate, a first semiconductor die mounted to the substrate, and a first double side mold (DSM) internal stackable module (ISM) bonded directly to the first semiconductor die through a first adhesive. The first DSM ISM includes a first molding compound, and a second semiconductor die disposed in the first molding compound. The semiconductor package further comprises a first electrical connection coupled between the first semiconductor die and the substrate, and a second electrical connection coupled between the first DSM ISM and the substrate.

摘要翻译： 半导体封装包括衬底，安装到衬底的第一半导体管芯和通过第一粘合剂直接结合到第一半导体管芯的第一双面模具（DSM）内部可堆叠模块（ISM）。 第一DSM ISM包括第一模塑料和设置在第一模塑料中的第二半导体模。 半导体封装还包括耦合在第一半导体管芯和衬底之间的第一电连接以及耦合在第一DSM ISM和衬底之间的第二电连接。