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公开(公告)号：US4677231A
公开(公告)日：1987-06-30
申请号：US798249
申请日：1985-11-08
CPC分类号： C08G65/30 , Y02P20/582
摘要： A process for purifying a polyalkylene ether, which comprises mixing a polyalkylene ether or a mixture of a polyalkylene ether and an organic solvent containing a heteropoly acid and/or its salt with at least one solvent for purification selected from hydrocarbons having 3 to 15 carbon atoms or halogenated hydrocarbons having 1 to 15 carbon atoms and separating by precipitation the phase composed mainly of the heteropoly acid and/or its salt, and a process wherein the polyalkylene ether or a mixture of a polyalkylene ether and an organic solvent containing a heteropoly acid and/or its salt is brought into contact with a solid adsorbent capable of adsorbing the heteropoly acid and/or its salt in the presence of at least one solvent for purification as described above, either further after the separation according to the process described above, or in the state unseparated.According to the present invention, the heteropoly acid and/or its salt dissolved in the polyalkylene ether or the mixture of the polyalkylene ether with the organic solvent can be removed efficiently in the form which can be reused. Further after the treatment with an adsorbent, the concentration of heteropoly acids in the polyalkylene ether can be reduced to extremely lower.
摘要翻译： 一种纯化聚亚烷基醚的方法，其包括将聚亚烷基醚或含有杂多酸和/或其盐的有机溶剂的聚亚烷基醚或其混合物与选自具有3至15个碳原子的烃的至少一种纯化溶剂混合 或具有1至15个碳原子的卤代烃，并通过沉淀主要由杂多酸和/或其盐组成的相分离，以及其中聚亚烷基醚或聚亚烷基醚和含有杂多酸的有机溶剂的混合物和 /或其盐与固体吸附剂接触，所述固体吸附剂在至少一种如上所述的纯化溶剂存在下，可以在根据上述方法分离之后进一步吸附杂多酸和/或其盐，或 在状态未分离。 根据本发明，可以以可再利用的形式有效地除去溶解在聚亚烷基醚中的杂多酸和/或其盐或聚亚烷基醚与有机溶剂的混合物。 进一步用吸附剂处理后，聚亚烷基醚中杂多酸的浓度可以降低至极低。
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公开(公告)号：US4568775A
公开(公告)日：1986-02-04
申请号：US610741
申请日：1984-05-16
摘要： A process for producing a polyoxytetramethylene glycol or a copolymerized polyetherglycol by polymerizing tetrahydrofuran or a mixture of tetrahydrofuran with other cyclic ethers copolymerizable therewith, which comprises using a heteropoly-acid as a catalyst and permitting 0.1 to 15 mol of water per mol of the heteropolyacid to be present in the catalyst phase.The above-described polymer and copolymer are industrially useful polymers which can be used as the primary starting materials for polyurethanes to be used for a spandex and a synthetic leather, solvents, pressured fluids, etc.
摘要翻译： 通过聚合四氢呋喃或四氢呋喃与可与其共聚的其它环醚的混合物制备聚氧四亚甲基二醇或共聚的聚醚二醇的方法，其包括使用杂多酸作为催化剂，并允许每摩尔杂多酸0.1至15摩尔水 存在于催化剂阶段。 上述聚合物和共聚物是工业上有用的聚合物，其可以用作用于氨纶和合成革，溶剂，压力流体等的聚氨酯的主要起始材料。
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公开(公告)号：US4792627A
公开(公告)日：1988-12-20
申请号：US944354
申请日：1986-12-22
CPC分类号： C08G65/2666 , C08G18/4854 , C08G18/4858 , C08G65/20
摘要： A process for producing a polyether polyol with a content of 0.5 to 99.5% by weight of oxytetramethylene groups derived from tetrahydrofuran by copolymerizing tetrahydrofuran or a mixture of tetrahydrofuran and other cyclic ether copolymerizable therewith with a polyhydric alcohol having two or more hydroxyl groups per one molecule with the use of a heteropoly-acid and/or its salt as a catalyst, which comprises allowing 0.1 to 15 molecules of water per one heteropoly-anion to exist in the catalyst phase.The above-described polyether polyol is an industrially useful polymer which is a starting material for polyurethane to be used for spandex or a synthetic leather, etc.
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公开(公告)号：US4658065A
公开(公告)日：1987-04-14
申请号：US716656
申请日：1985-03-27
CPC分类号： C08G65/2666 , C08G18/4854 , C08G18/4858 , C08G65/20
摘要： A process for producing a polyether polyol with a content of 0.5 to 99.5% by weight of oxytetramethylene groups derived from tetrahydrofuran by copolymerizing tetrahydrofuran or a mixture of tetrahydrofuran and another cyclic ether copolymerizable therewith with a polyhydric alcohol having two or more hydroxyl groups per one molecule with the use of a heteropoly-acid and/or its salt as a catalyst, which comprises allowing 0.1 to 15 molecules of water per one heteropoly-anion to exist in the catalyst phase.The above-described polyether polyol is an industrially useful polymer which is a starting material for polyurethane to be used for spandex or a synthetic leather, etc.
摘要翻译： 通过将四氢呋喃或四氢呋喃和可与其共聚的其它环醚的混合物与每分子具有两个或更多个羟基的多元醇共聚合而制备含量为0.5至99.5重量％的由四氢呋喃衍生的氧四亚甲基基团的聚醚多元醇的方法 使用杂多酸和/或其盐作为催化剂，其包括在催化剂相中每1个杂多阴离子允许0.1至15分子的水。 上述聚醚多元醇是工业上有用的聚合物，其是用于氨纶或合成革等的聚氨酯的原料。
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公开(公告)号：US06541379B2
公开(公告)日：2003-04-01
申请号：US10115252
申请日：2002-04-04
申请人： Shoichiro Tonomura , Toyohiko Kuno
发明人： Shoichiro Tonomura , Toyohiko Kuno
IPC分类号： H01L2144
CPC分类号： H01L21/76879 , H01L21/288 , H01L21/2885 , H01L21/76807 , H01L23/53228 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Grooves and holes of high aspect ratio are filled completely and uniformly. After forming connection holes (3) and wiring grooves (4) in a silicon oxide film (2) which is formed on a silicon substrate (1), a TiN film (5) is formed over the entire surface of the semiconductor substrate and a Ti film (6) is formed on the region except for the connection holes (3) and the wiring grooves (4). Then, in a state where the connection holes (3) and the wiring groove (4) are dipped in a plating solution, a plating treatment is carried out under a deposition overvoltage higher than the deposition overvoltage of TiN to copper and lower than the deposition overvoltage of Ti to copper. Since plating is thus applied only to the portion where the TiN film (5) is exposed, namely, only to the portion of the connection holes (3) and the wiring grooves (4), the connection holes (3) and the wiring grooves (4) are filled with copper and when they are polished by a chemical and mechanical polishing method to form wirings, satisfactory copper wiring which are uniform and well filled can be obtained.
摘要翻译： 高宽比的槽和孔完全均匀地填充。 在形成在硅衬底（1）上的氧化硅膜（2）中形成连接孔（3）和布线槽（4）之后，在半导体衬底的整个表面上形成TiN膜（5） 在除了连接孔（3）和布线槽（4）之外的区域上形成Ti膜（6）。 然后，在将连接孔（3）和布线槽（4）浸渍在电镀液中的状态下，进行电镀处理，在比TiN向铜的沉积过电压高于沉积的沉积过电压下进行电镀处理 钛过电压到铜。 由于仅对TiN膜（5）露出的部分（即，仅连接孔3和布线槽4的部分）施加电镀，所以连接孔3和布线槽 （4）填充铜，当通过化学和机械抛光方法抛光以形成布线时，可以获得均匀且充分填充的令人满意的铜布线。
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公开(公告)号：US06384484B1
公开(公告)日：2002-05-07
申请号：US09380780
申请日：1999-09-09
申请人： Shoichiro Tonomura , Toyohiko Kuno
发明人： Shoichiro Tonomura , Toyohiko Kuno
IPC分类号： H01L2940
CPC分类号： H01L21/76879 , H01L21/288 , H01L21/2885 , H01L21/76807 , H01L23/53228 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Grooves and holes of high aspect ratio are filled completely and uniformly. After forming connection holes (3) and wiring grooves (4) in a silicon oxide film (2) which is formed on a silicon substrate (1), a TiN film (5) is formed over the entire surface of the semiconductor substrate and a Ti film (6) is formed on the region except for the connection holes (3) and the wiring grooves (4). Then, in a state where the connection holes (3) and the wiring groove (4) are dipped in a plating solution, a plating treatment is carried out under a deposition overvoltage higher than the deposition overvoltage of TiN to copper and lower than the deposition overvoltage of Ti to copper. Since plating is thus applied only to the portion where the TiN film (5) is exposed, namely, only to the portion of the connection holes (3) and the wiring grooves (4), the connection holes (3) and the wiring grooves (4) are filled with copper and when they are polished by a chemical and mechanical polishing method to form wirings, satisfactory copper wiring which are uniform and well filled can be obtained.
摘要翻译： 高宽比的槽和孔完全均匀地填充。 在形成在硅衬底（1）上的氧化硅膜（2）中形成连接孔（3）和布线槽（4）之后，在半导体衬底的整个表面上形成TiN膜（5） 在除了连接孔（3）和布线槽（4）之外的区域上形成Ti膜（6）。 然后，在将连接孔（3）和布线槽（4）浸渍在电镀液中的状态下，进行电镀处理，在比TiN向铜的沉积过电压高于沉积的沉积过电压下进行电镀处理 钛过电压到铜。 由于仅对TiN膜（5）露出的部分（即，仅连接孔3和布线槽4的部分）施加电镀，所以连接孔3和布线槽 （4）填充铜，当通过化学和机械抛光方法抛光以形成布线时，可以获得均匀且充分填充的令人满意的铜布线。
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7.发明授权
公开(公告)号：US6041096A
公开(公告)日：2000-03-21
申请号：US11046
申请日：1998-02-06
申请人： Ichiro Doi , Shoichiro Tonomura
发明人： Ichiro Doi , Shoichiro Tonomura
IPC分类号： G01N23/223
CPC分类号： G01N23/223 , G01N2223/076
摘要： A method and an apparatus for total reflection X-ray fluorescence spectroscopy which facilitates total reflection X-ray fluorescent spectroscopy of a sample having irregularities. Primary X-rays are emitted to a standard sample having a smooth surface at a plurality of irradiation angles, a characteristic X-ray spectrum is measured at each of irradiation angles, a characteristic X-ray intensity and a scattered X-ray intensity are determined therefrom, a calibration coefficient is determined in the form of a function of the scattered X-ray intensity by dividing a know quantity of an analyzed element of the standard sample by the determined characteristic X-ray intensity, a characteristic X-ray spectrum when a measured sample having irregularities on the surface is irradiated with primary X-rays at a reference irradiation angle smaller than a critical total reflection angle is measured a characteristic X-ray intensity and a scattered X-ray intensity for the analyzed element are determined therefrom, a calibration coefficient to be applied to the measured sample is determined on the basis of the determined scattered X-ray intensity, and the quantity of the analyzed element is calculated by multiplying the calibration coefficient with the characteristic X-ray intensity for the analyzed element.
摘要翻译： PCT No.PCT / JP96 / 02185 Sec。 371日期1998年2月6日 102（e）日期1998年2月6日PCT提交1996年8月2日PCT公布。 公开号WO97 / 06430 日期1997年2月20日一种全反射X射线荧光光谱法的方法和装置，其促进具有不规则性的样品的全反射X射线荧光光谱。 将主X射线发射到具有多个照射角度的光滑表面的标准样品，在每个照射角度测量特征X射线光谱，确定特征X射线强度和散射X射线强度 由此，通过将标准样品的分析元素的知识量除以所确定的特征X射线强度，特征X射线光谱，将其分解为散射X射线强度的函数的形式，确定校准系数 测量表面上具有不规则性的测量样品，以小于临界全反射角的参考照射角度照射初级X射线，测定分析元件的特征X射线强度和散射X射线强度， 基于确定的散射X射线强度和所分析的量来确定应用于测量样品的校准系数 通过将校准系数与分析元件的特征X射线强度相乘来计算元素。
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公开(公告)号：US5554449A
公开(公告)日：1996-09-10
申请号：US343999
申请日：1994-11-18
IPC分类号： G09F9/33 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/18 , H05B33/20 , H05B33/22 , H05B33/02
CPC分类号： H05B33/145 , G09F9/33 , H05B33/10 , H05B33/18 , H05B33/20 , H05B33/22 , Y10S428/917
摘要： A high luminance thin-film electroluminescent device comprising a phosphor layer comprising SrS as the host material and a luminous center. The phosphor layer is sandwiched between two insulating layers and two thin-film electrodes are provided on each side of the insulating layers. At least one of the electrodes is transparent, and the excitation spectrum of the phosphor layer exhibits a peak having a maximum value at a wavelength of about from 350 nm to 370 nm. Such a high luminance thin-film electroluminescent device can be prepared by annealing its phosphor layer comprising SrS as the host material at a temperature of at least 650 .degree. C. for at least one hour in an atmosphere of a sulfur-containing gas.
摘要翻译： 一种高亮度薄膜电致发光器件，包括以SrS为主体的荧光体层和发光中心。 荧光体层夹在两个绝缘层之间，并且在绝缘层的每一侧上设置两个薄膜电极。 电极中的至少一个是透明的，并且荧光体层的激发光谱在约350nm至370nm的波长处表现出具有最大值的峰。 这样的高亮度薄膜电致发光器件可以通过在含硫气体的气氛中在至少650℃的温度下将包含SrS作为主体材料的荧光体层退火至少1小时来制备。
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