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    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS
    2.
    发明申请
    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS 审中-公开

    公开(公告)号：US20190177844A1

    公开(公告)日：2019-06-13

    申请号：US16322999

    申请日：2017-08-23

    Applicant: BASF SE

    Inventor： Torben ADERMANN ,  Falko ABELS ,  Carolin LIMBURG ,  Hagen WILMER ,  Jan GERKENS ,  Sven SCHNEIDER

    IPC: C23C16/455 ,  C23C16/18 ,  C07F15/06

    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS
    3.
    发明申请
    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS 审中-公开

    公开(公告)号：US20190144999A1

    公开(公告)日：2019-05-16

    申请号：US16092577

    申请日：2017-04-10

    Applicant: BASF SE

    Inventor： Carolin LIMBURG ,  Daniel LOEFFLER ,  Hagen WILMER ,  Marc WALTER ,  Matthias REINERS

    IPC: C23C16/455 ,  H01L21/285 ,  C07F15/06 ,  C07F15/04

    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Lm—M—Xn (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R is independent of each other hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, p is 1, 2 or 3, M is Ni or Co, X is a σ-donating ligand which coordinates M, wherein if present at least one X is a ligand which coordinates M via a phosphor or nitrogen atom, m is 1 or 2 and n is 0 to 3.

    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS
    5.
    发明申请
    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS 审中-公开

    公开(公告)号：US20180320265A1

    公开(公告)日：2018-11-08

    申请号：US15775856

    申请日：2016-11-18

    Applicant: BASF SE

    Inventor： Torben ADERMANN ,  Daniel LOEFFLER ,  Carolin LIMBURG ,  Falko ABELS ,  Hagen WILMER ,  Monica GILL ,  Matthew GRIFFITHS ,  Sean BARRY

    IPC: C23C16/18 ,  C23C16/455 ,  C07F15/06

    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.

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