公开(公告)号：US20190177844A1

公开(公告)日：2019-06-13

申请号：US16322999

申请日：2017-08-23

Applicant: BASF SE

Inventor： Torben ADERMANN ,  Falko ABELS ,  Carolin LIMBURG ,  Hagen WILMER ,  Jan GERKENS ,  Sven SCHNEIDER

IPC: C23C16/455 ,  C23C16/18 ,  C07F15/06

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

公开(公告)号：US20160348243A1

公开(公告)日：2016-12-01

申请号：US15114666

申请日：2015-01-22

Applicant: BASF SE

Inventor： Ke XU ,  Christian SCHILDKNECHT ,  Jan SPIELMANN ,  Juergen FRANK ,  Florian BLASBERG ,  Daniel LOEFFLER ,  Martin GAERTNER ,  Sabine WEIGUNY ,  Kerstin SCHIERLE-ARNDT ,  Katharina FEDERSEL ,  Falko ABELS

IPC: C23C16/455 ,  C07F15/06 ,  C07F15/04 ,  B01J13/00 ,  C07F3/00

CPC classification number: C23C16/45553 ,  C07F3/00 ,  C07F3/003 ,  C07F15/045 ,  C07F15/065

Abstract: The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, R5, and R6 are independent of each other hydrogen, an alkyl group, or a trialkylsilyl group, n is an integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.

公开(公告)号：US20190144998A1

公开(公告)日：2019-05-16

申请号：US15779570

申请日：2016-11-29

Applicant: BASF SE

Inventor： Falko ABELS ,  David Dominique SCHWEINFURTH ,  Karl MATOS ,  Daniel LOEFFLER ,  Maraike AHLF ,  Florian BLASBERG ,  Thomas SCHAUB ,  Jan SPIELMANN ,  Axel KIRSTE ,  Boris GASPAR

IPC: C23C16/455 ,  C07F9/50 ,  C07F9/6584 ,  C23C16/06

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.

公开(公告)号：US20180044357A1

公开(公告)日：2018-02-15

申请号：US15557178

申请日：2016-03-02

Applicant: BASF SE

Inventor： Jan SPIELMANN ,  Falko ABELS ,  Florian BLASBERG ,  Katharina FEDERSEL ,  Christian SCHILDKNECHT ,  Daniel LOEFFLER ,  Torben ADERMANN ,  Juergen FRANK ,  Kerstin SCHIERLE-ARNDT ,  Sabine WEIGUNY

IPC: C07F7/08 ,  C23C16/455 ,  C23C16/18 ,  C09D1/00

CPC classification number: C07F7/0814 ,  C07D207/08 ,  C09D1/00 ,  C23C16/18 ,  C23C16/409 ,  C23C16/45553

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular the present invention relates to a process comprising bringing a com-pound of general formula (I) into the gaseous or aerosol state Ln-M-XmL=formula and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, are independent of each other hydrogen, an alkyl group, an aryl group, or a SiA3 group with A being an alkyl or aryl group, and at least two of R1, R2, R3, R4 are a SiA3 group, n is an integer from 1 to 4, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 4.

公开(公告)号：US20190003049A1

公开(公告)日：2019-01-03

申请号：US16063603

申请日：2017-01-17

Applicant: BASF SE

Inventor： Falko ABELS ,  Daniel LOEFFLER ,  Hagen WILMER ,  Robert WOLF ,  Christian ROEDL ,  Philipp BUESCHELBERGER

IPC: C23C16/448 ,  C07F15/06

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Ln . . . M . . . Xm (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.

公开(公告)号：US20180320265A1

公开(公告)日：2018-11-08

申请号：US15775856

申请日：2016-11-18

Applicant: BASF SE

Inventor： Torben ADERMANN ,  Daniel LOEFFLER ,  Carolin LIMBURG ,  Falko ABELS ,  Hagen WILMER ,  Monica GILL ,  Matthew GRIFFITHS ,  Sean BARRY

IPC: C23C16/18 ,  C23C16/455 ,  C07F15/06

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.