MICROFLUIDIC CHIP
    1.
    发明申请
    MICROFLUIDIC CHIP 审中-公开

    公开(公告)号:US20200338549A1

    公开(公告)日:2020-10-29

    申请号:US16768558

    申请日:2019-11-13

    IPC分类号: B01L3/00

    摘要: The present disclosure provides a microfluidic chip, including: first base substrate and a second base substrate opposite to each other; first electrode and second electrode between the first base substrate and the second base substrate and configured to control droplet to move between the first base substrate and the second base substrate according to voltages applied on the first electrode and the second electrode; light guide component configured to guide light propagating in the first base substrate to the droplet; shading component and detection component, shading component having light transmission regions spaced from each other, light transmission regions being configured to transmit light passing through the droplet to the detection component, wherein detection component is on second base substrate and is configured to obtain property of the droplet according to an intensity of the light passing through droplet and received from the light transmission regions.

    PATTERNING METHOD OF FILM, MICROFLUIDIC DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210129139A1

    公开(公告)日:2021-05-06

    申请号:US16639867

    申请日:2019-01-03

    IPC分类号: B01L3/00 B81C1/00

    摘要: A patterning method of a film is disclosed. The method including: providing a film including a first surface; forming n etching barrier layers on the first surface of the film, and n is an integer larger than or equal to 2; and performing n etching processes on the film to form a recessed structure on the first surface using the n etching barrier layers as masks, the recessed structure includes n bottom surfaces respectively having different depths. Two adjacent etching processes of the n etching processes include a previous etching process and a subsequent etching process, and after the previous etching process is completed, a part of the n etching barrier layers is removed to form a mask for the subsequent etching process; a material of the part of the n etching barrier layers which is removed is different from a material of the mask of the subsequent etching process.