公开(公告)号：US20160068384A1

公开(公告)日：2016-03-10

申请号：US14785338

申请日：2014-04-09

Applicant: Bo CUI ,  Ripon Kumar DEY

Inventor： Bo CUI ,  Ripon Kumar DEY

IPC: B81C1/00 ,  B81B1/00

CPC classification number: B81C1/00111 ,  B81B1/008 ,  B81B2201/12 ,  B81B2203/0361 ,  B81C2201/0132 ,  B81C2201/053 ,  B82Y30/00 ,  B82Y40/00 ,  G01Q70/12 ,  H01L21/3065 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/32139

Abstract: The invention provides a fabrication method of batch producing nano-scale structures, such as arrays of silicon pillars of high aspect ratio. The invention also relates to providing arrays of high aspect ratio silicon pillars fabricated using the improved fabrication method. The array of silicon pillars is fabricated from arrays of low aspect ratio pyramid-shaped structures. Mask formed from a hard material, such as a metal mask, is formed on top of each of the pyramid-shaped structures in a batch process. The pyramid-shaped structures are subsequently etched to remove substrate materials not protected by the hard masks, so that a high aspect ratio pillar or shaft is formed on the pyramid-shaped low aspect ratio base, resulting in an array of high aspect ratio silicon pillars.

Abstract translation: 本发明提供了批量生产纳米级结构的制造方法，例如高纵横比的硅柱阵列。 本发明还涉及使用改进的制造方法制造的高纵横比硅柱阵列。 硅柱阵列由低纵横比金字塔形结构的阵列制成。 由金属掩模等硬质材料形成的掩模在分批处理中形成在每个金字塔形结构的顶部上。 金字塔形结构随后被蚀刻以除去未被硬掩模保护的衬底材料，从而在金字塔形的低纵横比基底上形成高纵横比的柱或轴，导致高纵横比硅柱的阵列 。

公开(公告)号：US20180217182A1

公开(公告)日：2018-08-02

申请号：US15885233

申请日：2018-01-31

Applicant: Shuo ZHENG ,  Babak Baradaran SHOKOUHI ,  Mengmeng DENG ,  Bo CUI

Inventor： Shuo ZHENG ,  Babak Baradaran SHOKOUHI ,  Mengmeng DENG ,  Bo CUI

IPC: G01Q60/38 ,  G01Q70/06

CPC classification number: G01Q60/38 ,  G01Q70/06 ,  G01Q70/10

Abstract: A fabrication method for the fabrication of special nano-scale structures, such as AFM probe tip(s) at the edge of a silicon and/or silicon nitride platform, called the cantilever. An array of these special AFM probes with the AFM tip structure located at the edge is fabricated from an array of regular AFM probes where the AFM tip structure may not originally have been located at the edge of the cantilever. A hard mask is formed on the probe's tip from a hard material, such as a metal mask, where more than one side of the tip could be uncovered. The non-covered side(s) of the probe tip structure(s) are subsequently etched to remove substrate materials, so that a sharp shaft (tip) is formed on the edge of the cantilever, when the process is done in a batch manner it results in an array of such AFM probe tips.