公开(公告)号：US20030119220A1

公开(公告)日：2003-06-26

申请号：US10284048

申请日：2002-10-29

Applicant: Boston MicroSystems, Inc.

Inventor： Richard Mlcak ,  Dharanipal Doppalapudi ,  Harry L. Tuller

IPC: H01L021/00

CPC classification number: B81B3/0089 ,  B81B3/0094 ,  B81B2201/06 ,  B81B2203/0127 ,  H01L41/094 ,  H01L41/18 ,  H01L41/316 ,  H01L41/331 ,  H01L41/332

Abstract: A micromechanical device includes a single crystal micromachined micromechanical structure. At least a portion of the micromechanical structure is capable of performing a mechanical motion. A piezoelectric epitaxial layer covers at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion. The micromechanical structure and piezoelectric epitaxial layer are composed of different materials. At least one electrically conducting layer is formed to cover at least part of the piezoelectric epitaxial layer.

Abstract translation: 微机械装置包括单晶微加工微机械结构。 微机械结构的至少一部分能够执行机械运动。 压电外延层覆盖能够执行机械运动的微机械结构的所述部分的至少一部分。 微机械结构和压电外延层由不同的材料组成。 形成至少一个导电层以覆盖至少部分压电外延层。

公开(公告)号：US20020068488A1

公开(公告)日：2002-06-06

申请号：US09940064

申请日：2001-08-27

Applicant: Boston MicroSystems, Inc.

Inventor： Harry L. Tuller ,  Marlene A. Spears ,  Richard Mlcak

IPC: H01L029/06 ,  H01R004/28

CPC classification number: H01L29/45 ,  H01L21/048 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/47

Abstract: An electrical contact for a silicon carbide component comprises a material that is in thermodynamic equilibrium with silicon carbide. The electrical contact is typically formed of Ti3SiC2 that is deposited on the silicon carbide component.

Abstract translation: 用于碳化硅部件的电接触包括与碳化硅处于热力学平衡的材料。 电接触通常由沉积在碳化硅部件上的Ti 3 SiC 2形成。

公开(公告)号：US20030193073A1

公开(公告)日：2003-10-16

申请号：US10123900

申请日：2002-04-16

Applicant: Boston MicroSystems, Inc.

Inventor： Harry L. Tuller ,  Richard Mlcak

IPC: H01L029/76

CPC classification number: G01N27/12

Abstract: A sensor including a p-n junction for subjecting under a reverse electrical bias. A conductive layer is formed across the p-n junction for providing an alternative conductive path across the p-n junction. The conductivity of the conductive layer in the presence of a selected substance in an atmosphere is different than in the absence of the selected substance, wherein the conductivity of the conductive layer is indicative of the presence or absence of the selected substance.

Abstract translation: 一种传感器，包括用于在反向电偏压下进行的p-n结。 导电层跨越p-n结形成，以提供穿过p-n结的替代导电路径。 在选择的物质存在下，导电层在大气中的电导率不同于不存在所选物质的导电层，其中导电层的导电性指示所选物质的存在或不存在。

公开(公告)号：US20020070841A1

公开(公告)日：2002-06-13

申请号：US09879692

申请日：2001-06-12

Applicant: Boston MicroSystems, Inc.

Inventor： Dharanipal Doppalapudi ,  Theodore D. Moustakas ,  Richard Mlcak ,  Harry L. Tuller

IPC: G01L001/22

CPC classification number: H01L29/155 ,  G01L1/2293 ,  Y10T29/49099 ,  Y10T29/49101

Abstract: A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.