公开(公告)号：US20210296428A1

公开(公告)日：2021-09-23

申请号：US17263285

申请日：2019-11-11

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Hongfeng Jin

IPC: H01L49/02 ,  H01L23/522

Abstract: An MIM capacitor and a manufacturing method therefor. The manufacturing method comprises: providing a semiconductor substrate, and forming a first metal layer on the semiconductor substrate; forming an anti-reflection layer on the first metal layer; performing photoetching and etching on the first metal layer and the anti-reflection layer so as to define an MIM capacitor region, wherein the first metal layer in the MIM capacitor region serves as a lower electrode plate of the MIM capacitor, and the anti-reflection layer in the MIM capacitor region serves as a dielectric layer of the MIM capacitor; and forming an upper electrode plate of the MIM capacitor on the anti-reflection layer in the MIM capacitor region.

公开(公告)号：US11158737B2

公开(公告)日：2021-10-26

申请号：US16644856

申请日：2018-08-03

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Huajun Jin ,  Guipeng Sun ,  Hongfeng Jin

IPC: H01L29/78 ,  H01L29/66

Abstract: Provided in the present invention are an LDMOS component, a manufacturing method therefor, and an electronic device, comprising: a semiconductor substrate (100); a drift area (101) provided in the semiconductor substrate; a gate electrode structure (103) provided on a part of the surface of the semiconductor substrate and covers a part of the surface of the drift area; a source electrode (1052) and a drain electrode (1051) respectively provided in the semiconductor substrate on either side of the gate electrode structure, where the drain electrode is provided in the drift area and is separated from the gate electrode structure; a metal silicide barrier layer (106) covering the surface of at least a part of the semiconductor substrate between the gate electrode structure and the drain electrode; and a first contact hole (1081) provided on the surface of at least a part of the metal silicide barrier layer.

公开(公告)号：US11476324B2

公开(公告)日：2022-10-18

申请号：US17263285

申请日：2019-11-11

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Hongfeng Jin

IPC: H01L49/02 ,  H01L23/522 ,  H01L21/311

Abstract: An MIM capacitor and a manufacturing method therefor. The manufacturing method comprises: providing a semiconductor substrate, and forming a first metal layer on the semiconductor substrate; forming an anti-reflection layer on the first metal layer; performing photoetching and etching on the first metal layer and the anti-reflection layer so as to define an MIM capacitor region, wherein the first metal layer in the MIM capacitor region serves as a lower electrode plate of the MIM capacitor, and the anti-reflection layer in the MIM capacitor region serves as a dielectric layer of the MIM capacitor; and forming an upper electrode plate of the MIM capacitor on the anti-reflection layer in the MIM capacitor region.