公开(公告)号：US20240282765A1

公开(公告)日：2024-08-22

申请号：US18567101

申请日：2022-06-15

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Lu HUANG ,  Yong HUANG ,  Yan YAN ,  Wanyi ZHOU ,  Lin WU ,  Cheng ZHOU ,  Haili SHI

IPC: H01L27/02 ,  H01L29/74

CPC classification number: H01L27/0262 ,  H01L27/0274 ,  H01L29/7436

Abstract: The present disclosure provides a GGNMOS transistor structure, an ESD protection device, and an ESD protection circuit. The GGNMOS transistor structure can increase a capability of the ESD protection device to discharge an ESD current per unit size under the action of a P-N-P-N parasitic thyristor formed by an N-potential well, a P-type heavily doped region, and an N-type heavily doped region; the GGNMOS transistor structure can limit a transient peak current of ESD under the action of an equivalent resistor formed by an N-potential well, so that respective GGNMOS transistors of the ESD protection device can conduct uniformly, improving the reliability of the ESD protection circuit.

公开(公告)号：US20210240898A1

公开(公告)日：2021-08-05

申请号：US17053550

申请日：2019-08-15

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Nan ZHANG ,  Jing ZHOU ,  Hao WANG ,  Zhan GAO ,  Maoqian ZHU ,  Cheng ZHOU ,  Zhijin LI ,  Lin WU ,  Shuming GUO ,  Yong HUANG

IPC: G06F30/367 ,  G06F30/392

Abstract: The present application relates to a resistance simulation method for a power device, comprising: establishing an equivalent resistance model of a power device, wherein the connection relationship of N fingers is equivalent to N resistors Rb connected in parallel, input ends of adjacent resistors Rb are connected by means of a resistor Ra, output ends of adjacent resistors Rb are connected by means of a resistor Rc, R a = 1 N ⁢ R 0 , R c = 1 N ⁢ R 1 , and Rb=RDEV*N+RS+RD, wherein R0 and R1 are respectively resistances of a source metal strip and a drain metal strip, Rs is a metal resistor of a first intermediate layer connecting one source region to the source metal strip, RD is a metal resistor of a second intermediate layer connecting one drain region to the drain metal strip, and RDEV is the channel resistance of the power device; and calculating the resistance of the equivalent resistance model as the resistance of the power device.