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    Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity
    1.
    发明申请
    Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity 有权
    用于制造具有高光敏性的具有微透镜的CMOS图像传感器的方法

    公开(公告)号：US20060019426A1

    公开(公告)日：2006-01-26

    申请号：US11242817

    申请日：2005-10-03

    申请人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

    发明人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

    摘要： The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

    摘要翻译： 采用CMOS图像传感器的制造方法，通过在微透镜之间采用开口来防止相邻微透镜之间的桥接现象。 该方法包括以下步骤：制备其中通过预定工艺获得的包括隔离区和其中的光电二极管的半导体衬底; 依次形成在半导体衬底上的层间电介质（ILD），金属互连和钝化层; 在所述钝化层上形成具有多个滤色器的滤色器阵列; 通过使用正性光致抗蚀剂或负型光致抗蚀剂在滤色器阵列上形成覆盖层（OCL）; 通过使用预定的掩模图案化OCL来在OCL中形成开口; 并在图案化的OCL上形成圆顶型微透镜。

    Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity
    2.
    发明授权
    Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity 有权
    用于制造具有高光敏性的具有微透镜的CMOS图像传感器的方法

    公开(公告)号：US07670867B2

    公开(公告)日：2010-03-02

    申请号：US11242817

    申请日：2005-10-03

    申请人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

    发明人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

    摘要： The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

    摘要翻译： 采用CMOS图像传感器的制造方法，通过在微透镜之间采用开口来防止相邻微透镜之间的桥接现象。 该方法包括以下步骤：制备其中通过预定工艺获得的包括隔离区和其中的光电二极管的半导体衬底; 依次形成在半导体衬底上的层间电介质（ILD），金属互连和钝化层; 在所述钝化层上形成具有多个滤色器的滤色器阵列; 通过使用正性光致抗蚀剂或负型光致抗蚀剂在滤色器阵列上形成覆盖层（OCL）; 通过使用预定的掩模图案化OCL来在OCL中形成开口; 并在图案化的OCL上形成圆顶型微透镜。

    Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity
    3.
    发明授权
    Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity 有权
    用于制造具有高光敏性的具有微透镜的CMOS图像传感器的方法

    公开(公告)号：US06979588B2

    公开(公告)日：2005-12-27

    申请号：US10737227

    申请日：2003-12-16

    申请人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

    发明人： Chang-Young Jeong ,  Dae-Ung Shin ,  Hong-Ik Kim

    IPC分类号： G02B3/00 ,  H01L21/00 ,  H01L27/00 ,  H01L27/14 ,  H01L27/146 ,  H01L31/062 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374

    CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

    摘要： The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

    摘要翻译： 采用CMOS图像传感器的制造方法，通过在微透镜之间采用开口来防止相邻微透镜之间的桥接现象。 该方法包括以下步骤：制备其中通过预定工艺获得的包括隔离区和其中的光电二极管的半导体衬底; 依次形成在半导体衬底上的层间电介质（ILD），金属互连和钝化层; 在所述钝化层上形成具有多个滤色器的滤色器阵列; 通过使用正性光致抗蚀剂或负型光致抗蚀剂在滤色器阵列上形成覆盖层（OCL）; 通过使用预定的掩模图案化OCL来在OCL中形成开口; 并在图案化的OCL上形成圆顶型微透镜。

    Image sensor having microlenses and high photosensitivity
    4.
    发明授权
    Image sensor having microlenses and high photosensitivity 有权
    具有微透镜和高感光度的图像传感器

    公开(公告)号：US07932546B2

    公开(公告)日：2011-04-26

    申请号：US12606595

    申请日：2009-10-27

    申请人： Chang-Young Jeong ,  Dai-Ung Shin ,  Hong-Ik Kim

    发明人： Chang-Young Jeong ,  Dai-Ung Shin ,  Hong-Ik Kim

    IPC分类号： H01L29/66

    CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

    摘要： The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

    摘要翻译： 采用CMOS图像传感器的制造方法，通过在微透镜之间采用开口来防止相邻微透镜之间的桥接现象。 该方法包括以下步骤：制备其中通过预定工艺获得的包括隔离区和其中的光电二极管的半导体衬底; 依次形成在半导体衬底上的层间电介质（ILD），金属互连和钝化层; 在所述钝化层上形成具有多个滤色器的滤色器阵列; 通过使用正性光致抗蚀剂或负型光致抗蚀剂在滤色器阵列上形成覆盖层（OCL）; 通过使用预定的掩模图案化OCL来在OCL中形成开口; 并在图案化的OCL上形成圆顶型微透镜。

    Method for Manufacturing CMOS Image Sensor Having Microlens Therein with High Photosensitivity
    5.
    发明申请
    Method for Manufacturing CMOS Image Sensor Having Microlens Therein with High Photosensitivity 有权
    制造具有高光敏度的微透镜的CMOS图像传感器的方法

    公开(公告)号：US20100044819A1

    公开(公告)日：2010-02-25

    申请号：US12606595

    申请日：2009-10-27

    申请人： Chang-Young Jeong ,  Dai-Ung Shin ,  Hong-Ik Kim

    发明人： Chang-Young Jeong ,  Dai-Ung Shin ,  Hong-Ik Kim

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

    摘要： The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

    摘要翻译： 采用CMOS图像传感器的制造方法，通过在微透镜之间采用开口来防止相邻微透镜之间的桥接现象。 该方法包括以下步骤：制备其中通过预定工艺获得的包括隔离区和其中的光电二极管的半导体衬底; 依次形成在半导体衬底上的层间电介质（ILD），金属互连和钝化层; 在所述钝化层上形成具有多个滤色器的滤色器阵列; 通过使用正性光致抗蚀剂或负型光致抗蚀剂在滤色器阵列上形成覆盖层（OCL）; 通过使用预定的掩模图案化OCL来在OCL中形成开口; 并在图案化的OCL上形成圆顶型微透镜。

    Method for manufacturing CMOS image sensor
    9.
    发明授权
    Method for manufacturing CMOS image sensor 有权
    CMOS图像传感器的制造方法

    公开(公告)号：US07163832B2

    公开(公告)日：2007-01-16

    申请号：US10983990

    申请日：2004-11-08

    申请人： Hong-Ik Kim

    发明人： Hong-Ik Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14685

    摘要： The present invention discloses a method for manufacturing an image sensor which makes the boundaries between microlenses clear by forming a guide layer in advance and can increase the focal distance of light and the quantity of light by forming the spheres of the microlenses to have a constant height.

    摘要翻译： 本发明公开了一种用于制造图像传感器的方法，其通过预先形成引导层使微透镜之间的边界清晰，并且可以通过将微透镜的球体形成为具有恒定高度来增加光的焦距和光量 。