公开(公告)号：US20130020494A1

公开(公告)日：2013-01-24

申请号：US13544105

申请日：2012-07-09

申请人： Masato Ofuji ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

发明人： Masato Ofuji ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

IPC分类号： H01L27/146

CPC分类号： H04N5/3765 ,  H01L27/14609 ,  H01L27/14663 ,  H01L27/14692 ,  H04N5/32

摘要： A detection apparatus includes a driving circuit unit in which a plurality of unit circuits each including a first circuit that supplies conducting voltage of a switch element of a pixel based on voltage included in a clock signal to a driving wire in accordance with an initiation signal and a second circuit that supplies non-conducting voltage of the switch element to the driving wire in accordance with a termination signal are provided for the plurality of corresponding driving wires and a control unit that supplies the clock signal to the driving circuit unit. The control unit supplies control voltage to the plurality of unit circuits, and each of the plurality of unit circuits further includes a third circuit that continues to supply the non-conducting voltage to the corresponding driving wire in accordance with the control voltage.

摘要翻译： 检测装置包括驱动电路单元，其中多个单元电路各自包括第一电路，该第一电路根据启动信号将基于时钟信号中包含的电压的像素的开关元件的导通电压提供给驱动线， 为多个相应的驱动线提供了根据终止信号将开关元件的非导通电压提供给驱动线的第二电路，以及将时钟信号提供给驱动电路单元的控制单元。 控制单元向多个单元电路提供控制电压，并且多个单元电路中的每一个还包括第三电路，其继续根据控制电压向相应的驱动线提供非导通电压。

公开(公告)号：US09190437B2

公开(公告)日：2015-11-17

申请号：US13610472

申请日：2012-09-11

申请人： Jun Kawanabe ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

发明人： Jun Kawanabe ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

IPC分类号： H01J40/14 ,  H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14665

摘要： A detection apparatus includes a transistor disposed on a substrate, a conversion element disposed above the transistor and connected to the transistor, a capacitor connected in parallel with conversion element to the transistor, the capacitor including, between the substrate and the conversion element, an ohmic contact part connected to the conversion element, a semiconductor part connected to the ohmic contact part, and an electrically conductive part disposed at a location opposite to the semiconductor part and the ohmic contact part via an insulating layer, and a potential supplying unit configured to selectively supply a first electric potential to the electrically conductive part to accumulate charge carriers in the semiconductor part and a second electric potential to the electrically conductive part to deplete the semiconductor part. The detection apparatus configured in the above-described manner is capable of controlling pixel capacitance thereby achieving a high signal-to-noise ratio.

摘要翻译： 检测装置包括设置在基板上的晶体管，设置在晶体管上方并连接到晶体管的转换元件，与转换元件并联连接到晶体管的电容器，电容器包括在基板和转换元件之间的欧姆 连接到转换元件的接触部分，连接到欧姆接触部分的半导体部分和经由绝缘层设置在与半导体部分和欧姆接触部分相对的位置处的导电部分，以及电位供给单元，被配置为选择性地 向导电部分提供第一电位，以将半导体部件中的电荷载流子积累，并且向导电部件累积第二电位以耗尽半导体部件。 以上述方式配置的检测装置能够控制像素电容，从而实现高的信噪比。

公开(公告)号：US20120306041A1

公开(公告)日：2012-12-06

申请号：US13477401

申请日：2012-05-22

申请人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

发明人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

IPC分类号： H01L31/0224

CPC分类号： H01L27/1461 ,  H01L27/1462 ,  H01L27/14676 ,  H01L27/14685 ,  H01L27/14692

摘要： In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.

摘要翻译： 在制造包括衬底上的像素的检测装置的方法中，每个像素包括开关元件和包括电极上的杂质半导体层的转换元件，该电容器设置在开关元件上方并且每像素隔离开关元件和 电极被连接在形成在保护层和层间绝缘层中的接触孔中，所述接触孔设置在开关元件和电极之间，该方法包括在与层间绝缘层接触的电极之间的层间绝缘层上形成绝缘构件 形成覆盖所述绝缘构件和所述电极的杂质半导体膜，以及形成覆盖所述电极的一部分的正投影像的所述保护层的区域的覆盖层，所述部分包括所述触点内的电平差 孔。

公开(公告)号：US20120305785A1

公开(公告)日：2012-12-06

申请号：US13477472

申请日：2012-05-22

申请人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

发明人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

IPC分类号： G01T1/24 ,  H01L27/14 ,  H01L31/18

CPC分类号： H01L27/14687 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14676

摘要： In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.

摘要翻译： 在制造包括排列在基板上的多个像素的检测装置的方法中，每个像素包括开关元件和转换元件，转换元件包括设置在开关元件上方的电极上的杂质半导体层，该杂质半导体层被隔离 并且由连接到开关元件的透明导电氧化物制成，并且还包括设置在开关元件和电极之间的由有机材料制成并且覆盖开关的层间绝缘层 元件，该方法包括各自由无机材料制成的绝缘构件，并设置成覆盖与层间绝缘层接触的相邻的两个电极之间的层间绝缘层，并且形成覆盖绝缘构件和电极的杂质半导体膜，并成为 杂质半导体层。

公开(公告)号：US08866093B2

公开(公告)日：2014-10-21

申请号：US13477472

申请日：2012-05-22

申请人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

发明人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

IPC分类号： G01T1/24 ,  H01L27/146

CPC分类号： H01L27/14687 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14676

摘要： In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.

摘要翻译： 在制造包括排列在基板上的多个像素的检测装置的方法中，每个像素包括开关元件和转换元件，转换元件包括设置在开关元件上方的电极上的杂质半导体层，该杂质半导体层被隔离 并且由连接到开关元件的透明导电氧化物制成，并且还包括设置在开关元件和电极之间的由有机材料制成并且覆盖开关的层间绝缘层 元件，该方法包括各自由无机材料制成的绝缘构件，并设置成覆盖与层间绝缘层接触的相邻的两个电极之间的层间绝缘层，并且形成覆盖绝缘构件和电极的杂质半导体膜，并成为 杂质半导体层。

公开(公告)号：US20130075621A1

公开(公告)日：2013-03-28

申请号：US13609755

申请日：2012-09-11

申请人： Minoru Watanabe ,  Chiori Mochizuki ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

发明人： Minoru Watanabe ,  Chiori Mochizuki ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

IPC分类号： G01T1/17

CPC分类号： H01L27/14663

摘要： A detection apparatus includes a conversion element; a transistor which includes a semiconductor layer including a first channel region and a second channel region, a first gate electrode, and a second gate electrode; a first drive wiring which is connected to the first gate electrode; a second drive wiring which is connected to the second gate electrode; a first conduction voltage supply unit which supplies the first conduction voltage to the first driving wiring; a second conduction voltage supply unit which supplies the second conduction voltage to the second driving wiring; and a selection unit which selects any one of a first connection between the second drive wiring and the first conduction voltage supply unit and a second connection between the second drive wiring and the second conduction voltage supply unit.

摘要翻译： 检测装置包括转换元件; 包括包括第一沟道区和第二沟道区的半导体层的晶体管，第一栅电极和第二栅电极; 连接到第一栅电极的第一驱动布线; 连接到第二栅电极的第二驱动布线; 向第一驱动配线供给第一导通电压的第一导通电压供给部; 第二导通电压提供单元，其向第二驱动布线提供第二导电电压; 以及选择单元，其选择第二驱动布线和第一导电电压提供单元之间的第一连接中的任一个以及第二驱动布线和第二导电电压提供单元之间的第二连接。

公开(公告)号：US20120154353A1

公开(公告)日：2012-06-21

申请号：US13323187

申请日：2011-12-12

申请人： Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

发明人： Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

IPC分类号： G09G5/00

CPC分类号： H01L27/14663 ,  G09G3/3659

摘要： A matrix substrate which realizes high operation speed and high reliability and which is capable of obtaining a high-quality image while the number of connection terminals is limited is provided. The matrix substrate includes pixels arranged in a matrix, N driving lines arranged in a row direction, P connection terminals where P is less than N, a demultiplexer which is disposed between the connection terminals and the driving lines and which includes first polycrystalline semiconductor TFTs and first connection terminals. The demultiplexer further includes second polycrystalline semiconductor TFTs and the second control lines used to maintain the driving lines to have non-selection voltages which bring the pixels to non-selection states between one of the connection terminals and two or more of the driving lines.

摘要翻译： 提供实现高操作速度和高可靠性并且能够在连接端子数量受限的同时获得高质量图像的矩阵基板。 矩阵基板包括排列成矩阵的像素，排列成行方向的N个驱动线，P小于N的P个连接端子，配置在连接端子与驱动线之间并且包括第一多晶半导体TFT的多路分离器， 第一连接端子。 解复用器还包括第二多晶半导体TFT和第二控制线，其用于将驱动线保持为具有非选择电压，这些非选择电压将像素连接到一个连接端子和两个或更多个驱动线之间的非选择状态。

公开(公告)号：US08508011B2

公开(公告)日：2013-08-13

申请号：US13405639

申请日：2012-02-27

申请人： Hiroshi Wayama ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi

发明人： Hiroshi Wayama ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi

IPC分类号： H01L31/00

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14665 ,  H01L27/14683

摘要： A semiconductor apparatus including a substrate, a pixel array on the substrate, first and second conductive pads between which the substrate locates is provided. The apparatus also comprises an insulating layer arranged between the substrate and the first conductive pad; a third conductive pad arranged between the substrate and the insulating layer; a first conductive member which passes through the insulating layer and connects the first and third conductive pads to each other; and a second conductive member which passes through the substrate and connects the second and third conductive pads to each other. The pixel array further comprises a conductive line connected to circuit elements included in pixels aligned in a row or column direction. The first conductive pad is connected to the conductive line in an interval between the pixels.

摘要翻译： 提供了一种半导体装置，其包括基板，基板上的像素阵列，设置有基板的第一和第二导电焊盘。 该设备还包括布置在基板和第一导电焊盘之间的绝缘层; 布置在所述基板和所述绝缘层之间的第三导电焊盘; 第一导电构件，其穿过绝缘层并将第一和第三导电焊盘彼此连接; 以及第二导电构件，其穿过基板并将第二和第三导电焊盘彼此连接。 像素阵列还包括连接到包括在以行或列方向排列的像素中的电路元件的导线。 第一导电焊盘以像素之间的间隔连接到导电线。

公开(公告)号：US20120235270A1

公开(公告)日：2012-09-20

申请号：US13405639

申请日：2012-02-27

申请人： Hiroshi Wayama ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi

发明人： Hiroshi Wayama ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi

IPC分类号： H01L31/0224

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14665 ,  H01L27/14683

摘要： A semiconductor apparatus including a substrate, a pixel array on the substrate, first and second conductive pads between which the substrate locates is provided. The apparatus also comprises an insulating layer arranged between the substrate and the first conductive pad; a third conductive pad arranged between the substrate and the insulating layer; a first conductive member which passes through the insulating layer and connects the first and third conductive pads to each other; and a second conductive member which passes through the substrate and connects the second and third conductive pads to each other. The pixel array further comprises a conductive line connected to circuit elements included in pixels aligned in a row or column direction. The first conductive pad is connected to the conductive line in an interval between the pixels.

摘要翻译： 提供了一种半导体装置，其包括基板，基板上的像素阵列，设置有基板的第一和第二导电焊盘。 该设备还包括布置在基板和第一导电焊盘之间的绝缘层; 布置在所述基板和所述绝缘层之间的第三导电焊盘; 第一导电构件，其穿过绝缘层并将第一和第三导电焊盘彼此连接; 以及第二导电构件，其穿过基板并将第二和第三导电焊盘彼此连接。 像素阵列还包括连接到包括在以行或列方向排列的像素中的电路元件的导线。 第一导电焊盘以像素之间的间隔连接到导电线。

公开(公告)号：US08822939B2

公开(公告)日：2014-09-02

申请号：US13323187

申请日：2011-12-12

申请人： Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

发明人： Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

IPC分类号： G01G5/00 ,  H01L27/146 ,  G09G3/36

CPC分类号： H01L27/14663 ,  G09G3/3659

摘要： A matrix substrate which realizes high operation speed and high reliability and which is capable of obtaining a high-quality image while the number of connection terminals is limited is provided. The matrix substrate includes pixels arranged in a matrix, N driving lines arranged in a row direction, P connection terminals where P is less than N, a demultiplexer which is disposed between the connection terminals and the driving lines and which includes first polycrystalline semiconductor TFTs and first connection terminals. The demultiplexer further includes second polycrystalline semiconductor TFTs and the second control lines used to maintain the driving lines to have non-selection voltages which bring the pixels to non-selection states between one of the connection terminals and two or more of the driving lines.

摘要翻译： 提供实现高操作速度和高可靠性并且能够在连接端子数量受限的同时获得高质量图像的矩阵基板。 矩阵基板包括排列成矩阵的像素，排列成行方向的N个驱动线，P小于N的P个连接端子，配置在连接端子与驱动线之间并且包括第一多晶半导体TFT的多路分离器， 第一连接端子。 解复用器还包括第二多晶半导体TFT和第二控制线，其用于将驱动线保持为具有非选择电压，这些非选择电压将像素连接到一个连接端子和两个或更多个驱动线之间的非选择状态。