Abstract:
A computer-implemented system and method for verifying access to a network account are provided. A first user communication portal is associated with a user network account. A request to access the user network account is received from a second user communication portal. Security criteria related to the second user communication portal is determined. Access to the user network account is enabled upon receipt of a communication associated with the first user communication portal when the security criteria is of a predetermined value.
Abstract:
An apparatus is capable of collapsing into a smaller configuration is disclosed. The apparatus comprises a first sidewall and a second sidewall interconnected by a bottom wall, a front wall, a rear wall, and a top wall to form a collapsible bag. A first zipper track is disposed into the bottom wall connecting between a portion of the bottom wall and a first position. A second zipper track is disposed into the bottom wall opposite to the first zipper track. The second zipper track is located between the portion of the bottom wall and a second position. A zipper slider is provided for connecting together the first zipper track and the second zipper track for coupling of the first zipper track and the second zipper track along the contour of the collapsible bag.
Abstract:
A method for fabricating an integrated circuit device, e.g., DRAM. The method includes providing a semiconductor substrate, e.g., silicon wafer. The method includes forming a plurality of MOS transistor devices overlying the semiconductor substrate. Each of the MOS transistor devices has a nitride cap and nitride sidewall spacers. Each of the transistors is separated from each other by a predetermined width. The method includes forming an interlayer dielectric layer overlying the plurality of MOS transistor devices and removing a portion of the interlayer dielectric material to expose at least portions of three MOS transistor devices and expose at least three regions between respective MOS transistor devices. The method deposits polysilicon fill material overlying the exposed three regions and overlying the three MOS transistor devices. Next, the method performs a chemical mechanical planarization process on the polysilicon material to reduce a thickness of the polysilicon material to expose a portion of the interlayer dielectric material. The method continues the chemical mechanical planarization process to remove the interlayer dielectric material and the polysilicon film material until the cap nitride layer on each of the MOS transistors has been exposed. The method uses the cap nitride layer overlying each of the MOS transistors as a polish stop layer.
Abstract:
A computer-implemented system and method for verifying access to a network account are provided. A first user communication portal is associated with a user network account. A request to access the user network account is received from a second user communication portal. Security criteria related to the second user communication portal is determined. Access to the user network account is enabled upon receipt of a communication associated with the first user communication portal when the security criteria is of a predetermined value.
Abstract:
A method for manufacturing an LCOS device. The method includes providing a substrate (e.g., silicon wafer) having a surface region. The method includes forming an interlayer dielectric layer overlying the surface region of the substrate. The method patterns the interlayer dielectric layer to form a plurality of recessed regions. Each of the recessed regions corresponds to a pixel element for a LCOS device. Each of the recessed regions is isolated by a portion of dielectric material defining a border for each of the recessed regions. Each of the border regions forming a peripheral region surrounding each recessed region. The method deposits an aluminum material or aluminum alloy material within each of the recessed regions to fill each of the recessed regions and to cover exposed portions of the border regions. The method forms a photomask overlying the aluminum material and patterns the photomask to expose regions corresponding to the recessed regions and protects regions corresponding to the border regions. The method removes exposed regions of the aluminum material while protecting the regions corresponding to the border regions with the photomask. The method continues the removing until the aluminum material has been removed to a vicinity of an upper region of the border regions. Next, the method strips the patterned photomask to expose protruding aluminum material, which surrounds the patterned aluminum material. The method touch-up polishes the protruding aluminum material and portions of the patterned aluminum material while using the border regions as a polish stop to planarize an upper surface region formed by the border regions and the patterned aluminum material.
Abstract:
An apparatus is capable of collapsing into a smaller configuration is disclosed. The apparatus comprises a first sidewall and a second sidewall interconnected by a bottom wall, a front wall, a rear wall, and a top wall to form a collapsible bag. A first zipper track is disposed into the bottom wall connecting between a portion of the bottom wall and a first position. A second zipper track is disposed into the bottom wall opposite to the first zipper track. The second zipper track is located between the portion of the bottom wall and a second position. A zipper slider is provided for connecting together the first zipper track and the second zipper track for coupling of the first zipper track and the second zipper track along the contour of the collapsible bag.
Abstract:
Process, slurries formulation and polishing mechanism are disclosed for the formation of silver (Ag) or Ag alloy film features on a substrate using CMP. The process and slurries can achieve Ag or Ag alloy film features with good planarization, low roughness, high reflectivity, and low defectivity.
Abstract:
A fixing structure for fixing a casing and a base frame of an electronic device together includes: a melt hole disposed in the base frame and a melt post formed on the casing, wherein the melt hole is provided with an opening having its diameter being gradually enlarged from inside outward, so that when combining the casing with the base frame, the melt post passes through the melt hole and is exposed by the opening. Through the design of the opening, the fixing effect upon melting can be strengthened without occupying a lot of space around the melt hole.
Abstract:
A dual lever locking hook comprises a hook member having a mounting portion and a catching portion, first and second locking levers, and a connecting member rotatably coupled to the hook member. The locking levers are affixed to the hook member at the mounting portion and latch onto the hook member at the catching portion. The arrangement of the locking levers at the mounting portion provides a biasing condition which prevents a breach of the locking hook.
Abstract:
A chemical-mechanical planarization (CMP) slurry comprising at least one abrasive particles at least one oxidizer, and at least one carrier. The abrasive particles can be selected from: a particle with all soft material, a particle having a soft outer material and a hard inner material, an inner charged particle, a magnetized particle, and an empty core particle. The substrate to be polished can be Aluminum, Copper, Ti, TiN, Ag. W, or their alloys, Oxide, Ni—P, Si3N4 for example.
Abstract translation:包括至少一种磨料颗粒至少一种氧化剂和至少一种载体的化学机械平面化(CMP)浆料。 研磨颗粒可以选自:具有所有软质材料的颗粒,具有柔软的外部材料的颗粒和硬的内部材料,内部带电颗粒,磁化颗粒和空芯颗粒。 待抛光的基材可以是铝,铜,钛,钛,银。 W或其合金,例如氧化物,Ni-P,Si 3 N 4 N 4。