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公开(公告)号：US09850403B2
公开(公告)日：2017-12-26
申请号：US15603634
申请日：2017-05-24
发明人： Steven Kraft , Andrew Wolff , Phillip W. Carter , Kristin Hayes , Benjamin Petro
IPC分类号： H01L21/302 , H01L21/461 , C09G1/02 , B24B37/04 , C23F3/04 , H01L21/321
CPC分类号： C09G1/02 , B24B37/044 , C23F3/04 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
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公开(公告)号：US20170335139A1
公开(公告)日：2017-11-23
申请号：US15525321
申请日：2015-12-07
发明人： Jeong Hwan JEONG , Young Chul JUNG , Dong Hun KANG , Tae Wan KIM , Jong IL NOH , Chang Ki HONG
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1409 , C09K3/1436 , C09K3/1463 , C23F3/04 , H01L21/3212
摘要： Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.
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公开(公告)号：US09786404B2
公开(公告)日：2017-10-10
申请号：US14408709
申请日：2013-04-24
CPC分类号： H01B1/026 , C23F3/04 , C23G1/20 , H01L51/441 , H01L51/5218 , H01L51/5231 , H01L2251/5315 , H01L2251/5338 , Y02E10/549 , Y10T428/12993
摘要： There is provided a metal foil suitable for an electrode substrate for an electronic element, which makes it possible to suppress oxidation of the ultra-smooth surface and also prevent roll scratches when wound in a roll. The metal foil of the present invention is made of copper or copper alloy. The front surface of the metal foil has an ultra-smooth surface profile having an arithmetic mean roughness Ra of 30 nm or less as determined in accordance with JIS B 0601-2001. The back surface of the metal has a concave-dominant surface profile having a Pv/Pp ratio of 1.5 or more, the Pv/Pp ratio being a ratio of a maximum profile valley depth Pv to a maximum profile peak height Pp of a profile curve as determined in a rectangular area of 181 μm by 136 μm in accordance with JIS B 0601-2001.
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公开(公告)号：US20170267895A9
公开(公告)日：2017-09-21
申请号：US14799971
申请日：2015-07-15
IPC分类号： C09G1/02 , H01L21/768 , H01L21/3105 , H01L21/321
CPC分类号： C09G1/02 , C23F3/04 , H01L21/30625 , H01L21/31055 , H01L21/3212 , H01L21/32125 , H01L21/7684 , H01L21/76865
摘要： The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.
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公开(公告)号：US09698050B1
公开(公告)日：2017-07-04
申请号：US15223020
申请日：2016-07-29
IPC分类号： H01L21/768 , H01L23/532 , H01J37/32 , C23C16/24 , C23F3/04 , H01L23/522
CPC分类号： H01L21/76879 , C23C16/045 , C23C16/14 , C23C16/24 , C23F1/12 , C23F3/04 , H01J37/32 , H01J37/32009 , H01J37/3244 , H01J37/32733 , H01J37/32834 , H01J2237/334 , H01L21/67017 , H01L21/67103 , H01L21/67248 , H01L21/68742 , H01L21/768 , H01L21/76832 , H01L21/76834 , H01L21/76841 , H01L21/76846 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76898 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L23/53295
摘要： A method of manufacturing a semiconductor device includes loading, into a process chamber, a substrate including a first wiring layer having a first interlayer insulating film, a plurality of copper-containing films formed on the first interlayer insulating film and used as a wiring, an inter-wiring insulating film insulating between the plurality of copper-containing films, and a void formed between the plurality of copper-containing films, and a first diffusion barrier film formed on a portion of an upper surface of the copper-containing films to suppress diffusion of a component of the copper-containing films, and forming a second diffusion barrier film configured to suppress diffusion of a component of the copper-containing films on a surface of another portion, on which the first diffusion barrier film is not formed, in the copper-containing films.
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公开(公告)号：US09631122B1
公开(公告)日：2017-04-25
申请号：US14925054
申请日：2015-10-28
发明人： Kevin Dockery , Helin Huang , Lin Fu
摘要： Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.
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公开(公告)号：US09528030B1
公开(公告)日：2016-12-27
申请号：US14918756
申请日：2015-10-21
发明人： Steven Kraft , Phillip W. Carter , Jason Seabold
IPC分类号： H01L21/302 , H01L21/461 , C09G1/02 , C23F3/04 , H01L21/321 , H01L21/768
CPC分类号： C09G1/02 , C23F3/04 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition that contains (a) abrasive particles, (b) an azole compound having an octanol-water log P of about 1 to about 2, (c) a cobalt corrosion inhibitor, wherein the cobalt corrosion inhibitor comprises an anionic head group and a C8-C14 aliphatic tail group, (d) a cobalt accelerator, (e) an oxidizing agent that oxidizes cobalt, and (f) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
摘要翻译： 本发明提供一种化学机械抛光组合物，其包含（a）研磨颗粒，（b）辛醇 - 水对数P为约1至约2的唑类化合物，（c）钴腐蚀抑制剂，其中钴腐蚀抑制剂 包括阴离子头基和C 8 -C 14脂族尾基，（d）钴促进剂，（e）氧化钴的氧化剂和（f）水，其中抛光组合物的pH为约3至约8.5 。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，底物含有钴。
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公开(公告)号：US09447505B2
公开(公告)日：2016-09-20
申请号：US14731063
申请日：2015-06-04
发明人： Steven T. Mayer , Eric G. Webb , David W. Porter
IPC分类号： C23F1/00 , C23F1/18 , C23F1/02 , C23F1/34 , C23F3/04 , C25D5/48 , H01L21/02 , H01L21/288 , H01L21/321 , H01L21/3213 , H01L21/67 , H01L21/768 , H01L23/532 , C25D7/12 , C25D17/00
CPC分类号： C23F1/18 , C23F1/02 , C23F1/34 , C23F3/04 , C25D5/48 , C25D7/123 , C25D17/001 , H01L21/02074 , H01L21/288 , H01L21/32115 , H01L21/32134 , H01L21/67051 , H01L21/6708 , H01L21/76849 , H01L21/76856 , H01L21/76858 , H01L21/76883 , H01L21/76898 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Exposed copper regions on a semiconductor substrate can be etched by a wet etching solution comprising (i) one or more complexing agents selected from the group consisting of bidentate, tridentate, and quadridentate complexing agents; and (ii) an oxidizer, at a pH of between about 5 and 12. In many embodiments, the etching is substantially isotropic and occurs without visible formation of insoluble species on the surface of copper. The etching is useful in a number of processes in semiconductor fabrication, including for partial or complete removal of copper overburden, for planarization of copper surfaces, and for forming recesses in copper-filled damascene features. Examples of suitable etching solutions include solutions comprising a diamine (e.g., ethylenediamine) and/or a triamine (e.g., diethylenetriamine) as bidentate and tridentate complexing agents respectively and hydrogen peroxide as an oxidizer. In some embodiments, the etching solutions further include pH adjustors, such as sulfuric acid, aminoacids, and carboxylic acids.
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公开(公告)号：US20160153095A1
公开(公告)日：2016-06-02
申请号：US15018327
申请日：2016-02-08
申请人： FUJIMI INCORPORATED
发明人： Yukinobu YOSHIZAKI
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C23F1/16 , C23F3/00 , C23F3/04 , H01L21/30625
摘要： To provide a means by which polishing rate can further be improved in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element. Oxo acid containing a metal element or a semimetal element, and water are contained in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element.
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公开(公告)号：US20150315419A1
公开(公告)日：2015-11-05
申请号：US14799971
申请日：2015-07-15
IPC分类号： C09G1/02 , H01L21/768 , H01L21/3105 , H01L21/321
CPC分类号： C09G1/02 , C23F3/04 , H01L21/30625 , H01L21/31055 , H01L21/3212 , H01L21/32125 , H01L21/7684 , H01L21/76865
摘要： The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.
摘要翻译： 本发明提供了通过抑制电子在阻挡导体和导电物质之间的边界附近转移而抑制导电物质的布线的腐蚀或抑制阻挡导体和导电物质的双金属腐蚀的CMP抛光浆料，例如 作为铜。 本发明提供了用于CMP的抛光浆料，用于至少对与导体层接触的导体层和导电物质层进行抛光，其中在50±5℃下导电物质与导体之间的电位差的绝对值为0.25 当电位计的正电极和负电极分别连接到导电物质和导体时，抛光浆料中的V或更小。 用于CMP的抛光浆料优选包含至少一种选自含有羟基，羰基，羧基，氨基，酰胺基和亚磺酰基中的任何一种的杂环化合物并且含有氮和硫原子中的至少一个的化合物。
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