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1.发明申请公开(公告)号：US20100119406A1
公开(公告)日：2010-05-13
申请号：US12613732
申请日：2009-11-06
Applicant: Christian DUSSARRAT , Clement LANSALOT-MATRAS
Inventor： Christian DUSSARRAT , Clement LANSALOT-MATRAS
CPC classification number: C07F15/0046 , C07F15/006 , C07F15/0086 , C07F15/04 , C23C16/18 , C23C16/45553
Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor is provided and at least partially deposited on the substrate to form a metal containing film.
Abstract translation: 在一个或多个基底上沉积膜的方法和组合物包括提供反应器中设置有至少一个底物的反应器。 提供至少一种金属前体并且至少部分地沉积在基底上以形成含金属膜。
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2.发明申请PLASMA-ENHANCED DEPOSITION OF COPPER-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE COPPER PRECURSORS 审中-公开使用氨基甲酸铜前体的各种应用的含铜复合膜的等离子体增强沉积公开(公告)号：US20130084407A1
公开(公告)日：2013-04-04
申请号：US13248092
申请日：2011-09-29
Applicant: Christian DUSSARRAT , Clement LANSALOT-MATRAS , Vincent M. OMARJEE
Inventor： Christian DUSSARRAT , Clement LANSALOT-MATRAS , Vincent M. OMARJEE
CPC classification number: C23C16/18 , C23C16/45525 , C23C16/50
Abstract: The disclosure relates to a process for depositing a Copper, Gold or Silver containing film using a Copper, Gold or Silver guanidinate and/or Copper, Gold or Silver amidinate precursor, suitable for plasma deposition at temperature equal or lower than 120 degrees C., to a plasma deposition process carried out at a temperature equal or lower than 120 degrees C.
Abstract translation: 本公开涉及一种使用铜，金或银胍和/或铜，金或银脒前体沉积含铜，金或银的膜的方法，其适于在等于或低于120℃的温度下进行等离子体沉积， 涉及在等于或低于120℃的温度下进行的等离子体沉积工艺。
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3.发明申请CYCLOPENTADIENYL TRANSITION METAL PRECURSORS FOR DEPOSITION OF TRANSITION METAL-CONTAINING FILMS 有权用于沉积金属过渡膜的环状二亚乙基过渡金属前体公开(公告)号：US20130011580A1
公开(公告)日：2013-01-10
申请号：US13618949
申请日：2012-09-14
Applicant: Christian DUSSARRAT , Clement LANSALOT-MATRAS
Inventor： Christian DUSSARRAT , Clement LANSALOT-MATRAS
CPC classification number: C23C16/18 , C23C16/45553
Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.
Abstract translation: 在一个或多个基底上沉积膜的方法和组合物包括提供反应器中设置有至少一个底物的反应器。 提供至少一种金属前体并且至少部分地沉积到基底上以形成含金属的膜。
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Patent Agency Ranking
公开(公告)号：US20100193951A1
公开(公告)日：2010-08-05
申请号：US12693930
申请日：2010-01-26
Applicant: Christian Dussarrat , Clement LANSALOT-MATRAS , Vincent M. Omarjee , Cheng-Fang Hsiao
Inventor： Christian Dussarrat , Clement LANSALOT-MATRAS , Vincent M. Omarjee , Cheng-Fang Hsiao
IPC: H01L21/3205 , H01L23/48
CPC classification number: H01L21/28562 , C23C16/18 , C23C16/45536 , C23C16/45553 , H01L21/76871
Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.
Abstract translation: 在基材上形成含金属薄膜的组合物和方法。 提供反应器和反应器中的至少一个基板。 将含金属的双 - 二氮嗪酮前体引入反应器。 将反应器保持在设定的温度和压力下，并将前体与基底接触以在基底上形成含金属的膜。
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5.发明申请PLASMA-ENHANCED DEPOSITION OF RUTHENIUM-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE RUTHENIUM PRECURSORS 审中-公开使用氨基甲酸酯前驱体的各种应用的含有薄荷膜的等离子体增强沉积公开(公告)号：US20130089680A1
公开(公告)日：2013-04-11
申请号：US13269151
申请日：2011-10-07
Applicant: Christian DUSSARRAT , Vincent M. OMARJEE , Clement LANSALOT-MATRAS
Inventor： Christian DUSSARRAT , Vincent M. OMARJEE , Clement LANSALOT-MATRAS
CPC classification number: C23C16/18 , C23C16/06 , C23C16/40 , C23C16/45536 , C23C16/45553 , C23C16/50
Abstract: The present invention relates to a process for the use of Ruthenium amidinate metal precursors for the deposition of Ruthenium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
Abstract translation: 本发明涉及使用钌钌金属前体用于通过等离子体增强原子层沉积（PEALD）或等离子体增强化学气相沉积（PECVD）沉积含钌膜的方法。
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6.发明申请PLASMA-ENHANCED DEPOSITION OF NICKEL-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE NICKEL PRECURSORS 审中-公开使用氨基酸镍前驱体的各种应用的含镍包装膜的等离子体增强沉积公开(公告)号：US20130089678A1
公开(公告)日：2013-04-11
申请号：US13269115
申请日：2011-10-07
Applicant: Christian DUSSARRAT , Vincent M. OMARJEE , Clement LANSALOT-MATRAS
Inventor： Christian DUSSARRAT , Vincent M. OMARJEE , Clement LANSALOT-MATRAS
CPC classification number: C23C16/18 , C23C16/06 , C23C16/45536 , C23C16/45553 , C23C16/50
Abstract: The disclosure relates to a process for depositing a Nickel or Cobalt containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C.
Abstract translation: 本公开涉及一种用于沉积含镍或含钴的膜的方法，包括以下步骤：提供适于在等于或低于500℃的温度下等离子体沉积的金属胍和/或金属脒前体，等离子体沉积方法包括 沉积温度等于或低于500℃
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7.发明申请公开(公告)号：US20100256405A1
公开(公告)日：2010-10-07
申请号：US12613742
申请日：2009-11-06
Applicant: Christian DUSSARRAT , Clement LANSALOT-MATRAS
Inventor： Christian DUSSARRAT , Clement LANSALOT-MATRAS
IPC: C07F15/00
CPC classification number: C07F15/006
Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor is provided and at least partially deposited on the substrate to form a metal containing film.
Abstract translation: 在一个或多个基底上沉积膜的方法和组合物包括提供反应器中设置有至少一个底物的反应器。 提供至少一种金属前体并且至少部分地沉积在基底上以形成含金属膜。
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8.发明申请HETEROLEPTIC CYCLOPENTADIENYL TRANSITION METAL PRECURSORS FOR DEPOSITION OF TRANSITION METAL-CONTAINING FILMS 有权用于沉积金属过渡膜的异质环状二亚乙基过渡金属前体公开(公告)号：US20100021747A1
公开(公告)日：2010-01-28
申请号：US12509024
申请日：2009-07-24
Applicant: Christian DUSSARRAT , Clement LANSALOT-MATRAS
Inventor： Christian DUSSARRAT , Clement LANSALOT-MATRAS
CPC classification number: C23C16/18 , C23C16/45553
Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.
Abstract translation: 在一个或多个基底上沉积膜的方法和组合物包括提供反应器中设置有至少一个底物的反应器。 提供至少一种金属前体并且至少部分地沉积到基底上以形成含金属的膜。
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