公开(公告)号：US07480892B2

公开(公告)日：2009-01-20

申请号：US11513196

申请日：2006-08-31

Applicant: Chui-fu Chiu ,  Wen-Bin Wu

Inventor： Chui-fu Chiu ,  Wen-Bin Wu

IPC: G06F17/50

CPC classification number: G03F9/7076 ,  G03F1/42 ,  G03F7/70633 ,  G03F7/70683

Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuration on the substrate was damaged during process.

Abstract translation: 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第一矩形区域和所述第三矩形区域具有相同的第一图案构造，所述第一图案构造具有第一图案元素，所述第二矩形区域的长边和所述第四矩形区域的长边平行 并且第二和第四矩形区域具有相同的具有第二图案元素的第二图案构造，第一矩形区域的长边与第二矩形区域的长边垂直; 其中，所述第一图案元件与所述第二图案元件不同，用于当所述基板上的所述第一图案配置在处理期间被损坏时，所述第二图案构造被选择为对齐。

公开(公告)号：US20080032205A1

公开(公告)日：2008-02-07

申请号：US11513288

申请日：2006-08-31

Applicant: Chui-fu Chiu ,  Wen-Bin Wu

Inventor： Chui-fu Chiu ,  Wen-Bin Wu

IPC: G03F1/00 ,  G03F9/00 ,  G03C5/00 ,  H01L23/544

CPC classification number: G03F7/70633

Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein each pattern configuration has at least two different pattern elements allowing other pattern elements be chosen to align when any one of the pattern elements on the substrate was damaged during process.

Abstract translation: 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第三矩形区域的一侧彼此平行，并且所述第二矩形区域的长边和所述第四矩形区域的长边彼此平行，所述第一矩形区域的长边垂直于所述长边 的第二矩形区域; 其中每个图案配置具有至少两个不同的图案元件，当在处理期间衬底上的任何一个图案元件被损坏时，允许其它图案元件被选择以对准。

公开(公告)号：US20080034344A1

公开(公告)日：2008-02-07

申请号：US11513196

申请日：2006-08-31

Applicant: Chui-fu Chiu ,  Wen-Bin Wu

Inventor： Chui-fu Chiu ,  Wen-Bin Wu

IPC: G06F17/50

CPC classification number: G03F9/7076 ,  G03F1/42 ,  G03F7/70633 ,  G03F7/70683

Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuration on the substrate was damaged during process.

Abstract translation: 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第一矩形区域和所述第三矩形区域具有相同的第一图案构造，所述第一图案构造具有第一图案元素，所述第二矩形区域的长边和所述第四矩形区域的长边平行 并且第二和第四矩形区域具有相同的具有第二图案元素的第二图案构造，第一矩形区域的长边与第二矩形区域的长边垂直; 其中，所述第一图案元件与所述第二图案元件不同，用于当所述基板上的所述第一图案配置在处理期间被损坏时，所述第二图案构造被选择为对齐。

公开(公告)号：US07582395B2

公开(公告)日：2009-09-01

申请号：US11513288

申请日：2006-08-31

Applicant: Chui-fu Chiu ,  Wen-Bin Wu

Inventor： Chui-fu Chiu ,  Wen-Bin Wu

IPC: G03F9/00

CPC classification number: G03F7/70633

Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein each pattern configuration has at least two different pattern elements allowing other pattern elements be chosen to align when any one of the pattern elements on the substrate was damaged during process.

Abstract translation: 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第三矩形区域的一侧彼此平行，并且所述第二矩形区域的长边和所述第四矩形区域的长边彼此平行，所述第一矩形区域的长边垂直于所述长边 的第二矩形区域; 其中每个图案配置具有至少两个不同的图案元件，当在处理期间衬底上的任何一个图案元件被损坏时，允许其它图案元件被选择以对准。