公开(公告)号：US07480892B2

公开(公告)日：2009-01-20

申请号：US11513196

申请日：2006-08-31

Applicant: Chui-fu Chiu ,  Wen-Bin Wu

Inventor： Chui-fu Chiu ,  Wen-Bin Wu

IPC: G06F17/50

CPC classification number: G03F9/7076 ,  G03F1/42 ,  G03F7/70633 ,  G03F7/70683

Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuration on the substrate was damaged during process.

Abstract translation: 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第一矩形区域和所述第三矩形区域具有相同的第一图案构造，所述第一图案构造具有第一图案元素，所述第二矩形区域的长边和所述第四矩形区域的长边平行 并且第二和第四矩形区域具有相同的具有第二图案元素的第二图案构造，第一矩形区域的长边与第二矩形区域的长边垂直; 其中，所述第一图案元件与所述第二图案元件不同，用于当所述基板上的所述第一图案配置在处理期间被损坏时，所述第二图案构造被选择为对齐。

公开(公告)号：US20080032205A1

公开(公告)日：2008-02-07

申请号：US11513288

申请日：2006-08-31

Applicant: Chui-fu Chiu ,  Wen-Bin Wu

Inventor： Chui-fu Chiu ,  Wen-Bin Wu

IPC: G03F1/00 ,  G03F9/00 ,  G03C5/00 ,  H01L23/544

CPC classification number: G03F7/70633

Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein each pattern configuration has at least two different pattern elements allowing other pattern elements be chosen to align when any one of the pattern elements on the substrate was damaged during process.

Abstract translation: 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第三矩形区域的一侧彼此平行，并且所述第二矩形区域的长边和所述第四矩形区域的长边彼此平行，所述第一矩形区域的长边垂直于所述长边 的第二矩形区域; 其中每个图案配置具有至少两个不同的图案元件，当在处理期间衬底上的任何一个图案元件被损坏时，允许其它图案元件被选择以对准。

公开(公告)号：US20080034344A1

公开(公告)日：2008-02-07

申请号：US11513196

申请日：2006-08-31

Applicant: Chui-fu Chiu ,  Wen-Bin Wu

Inventor： Chui-fu Chiu ,  Wen-Bin Wu

IPC: G06F17/50

CPC classification number: G03F9/7076 ,  G03F1/42 ,  G03F7/70633 ,  G03F7/70683

Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuration on the substrate was damaged during process.

Abstract translation: 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第一矩形区域和所述第三矩形区域具有相同的第一图案构造，所述第一图案构造具有第一图案元素，所述第二矩形区域的长边和所述第四矩形区域的长边平行 并且第二和第四矩形区域具有相同的具有第二图案元素的第二图案构造，第一矩形区域的长边与第二矩形区域的长边垂直; 其中，所述第一图案元件与所述第二图案元件不同，用于当所述基板上的所述第一图案配置在处理期间被损坏时，所述第二图案构造被选择为对齐。

公开(公告)号：US07582395B2

公开(公告)日：2009-09-01

申请号：US11513288

申请日：2006-08-31

Applicant: Chui-fu Chiu ,  Wen-Bin Wu

Inventor： Chui-fu Chiu ,  Wen-Bin Wu

IPC: G03F9/00

CPC classification number: G03F7/70633

Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein each pattern configuration has at least two different pattern elements allowing other pattern elements be chosen to align when any one of the pattern elements on the substrate was damaged during process.

Abstract translation: 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第三矩形区域的一侧彼此平行，并且所述第二矩形区域的长边和所述第四矩形区域的长边彼此平行，所述第一矩形区域的长边垂直于所述长边 的第二矩形区域; 其中每个图案配置具有至少两个不同的图案元件，当在处理期间衬底上的任何一个图案元件被损坏时，允许其它图案元件被选择以对准。

公开(公告)号：US20070190736A1

公开(公告)日：2007-08-16

申请号：US11616849

申请日：2006-12-27

Applicant: An-Hsiung Liu ,  Chiang-Lin Shih ,  Wen-Bin Wu ,  Hui-Min Mao ,  Lin-Chin Su ,  Pei-Ing Lee

Inventor： An-Hsiung Liu ,  Chiang-Lin Shih ,  Wen-Bin Wu ,  Hui-Min Mao ,  Lin-Chin Su ,  Pei-Ing Lee

IPC: H01L21/20

CPC classification number: H01L29/66181 ,  G03F7/70633 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L23/544 ,  H01L27/1087 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A small-size (w

Abstract translation: 提出了与“k1工艺”结合的小尺寸（w <0.5微米）对准标记，其特别适用于制造需要高精度AA-DT和GC-DT重叠对准的沟槽电容器DRAM器件。 利用“k1工艺”来蚀刻散布在对准标记沟槽中的多晶硅，并刷新沟槽轮廓，从而提高覆盖对准精度和精度。

公开(公告)号：US06998226B2

公开(公告)日：2006-02-14

申请号：US10193464

申请日：2002-07-10

Applicant: Yuan-Hsun Wu ,  Wen-Bin Wu ,  Yung Long Hung ,  Ya Chih Wang

Inventor： Yuan-Hsun Wu ,  Wen-Bin Wu ,  Yung Long Hung ,  Ya Chih Wang

IPC: G03F7/38 ,  G03F7/40

CPC classification number: G03F7/168 ,  G03F7/091 ,  G03F7/2022 ,  G03F7/38 ,  Y10S430/151

Abstract: A method of forming a patterned photoresist layer. First, an anti-reflection coating layer is formed on a substrate. Next, a first bake is performed. A photoresist layer is then formed on the anti-reflection coating layer. Exposure is performed. A second bake is performed, wherein the temperature difference between the first bake and the second bake is about 35 ° C.˜55 ° C. Finally, development is performed. The patterned photoresist layer features have perfect profiles in accordance with this invention.

Abstract translation: 形成图案化光致抗蚀剂层的方法。 首先，在基板上形成防反射涂层。 接下来，进行第一烘焙。 然后在抗反射涂层上形成光致抗蚀剂层。 曝光进行。 进行第二烘烤，其中第一烘烤和第二烘烤之间的温度差为约35℃〜55℃。最后，进行显影。 图案化的光致抗蚀剂层特征具有根据本发明的完美的轮廓。

公开(公告)号：US20050127356A1

公开(公告)日：2005-06-16

申请号：US10732370

申请日：2003-12-11

Applicant: Wen-Bin Wu

Inventor： Wen-Bin Wu

IPC: G03F1/14 ,  H01L21/66 ,  H01L23/58 ,  H01L29/10

CPC classification number: H01L22/12 ,  G03F1/44 ,  G03F7/70625

Abstract: Disclosed is a test mask structure. The test mask structure of the present invention comprises at least an array pattern region, in a certain proportion to the final product, having a first pattern density according to the certain proportion; and at least one test mask pattern region having a second pattern density. In the test mask structure of the present invention, the required pattern density is obtained by adjusting the area of the array pattern region and the area of the test mask pattern region according to the first pattern density and the second pattern density.

Abstract translation: 公开了一种测试掩模结构。 本发明的测试掩模结构至少包括与最终产品一定比例的阵列图案区域，其具有按照一定比例的第一图案密度; 以及具有第二图案密度的至少一个测试掩模图案区域。 在本发明的测试掩模结构中，通过根据第一图案密度和第二图案密度调整阵列图案区域的面积和测试掩模图案区域的面积来获得所需的图案密度。

公开(公告)号：US6145358A

公开(公告)日：2000-11-14

申请号：US291287

申请日：1999-04-14

Applicant: Wen-Bin Wu

Inventor： Wen-Bin Wu

IPC: E05B13/00 ,  E05B15/00 ,  E05B15/02 ,  E05B55/04

CPC classification number: E05B13/004 ,  E05B15/02 ,  E05B15/0053 ,  Y10T70/5394 ,  Y10T70/7723 ,  Y10T70/7915

Abstract: An auxiliary lock includes an exterior lock assembly having a knob and an actuating plate that is connected to the knob to rotate therewith. A casing is mounted inside a door for rotatably supporting a knob that is also connected to the actuating plate to rotate therewith. A control plate is mounted in the casing and includes a first end extended beyond the casing for manual operation. A second end of the control plate includes a notch releasably engaged with one of a number of teeth of an engaging wheel mounted in the casing. The control plate is movable vertically and retained in place by a positioning element. The engaging wheel is connected to the actuating plate to rotate therewith.

Abstract translation: 辅助锁包括具有旋钮的外部锁定组件和连接到旋钮以随之旋转的致动板。 壳体安装在门内，用于可旋转地支撑旋钮，该旋钮也连接到致动板以与其一起旋转。 控制板安装在壳体中，并且包括延伸超出壳体的用于手动操作的第一端。 控制板的第二端包括可拆卸地与安装在壳体中的接合轮的多个齿中的一个啮合的凹口。 控制板可以垂直移动并通过定位元件保持在适当位置。 接合轮连接到致动板以与其一起旋转。

公开(公告)号：US07915133B2

公开(公告)日：2011-03-29

申请号：US11953481

申请日：2007-12-10

Applicant: Kuo-Yao Cho ,  Wen-Bin Wu ,  Chiang-Lin Shih ,  Jen-Jui Huang

Inventor： Kuo-Yao Cho ,  Wen-Bin Wu ,  Chiang-Lin Shih ,  Jen-Jui Huang

IPC: H01L21/20

CPC classification number: H01L29/945 ,  H01L29/66181

Abstract: A method of forming a ring-type capacitor is provided. The method includes providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer defining a ring pattern; removing the substrate by using the patterned mask layer as a mask to form a ring-type trench in the substrate; the ring-type trench including an inner wall and an outer wall; and forming a capacitor structure on the inner wall and the outer wall of the ring-type trench.

Abstract translation: 提供一种形成环型电容器的方法。 该方法包括提供基板; 在所述衬底上形成图案化掩模层，所述图案化掩模层限定环形图案; 通过使用图案化掩模层作为掩模去除衬底，以在衬底中形成环型沟槽; 所述环形沟槽包括内壁和外壁; 并在环形沟槽的内壁和外壁上形成电容器结构。

公开(公告)号：US06987053B2

公开(公告)日：2006-01-17

申请号：US10792345

申请日：2004-03-03

Applicant: Wen-Bin Wu ,  Chih-Yuan Hsiao ,  Hui-Min Mao

Inventor： Wen-Bin Wu ,  Chih-Yuan Hsiao ,  Hui-Min Mao

IPC: H01L21/76

CPC classification number: G03F9/7019 ,  G03F7/70633 ,  G03F9/7011

Abstract: A method for evaluating reticle registration between two reticle patterns. A wafer is defined and etched to form a first exposure pattern, by photolithography with a first reticle having a first reticle pattern thereon. A photoresist layer is formed over the wafer and defined as a second exposure pattern, by photolithography with a second reticle having a second reticle pattern thereon. A deviation value between the first and second exposure patterns is measured by a CD-SEM. The deviation value is calibrated according to the scaling degree and the overlay offset to obtain a registration data. The reticle registration between the two reticle patterns is evaluated based on the registration data.

Abstract translation: 一种用于评估两个掩模版图案之间的掩模版配准的方法。 通过用其上具有第一掩模版图案的第一掩模版通过光刻来限定和蚀刻晶片以形成第一曝光图案。 在晶片上形成光致抗蚀剂层，并通过光刻法将其定义为第二曝光图案，其上具有第二掩模版图案的第二掩模版。 通过CD-SEM测量第一和第二曝光图案之间的偏差值。 根据缩放程度和覆盖偏移校正偏差值，以获得注册数据。 基于登记数据评价两个掩模图案之间的掩模版登记。