公开(公告)号：US20120308788A1

公开(公告)日：2012-12-06

申请号：US13149841

申请日：2011-05-31

Applicant: Chui-Fu Chiu ,  Chun-Yen Huang

Inventor： Chui-Fu Chiu ,  Chun-Yen Huang

IPC: G03F7/20 ,  B44C1/17 ,  B32B37/02 ,  B32B3/10

CPC classification number: G03F7/70633 ,  G03F7/70683 ,  Y10T428/24851

Abstract: An overlay mark set includes a substrate, a first overlay mark and a second overlay mark. The first overlay mark is disposed on the substrate for representing a first layout pattern. The second overlay mark is also disposed on the substrate for representing a second layout pattern. In particular, the first overlay mark is in direct contact with the second overlay mark.

Abstract translation: 覆盖标记集包括基底，第一覆盖标记和第二覆盖标记。 第一覆盖标记设置在用于表示第一布局图案的基板上。 第二覆盖标记也设置在基板上用于表示第二布局图案。 特别地，第一覆盖标记与第二覆盖标记直接接触。

公开(公告)号：US20120299204A1

公开(公告)日：2012-11-29

申请号：US13116585

申请日：2011-05-26

Applicant: Chui Fu Chiu

Inventor： Chui Fu Chiu

IPC: H01L23/544 ,  H01L21/71

CPC classification number: G03F7/70633

Abstract: A method for fabricating an overlay mark, including the steps of: forming a patterned layer on a substrate, wherein the patterned layer comprises at least one mark element forming region, wherein each mark element forming region comprises two column recesses and a plurality of row recesses, and the row recesses connect the two column recesses; growing a mark material from the sidewalls of the column recesses and the row recesses so that the mark material merges in the column recesses and the row recesses; and removing the patterned layer. Consequently, an overlay mark including mark elements with high image contrast is fabricated.

Abstract translation: 一种用于制造覆盖标记的方法，包括以下步骤：在衬底上形成图案化层，其中所述图案化层包括至少一个标记元件形成区域，其中每个标记元件形成区域包括两个列凹槽和多个行凹槽 并且行凹槽连接两个柱凹槽; 从柱凹槽和排凹槽的侧壁生长标记材料，使得标记材料合并在柱凹槽和排凹槽中; 并去除图案层。 因此，制造包括具有高图像对比度的标记元素的重叠标记。

公开(公告)号：US20130147129A1

公开(公告)日：2013-06-13

申请号：US13314684

申请日：2011-12-08

Applicant: Chui Fu Chiu

Inventor： Chui Fu Chiu

IPC: H01L21/58 ,  B25B11/00

CPC classification number: H01L21/6831 ,  H01L21/6838 ,  H01L21/68742 ,  Y10T279/11 ,  Y10T279/23

Abstract: A wafer supporting structure for improving the critical dimension uniformity of a wafer, including: a chuck, a plurality of pin holes, and a platform positioned under the chuck. The chick has a surface and configured to receive a wafer thereon, the plurality of pin holes form through the chuck, and the platform comprises a plurality of movable pieces which support corresponding pins, wherein the pins are configured to move in a direction perpendicularly protruding from or sinking into the surface of the chuck. The movable piece has one end supporting the bottom of the pin and the other end subjected to an pneumatic pressure, hydraulic pressure, or piezoelectricity.

Abstract translation: 一种用于改善晶片的临界尺寸均匀性的晶片支撑结构，包括：卡盘，多个销孔和位于卡盘下方的平台。 小鸡具有表面并被配置为在其上接收晶片，多个针孔通过卡盘形成，并且平台包括支撑相应销的多个可动件，其中销构造成沿垂直于 或沉入卡盘的表面。 可动件具有支撑销底部的一端，另一端承受气压，液压或压电性。

公开(公告)号：US07480892B2

公开(公告)日：2009-01-20

申请号：US11513196

申请日：2006-08-31

Applicant: Chui-fu Chiu ,  Wen-Bin Wu

Inventor： Chui-fu Chiu ,  Wen-Bin Wu

IPC: G06F17/50

CPC classification number: G03F9/7076 ,  G03F1/42 ,  G03F7/70633 ,  G03F7/70683

Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuration on the substrate was damaged during process.

Abstract translation: 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第一矩形区域和所述第三矩形区域具有相同的第一图案构造，所述第一图案构造具有第一图案元素，所述第二矩形区域的长边和所述第四矩形区域的长边平行 并且第二和第四矩形区域具有相同的具有第二图案元素的第二图案构造，第一矩形区域的长边与第二矩形区域的长边垂直; 其中，所述第一图案元件与所述第二图案元件不同，用于当所述基板上的所述第一图案配置在处理期间被损坏时，所述第二图案构造被选择为对齐。

公开(公告)号：US09017926B2

公开(公告)日：2015-04-28

申请号：US13603427

申请日：2012-09-05

Applicant: Chui-Fu Chiu

Inventor： Chui-Fu Chiu

IPC: G03F9/00 ,  G03F1/56 ,  G03F7/00 ,  G03F7/20

CPC classification number: G03F1/56 ,  G03F7/00 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7073 ,  Y10T428/24802

Abstract: A method of forming an overlay mark is provided. A plurality of photoresist patterns are formed on a substrate. Each of the photoresist patterns includes a first strip and a plurality of second strips arranged in parallel. The first strip crosses the second strips to form a fence shape. Further, there is a space between two adjacent photoresist patterns, and the space is fence-shaped. A plurality of islands are formed in each of the spaces to form dot type strip patterns. The photoresist patterns are removed, and the dot type strip patterns serve as the overlay mark.

Abstract translation: 提供了一种形成覆盖标记的方法。 在基板上形成多个光刻胶图案。 每个光致抗蚀剂图案包括第一条和平行布置的多个第二条。 第一条带穿过第二条带形成栅栏形状。 此外，在两个相邻的光致抗蚀剂图案之间存在空间，并且该空间是栅栏形的。 在每个空间中形成多个岛以形成点型带状图案。 去除光致抗蚀剂图案，并且点型条纹图案用作覆盖标记。

公开(公告)号：US20080032205A1

公开(公告)日：2008-02-07

申请号：US11513288

申请日：2006-08-31

Applicant: Chui-fu Chiu ,  Wen-Bin Wu

Inventor： Chui-fu Chiu ,  Wen-Bin Wu

IPC: G03F1/00 ,  G03F9/00 ,  G03C5/00 ,  H01L23/544

CPC classification number: G03F7/70633

Abstract: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein each pattern configuration has at least two different pattern elements allowing other pattern elements be chosen to align when any one of the pattern elements on the substrate was damaged during process.

Abstract translation: 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第三矩形区域的一侧彼此平行，并且所述第二矩形区域的长边和所述第四矩形区域的长边彼此平行，所述第一矩形区域的长边垂直于所述长边 的第二矩形区域; 其中每个图案配置具有至少两个不同的图案元件，当在处理期间衬底上的任何一个图案元件被损坏时，允许其它图案元件被选择以对准。

公开(公告)号：US08745546B2

公开(公告)日：2014-06-03

申请号：US13340278

申请日：2011-12-29

Applicant: Chui-Fu Chiu

Inventor： Chui-Fu Chiu

IPC: G06F17/50 ,  G06K9/00 ,  G03C5/00

CPC classification number: G03F1/42 ,  G03F7/70633 ,  G03F7/70683

Abstract: A mask overlay method, and a mask and a semiconductor device using the same are disclosed. According to the disclosed mask overlay technique, test marks and front layer overlay marks corresponding to a plurality of overlay mark designs are generated in a first layer of a semiconductor device. The test patterns generating the test marks each include a first sub pattern and a second sub pattern. Note that the first sub pattern has the same design as a front layer overlay pattern (which generates the front layer overlay mark corresponding thereto). Based on the test marks, performances of the plurality of overlay mark designs are graded. The front layer overlay mark corresponding to the overlay mark design having the best performance is regarded as an overlay reference for a mask of a second layer of the semiconductor device.

Abstract translation: 公开了掩模覆盖法，掩模和使用其的半导体器件。 根据所公开的掩模覆盖技术，在半导体器件的第一层中产生与多个覆盖标记设计相对应的测试标记和前面层覆盖标记。 产生测试标记的测试图案各自包括第一子图案和第二子图案。 注意，第一子图案具有与前层覆盖图案相同的设计（其产生与其对应的前层叠加标记）。 基于测试标记，多个叠加标记设计的性能被分级。 对应于具有最佳性能的重叠标记设计的前层叠加标记被认为是半导体器件的第二层的掩模的覆盖基准。

公开(公告)号：US20140065380A1

公开(公告)日：2014-03-06

申请号：US13603427

申请日：2012-09-05

Applicant: Chui-Fu Chiu

Inventor： Chui-Fu Chiu

IPC: B32B3/10 ,  B44C1/22

CPC classification number: G03F1/56 ,  G03F7/00 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7073 ,  Y10T428/24802

Abstract: A method of forming an overlay mark is provided. A plurality of photoresist patterns are formed on a substrate. Each of the photoresist patterns includes a first strip and a plurality of second strips arranged in parallel. The first strip crosses the second strips to form a fence shape. Further, there is a space between two adjacent photoresist patterns, and the space is fence-shaped. A plurality of islands are formed in each of the spaces to form dot type strip patterns. The photoresist patterns are removed, and the dot type strip patterns serve as the overlay mark.

Abstract translation: 提供了一种形成覆盖标记的方法。 在基板上形成多个光刻胶图案。 每个光致抗蚀剂图案包括第一条和平行布置的多个第二条。 第一条带穿过第二条带形成栅栏形状。 此外，在两个相邻的光致抗蚀剂图案之间存在空间，并且该空间是栅栏形的。 在每个空间中形成多个岛以形成点型带状图案。 去除光致抗蚀剂图案，并且点型条纹图案用作覆盖标记。

公开(公告)号：US20120237857A1

公开(公告)日：2012-09-20

申请号：US13049047

申请日：2011-03-16

Applicant: Chui Fu CHIU

Inventor： Chui Fu CHIU

IPC: G03F1/00 ,  C23F1/00 ,  G03F7/20

CPC classification number: G03F1/42 ,  G03F7/70633

Abstract: The present invention relates to a photomask and a method for forming an overlay mark in a substrate using the same. The photomask comprises a plurality of patterns. At least one of the patterns comprises a plurality of ring areas and a plurality of inner areas enclosed by the ring areas, wherein the light transmittancy of the ring areas is different from that of the inner areas. When the photomask is applied in a photolithography process, the formed overlay mark has a large thickness. Therefore, the contrast is high when a metrology process is performed, and it is easy to find the overlay mark.

Abstract translation: 本发明涉及一种光掩模和一种在使用该掩模的基板中形成覆盖标记的方法。 光掩模包括多个图案。 至少一个图案包括多个环形区域和由环形区域包围的多个内部区域，其中环形区域的光透射率不同于内部区域的透光率。 当在光刻工艺中应用光掩模时，形成的覆盖标记具有较大的厚度。 因此，当进行计量过程时，对比度很高，并且容易找到重叠标记。

公开(公告)号：US20120140193A1

公开(公告)日：2012-06-07

申请号：US12960319

申请日：2010-12-03

Applicant: Chui-Fu Chiu ,  Chiang-Lin Shih

Inventor： Chui-Fu Chiu ,  Chiang-Lin Shih

IPC: G03B27/42

CPC classification number: H01L23/544 ,  G03F9/7003 ,  G03F9/7088 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dynamic wafer alignment method and an exposure scanner system are provided. The exposure scanner system having a scan path, includes an exposure apparatus, an optical sensor apparatus and a wafer stage. The method comprises the steps of: (a) providing a wafer, having a plurality of shot areas, wherein each shot area has a plurality of alignment marks thereon; (b) forming a photo-resist layer on the wafer; (c) detecting the alignment marks at a portion of a shot area along the scan path by the optical sensor apparatus to obtain compensation data for wafer alignment of the portion of the shot area; (d) performing real time feedback of the compensation data for wafer alignment to the wafer stage; (e) exposing the photo-resist layer at the portion of the shot area along the scan path; (f) continuously repeating the steps (c) to (e) at the shot area along the scan path until all of the photo-resist layer at the shot area are exposed; and (g) repeating the step (f) until the photo-resist layer of all of the shot areas on the wafer are exposed.

Abstract translation: 提供动态晶片对准方法和曝光扫描器系统。 具有扫描路径的曝光扫描器系统包括曝光装置，光学传感器装置和晶片台。 该方法包括以下步骤：（a）提供具有多个拍摄区域的晶片，其中每个拍摄区域上具有多个对准标记; （b）在晶片上形成光刻胶层; （c）通过光学传感器装置检测沿着扫描路径的拍摄区域的一部分处的对准标记，以获得用于拍摄区域的该部分的晶片对准的补偿数据; （d）对晶片台进行晶片对准的补偿数据的实时反馈; （e）沿着扫描路径在照射区域的部分处暴露光致抗蚀剂层; （f）沿扫描路径连续地重复步骤（c）至（e），直到所有的光刻胶层都被曝光; 和（g）重复步骤（f），直到晶片上的所有照射区域的光致抗蚀剂层露出。