Method for manufacturing array substrate
    1.
    发明授权
    Method for manufacturing array substrate 有权
    阵列基板的制造方法

    公开(公告)号:US08551822B2

    公开(公告)日:2013-10-08

    申请号:US12005289

    申请日:2007-12-27

    Applicant: Chun-Hao Tung

    Inventor: Chun-Hao Tung

    CPC classification number: H01L27/1288 H01L27/1214

    Abstract: A method for manufacturing a substrate for a flat panel display device is disclosed. The present method uses photolithography with four masks to manufacture a TFT-LCD. After the third half-tone mask is used, the manufacturing of the TFTs and the defining of the pixel area of the substrate can be completed. The present method can avoid the alignment deviation and the generation of parasitic capacitance happened on the substrate made through the conventional photolithography with five masks. Therefore, the present method can reduce the costs and increase the yield. Moreover, the substrate for the TFT-LCD made by the present method can define a channel region in the semiconductor layer after the second half-tone mask. Hence, the subsequent manufacturing for forming a transparent conductive layer, a source, and a drain can be achieved by wet etching to effectively reduce the non-homogeneous etching for the channel region in the semiconductor layer.

    Abstract translation: 公开了一种用于制造平板显示装置用基板的方法。 本方法使用具有四个掩模的光刻制造TFT-LCD。 在使用第三半色调掩模之后,可以完成TFT的制造和衬底的像素区域的限定。 本方法可以避免通过具有五个掩模的常规光刻制成的衬底上发生的对准偏差和寄生电容的产生。 因此,本方法可以降低成本并提高产量。 此外,通过本方法制造的用于TFT-LCD的衬底可以在第二半色调掩模之后限定半导体层中的沟道区。 因此,用于形成透明导电层,源极和漏极的后续制造可以通过湿式蚀刻来实现,以有效地减少半导体层中的沟道区域的非均匀蚀刻。

    PIXEL STRUCTURE, DISPLAY PANEL, ELECTRO-OPTICAL APPARATUS AND MANUFACTURING METHOD OF THE SAME
    2.
    发明申请
    PIXEL STRUCTURE, DISPLAY PANEL, ELECTRO-OPTICAL APPARATUS AND MANUFACTURING METHOD OF THE SAME 有权
    像素结构,显示面板,电光设备及其制造方法

    公开(公告)号:US20090180066A1

    公开(公告)日:2009-07-16

    申请号:US12111929

    申请日:2008-04-29

    CPC classification number: G02F1/133553 G02F1/133555

    Abstract: A pixel structure disposed on a substrate having a plurality of protrudent patterns is provided. An area where the protrudent patterns are disposed defines a first display area. The arrangement of the protrudent patterns forms a plurality of arc loci. The arc loci have a same arc center disposed at a corner of the first display area. The abovementioned protrudent patterns avails improvement of a displaying effect of the pixel structure.

    Abstract translation: 提供了设置在具有多个凸起图案的基板上的像素结构。 突出图案的布置区域限定第一显示区域。 突出图案的布置形成多个弧形轨迹。 弧形轨迹具有设置在第一显示区域的角落处的相同弧中心。 上述突出图案可以改善像素结构的显示效果。

    Manufacturing method of pixel structure
    3.
    发明授权
    Manufacturing method of pixel structure 有权
    像素结构的制造方法

    公开(公告)号:US07858413B2

    公开(公告)日:2010-12-28

    申请号:US12701054

    申请日:2010-02-05

    Applicant: Chun-Hao Tung

    Inventor: Chun-Hao Tung

    CPC classification number: H01L27/1288 H01L27/124

    Abstract: A method of manufacturing the pixel structure is provided. The method includes forming a gate, a scan line connected to the gate, and at least one auxiliary pattern on a substrate. An insulating layer, a semiconductor layer, an ohmic contact layer, and a photoresist layer are formed in sequence. Afterwards, a single exposure and development is performed on the photoresist layer to form a first portion and a second portion. Next, the ohmic contact layer and the semiconductor layer which are not covered by the photoresist layer are removed to expose a part of the insulating layer. Next, the second portion of the photoresist layer is removed. Subsequently, a part of the thickness of the semiconductor layer not covered by the first portion is removed and the exposed insulating layer is removed, so as to form a channel layer and an insulating layer.

    Abstract translation: 提供了一种制造像素结构的方法。 该方法包括形成栅极,连接到栅极的扫描线以及衬底上的至少一个辅助图案。 依次形成绝缘层,半导体层,欧姆接触层和光致抗蚀剂层。 之后,在光致抗蚀剂层上进行一次曝光和显影以形成第一部分和第二部分。 接下来,去除未被光致抗蚀剂层覆盖的欧姆接触层和半导体层,以露出绝缘层的一部分。 接下来,去除光致抗蚀剂层的第二部分。 随后,去除未被第一部分覆盖的半导体层的厚度的一部分,并且去除暴露的绝缘层,以便形成沟道层和绝缘层。

    Manufacturing method of pixel structure
    4.
    发明授权
    Manufacturing method of pixel structure 有权
    像素结构的制造方法

    公开(公告)号:US07700388B2

    公开(公告)日:2010-04-20

    申请号:US11563824

    申请日:2006-11-28

    Applicant: Chun-Hao Tung

    Inventor: Chun-Hao Tung

    CPC classification number: H01L27/1288 H01L27/124

    Abstract: A method of manufacturing a pixel structure is provided. A gate, a scan line, and at least one first auxiliary pattern are formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate and the scan line and expose the first auxiliary pattern and a part of the scan line. A channel layer is formed on the gate insulating layer over the gate. A source, a drain, a data line, a top electrode, and at least one second auxiliary pattern are formed, wherein the data line is electrically connected to the exposed first auxiliary pattern and the second auxiliary pattern is electrically connected to the exposed scan line. A passivation layer and a pixel electrode are formed, and the pixel electrode is electrically connected to the drain and the top electrode.

    Abstract translation: 提供了一种制造像素结构的方法。 在基板上形成栅极,扫描线和至少一个第一辅助图案。 栅极绝缘层形成在衬底上以覆盖栅极和扫描线并暴露第一辅助图案和扫描线的一部分。 在栅极上的栅极绝缘层上形成沟道层。 形成源极,漏极,数据线,顶部电极和至少一个第二辅助图案,其中数据线电连接到暴露的第一辅助图案,并且第二辅助图案电连接到暴露的扫描线 。 形成钝化层和像素电极,并且像素电极电连接到漏极和顶部电极。

    Pixel unit and display device utilizing the same
    5.
    发明授权
    Pixel unit and display device utilizing the same 有权
    像素单元和利用它的显示设备

    公开(公告)号:US07659956B2

    公开(公告)日:2010-02-09

    申请号:US11563718

    申请日:2006-11-28

    CPC classification number: G02F1/136213 G02F2001/13606

    Abstract: A pixel unit comprising a first metal layer and a second metal layer. The first metal layer comprises a gate electrode and a first electrode. The second metal layer comprises a drain electrode, a source electrode, and a second electrode. The drain electrode overlaps the gate electrode in a first overlapping region. The source electrode overlaps the gate electrode in a second overlapping region. The second electrode overlaps the first electrode in a third overlapping region. The size of the first electrode approximates that of the second electrode. The first electrode and the second electrode are staggered.

    Abstract translation: 一种像素单元,包括第一金属层和第二金属层。 第一金属层包括栅电极和第一电极。 第二金属层包括漏电极,源电极和第二电极。 漏电极在第一重叠区域与栅电极重叠。 源电极在第二重叠区域与栅电极重叠。 第二电极在第三重叠区域与第一电极重叠。 第一电极的尺寸近似于第二电极的尺寸。 第一电极和第二电极交错。

    Mask and fabrication method thereof and application thereof
    6.
    发明授权
    Mask and fabrication method thereof and application thereof 有权
    掩模及其制造方法及其应用

    公开(公告)号:US07648804B2

    公开(公告)日:2010-01-19

    申请号:US11413735

    申请日:2006-04-28

    Applicant: Chun-Hao Tung

    Inventor: Chun-Hao Tung

    CPC classification number: G03F1/32 G03F1/50 G03F1/54

    Abstract: A mask including a transparent substrate, a semi-transparent layer and a film layer is provided. The transparent substrate at least has a first region, a second region and a third region. The semi-transparent layer covers the second region and the third region of the transparent substrate and exposes the first region. The film layer covers the halftone layer disposed at the third region, to make the transmittance of the third region lower than that of the second region. The halftone layer and the film can be made of phase shift layers, to form a phase shift mask. Besides, several fabrication methods of the mask are also disclosed to form the above-mentioned mask.

    Abstract translation: 提供了包括透明基板,半透明层和膜层的掩模。 透明基板至少具有第一区域,第二区域和第三区域。 半透明层覆盖透明基板的第二区域和第三区域并暴露第一区域。 膜层覆盖设置在第三区域的半色调层,以使第三区域的透射率低于第二区域的透射率。 半色调层和膜可以由相移层制成,以形成相移掩模。 此外,还公开了掩模的几种制造方法以形成上述掩模。

    MANUFACTURING METHOD OF PIXEL STRUCTURE
    8.
    发明申请
    MANUFACTURING METHOD OF PIXEL STRUCTURE 有权
    像素结构的制造方法

    公开(公告)号:US20070243648A1

    公开(公告)日:2007-10-18

    申请号:US11563824

    申请日:2006-11-28

    Applicant: Chun-Hao Tung

    Inventor: Chun-Hao Tung

    CPC classification number: H01L27/1288 H01L27/124

    Abstract: A method of manufacturing a pixel structure is provided. A gate, a scan line, and at least one first auxiliary pattern are formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate and the scan line and expose the first auxiliary pattern and a part of the scan line. A channel layer is formed on the gate insulating layer over the gate. A source, a drain, a data line, a top electrode, and at least one second auxiliary pattern are formed, wherein the data line is electrically connected to the exposed first auxiliary pattern and the second auxiliary pattern is electrically connected to the exposed scan line. A passivation layer and a pixel electrode are formed, and the pixel electrode is electrically connected to the drain and the top electrode.

    Abstract translation: 提供了一种制造像素结构的方法。 在基板上形成栅极,扫描线和至少一个第一辅助图案。 栅极绝缘层形成在衬底上以覆盖栅极和扫描线并暴露第一辅助图案和扫描线的一部分。 在栅极上的栅极绝缘层上形成沟道层。 形成源极,漏极,数据线,顶部电极和至少一个第二辅助图案,其中数据线电连接到暴露的第一辅助图案,并且第二辅助图案电连接到暴露的扫描线 。 形成钝化层和像素电极,并且像素电极电连接到漏极和顶部电极。

    Method for fabricating color filter layer
    10.
    发明授权
    Method for fabricating color filter layer 有权
    彩色滤光片的制作方法

    公开(公告)号:US07811724B2

    公开(公告)日:2010-10-12

    申请号:US11695620

    申请日:2007-04-03

    Abstract: A method of fabricating a color filter layer is provided. First, an active device array substrate having an opaque metal pattern formed thereon is provided. Next, a back-side exposure process is performed on the active device array substrate using the opaque metal layer as a mask to form a black matrix defining a plurality of pixel regions. Next, a plurality of color filter patterns is formed in the pixel regions.

    Abstract translation: 提供了制造滤色器层的方法。 首先,提供其上形成有不透明金属图案的有源器件阵列基板。 接下来,使用不透明金属层作为掩模在有源器件阵列基板上进行背面曝光处理,以形成限定多个像素区域的黑矩阵。 接下来,在像素区域中形成多个滤色器图案。

Patent Agency Ranking