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    SEMICONDUCTOR PROCESS
    1.
    发明申请
    SEMICONDUCTOR PROCESS 有权
    半导体工艺

    公开(公告)号：US20130316506A1

    公开(公告)日：2013-11-28

    申请号：US13479279

    申请日：2012-05-24

    申请人： Chung-Fu Chang ,  Yu-Hsiang Hung ,  Shin-Chuan Huang ,  Chia-Jong Liu ,  Yen-Liang Wu ,  Pei-Yu Chou

    发明人： Chung-Fu Chang ,  Yu-Hsiang Hung ,  Shin-Chuan Huang ,  Chia-Jong Liu ,  Yen-Liang Wu ,  Pei-Yu Chou

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823425 ,  H01L21/823412 ,  H01L21/823468 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864

    摘要： A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.

    摘要翻译： 半导体工艺包括以下步骤。 在基板上形成栅极结构。 在栅极结构旁边的基板上形成主间隔物。 源极/漏极形成在主间隔物旁边的衬底中。 在形成源极/漏极之后，在主间隔物旁边的衬底中形成外延结构。 栅极结构可以分别形成在衬底的第一区域和第二区域中。 在衬底上分别在两个栅极结构旁边形成主间隔物。 源极/漏极分别在两个间隔物的旁边的衬底中形成。 在形成两个源极/漏极之后，在主衬垫的旁边分别在衬底中形成外延结构。

    Semiconductor process
    2.
    发明授权
    Semiconductor process 有权
    半导体工艺

    公开(公告)号：US08772120B2

    公开(公告)日：2014-07-08

    申请号：US13479279

    申请日：2012-05-24

    申请人： Chung-Fu Chang ,  Yu-Hsiang Hung ,  Shin-Chuan Huang ,  Chia-Jong Liu ,  Yen-Liang Wu ,  Pei-Yu Chou

    发明人： Chung-Fu Chang ,  Yu-Hsiang Hung ,  Shin-Chuan Huang ,  Chia-Jong Liu ,  Yen-Liang Wu ,  Pei-Yu Chou

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823425 ,  H01L21/823412 ,  H01L21/823468 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864

    摘要： A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.

    摘要翻译： 半导体工艺包括以下步骤。 在基板上形成栅极结构。 在栅极结构旁边的基板上形成主间隔物。 源极/漏极形成在主间隔物旁边的衬底中。 在形成源极/漏极之后，在主间隔物旁边的衬底中形成外延结构。 栅极结构可以分别形成在衬底的第一区域和第二区域中。 在衬底上分别在两个栅极结构旁边形成主间隔物。 源极/漏极分别在两个间隔物的旁边的衬底中形成。 在形成两个源极/漏极之后，在主衬垫的旁边分别在衬底中形成外延结构。

    Interacting Exercise Device
    4.
    发明申请
    Interacting Exercise Device 审中-公开

    公开(公告)号：US20190151701A1

    公开(公告)日：2019-05-23

    申请号：US16192710

    申请日：2018-11-15

    申请人： Chung-Fu Chang

    发明人： Chung-Fu Chang

    IPC分类号： A63B21/06 ,  A63B21/22

    摘要： An interacting exercise device is revealed. The interacting exercise device includes a driving device and a non-concentric actuator driven by the driving device. While the driving device is operated to rotate, the non-concentric actuator vibrates and the vibration generated is delivered to the interacting exercise device for interacting shaking fitness.

    Exercise machine having changeable damping mechanism
    5.
    发明授权
    Exercise machine having changeable damping mechanism 有权

    公开(公告)号：US10166424B2

    公开(公告)日：2019-01-01

    申请号：US15460332

    申请日：2017-03-16

    申请人： Chung-Fu Chang

    发明人： Chung-Fu Chang

    IPC分类号： A63B22/02 ,  A63B69/16 ,  A63B22/06 ,  A63B21/00 ,  A63B21/005 ,  A63B21/008 ,  A63B21/22 ,  A63B71/00

    摘要： An exercise machine having a changeable damping mechanism is provided. A first transmission rope on a first shifting wheel of a first rotating shaft drives a damping device of a damping shaft to generate a relative damping action for training the leg muscular endurance of the user. Through a first changeable damping mechanism, the first transmission rope, which having stretch elasticity on the first shifting wheel is controlled to adjust the rotational speed according to the gear ratio, which may be in cooperation with a second transmission rope, which having stretch elasticity on a second shifting wheel through a second changeable damping mechanism, and is in cooperation with the damping action of a magnetic control wheel or a blower fan of the damping device to extend the range of damping control for different users to train muscular endurance.

    Method of making a buffer board of a treadmill
    6.
    发明授权
    Method of making a buffer board of a treadmill 有权

    公开(公告)号：US09724842B2

    公开(公告)日：2017-08-08

    申请号：US14852858

    申请日：2015-09-14

    申请人： Chung-Fu Chang

    发明人： Chung-Fu Chang

    IPC分类号： A63B22/02 ,  B29C43/00 ,  B27N3/20

    CPC分类号： B27N3/203 ,  B27N3/02 ,  B27N7/005 ,  B29C43/00

    摘要： A method of making a buffer board of a treadmill includes a sizing step, a shade drying step, a presetting step, a clamping and heat-pressing step, a cooling step, and a die opening step. The method can easily make the desired buffer board adapted to the treadmill and can only change different dies to make buffer boards with different structures when an upper die and a lower die of a die set provide protrusions, flat surfaces or depressed surfaces, thereby reducing the manufacturing cost.

    MULTI-GAS SENSOR AND METHOD OF FABRICATING THE SENSOR
    8.
    发明申请
    MULTI-GAS SENSOR AND METHOD OF FABRICATING THE SENSOR 有权
    多气体传感器和传感器的制作方法

    公开(公告)号：US20120007099A1

    公开(公告)日：2012-01-12

    申请号：US13177551

    申请日：2011-07-06

    申请人： Wen-Chau Liu ,  Huey-Ing Chen ,  Tsung-Han Tsai ,  Tai-You Chen ,  Chung-Fu Chang ,  Chi-Hsiang Hsu

    发明人： Wen-Chau Liu ,  Huey-Ing Chen ,  Tsung-Han Tsai ,  Tai-You Chen ,  Chung-Fu Chang ,  Chi-Hsiang Hsu

    IPC分类号： H01L29/66 ,  H01L21/20

    CPC分类号： G01N27/125

    摘要： The present invention is a multi-gas sensor and a method for fabricating the multi-gas sensor.The multi-gas sensor comprises a substrate, an epitaxial layer, a metal oxide layer, a first metal layer, a second metal layer and multiple third metal layers.The method for fabricating the multi-gas sensor comprises steps of forming an epitaxial layer on a substrate; etching the epitaxial layer to form a first epitaxial structure and a second epitaxial structure a fixed distance from the first epitaxial structure; forming a metal oxide layer on the first epitaxial structure; forming a first metal layer that has at least two metal layers on the second epitaxial structure; forming a second metal layer a fixed distance from the first metal layer on the second epitaxial structure; forming third metal layers respectively on the metal oxide layer, the first metal layer and the second metal layer.

    摘要翻译： 本发明是一种多气体传感器和多气体传感器的制造方法。 多气体传感器包括衬底，外延层，金属氧化物层，第一金属层，第二金属层和多个第三金属层。 制造多气体传感器的方法包括在基板上形成外延层的步骤; 蚀刻所述外延层以形成与所述第一外延结构固定距离的第一外延结构和第二外延结构; 在所述第一外延结构上形成金属氧化物层; 在所述第二外延结构上形成具有至少两个金属层的第一金属层; 在所述第二外延结构上形成与所述第一金属层固定距离的第二金属层; 在金属氧化物层，第一金属层和第二金属层上分别形成第三金属层。

    Fingerprint classification system
    9.
    发明授权
    Fingerprint classification system 失效
    指纹分类系统

    公开(公告)号：US5572597A

    公开(公告)日：1996-11-05

    申请号：US468832

    申请日：1995-06-06

    申请人： Chung-Fu Chang ,  Edward E. Hilbert

    发明人： Chung-Fu Chang ,  Edward E. Hilbert

    IPC分类号： G06K9/00 ,  G06K9/62 ,  G06K9/66

    CPC分类号： G06K9/0008 ,  G06K9/00087 ,  G06K9/6226

    摘要： A technique for fingerprint classification and/or identification, in which a fingerprint is defined by areas containing patterns of ridges and valleys. At least one local pattern is determined using locations and characterizations of the fingerprint, which are indicated by a rapid change in direction of the ridges and valleys. The fingerprint is classified into types based upon the relative locations and characterizations of said local pattern(s). The fingerprint identification process can utilize minutiae location and angles as well as local pattern characterizations. Neural networks are utilized in determining the local patterns. The amount of data required to store data defining the fingerprints using the local pattern and/or minutiae techniques is significantly reduced.

    摘要翻译： 一种用于指纹分类和/或识别的技术，其中指纹由包含脊和谷的图案的区域定义。 使用指纹的位置和特征确定至少一个局部图案，其由脊和谷的方向的快速变化指示。 基于所述局部图案的相对位置和特征，将指纹分类为类型。 指纹识别过程可以利用细节位置和角度以及局部模式表征。 神经网络用于确定局部模式。 使用本地模式和/或细节技术存储定义指纹的数据所需的数据量显着减少。

    PEDAL-TYPE VIBRATIONAL APPARATUS
    10.
    发明申请
    PEDAL-TYPE VIBRATIONAL APPARATUS 审中-公开

    公开(公告)号：US20190201741A1

    公开(公告)日：2019-07-04

    申请号：US15860068

    申请日：2018-01-02

    申请人： Chung-Fu Chang

    发明人： Chung-Fu Chang

    IPC分类号： A63B22/18 ,  B06B1/16 ,  F16H19/04 ,  F16H1/00 ,  F16H1/06 ,  F16H7/02 ,  A63B22/06

    摘要： A pedal-type vibrational apparatus includes a seat body, a pedal assembly, a gear plate assembly, a drive assembly and an eccentric assembly, like a lever structure. By treading the pedal assembly, the gear plate assembly drives the drive assembly to rotate. The drive assembly is connected with the eccentric assembly. The user can fully exercise the muscles of the body during exercise, and the vibrational effect generated by the eccentric assembly can stimulate the acupuncture points of the body to improve the blood circulation. The left and right pedals can be treaded in turn to continuously drive a gear to rotate in the same direction so as to achieve the effect of acceleration and to enhance vibrations.