公开(公告)号：US20160351708A1

公开(公告)日：2016-12-01

申请号：US15039564

申请日：2014-12-17

Applicant: DENSO CORPORATION

Inventor： Hiroshi KAMEOKA ,  Shigeki TAKAHASHI ,  Akira YAMADA ,  Atsushi KASAHARA

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40 ,  H01L27/12 ,  H01L29/06

CPC classification number: H01L29/7824 ,  H01L21/84 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/66681

Abstract: A semiconductor device includes a lateral transistor having: a semiconductor substrate including a drift layer; a first impurity layer in the drift layer; a channel layer in the drift layer; a second impurity layer in the channel layer; a separation insulation film on the drift layer between the channel layer and the first impurity layer; a gate insulation film on a channel region between the second impurity layer and the drift layer connected with the separation insulation film; a gate electrode on the gate insulation film and the separation insulation film; a first electrode connected with the first impurity layer; a second electrode connected with the second impurity layer and the channel layer; and a field plate on the separation insulation film between the gate electrode and the first electrode and connected with the first electrode. The field plate is larger than the gate electrode in a current direction.

Abstract translation: 一种半导体器件包括横向晶体管，其具有：包括漂移层的半导体衬底; 漂移层中的第一杂质层; 漂移层中的沟道层; 沟道层中的第二杂质层; 在沟道层和第一杂质层之间的漂移层上的分离绝缘膜; 在第二杂质层与与分离绝缘膜连接的漂移层之间的沟道区上的栅极绝缘膜; 栅绝缘膜上的栅电极和分离绝缘膜; 与第一杂质层连接的第一电极; 与第二杂质层和沟道层连接的第二电极; 以及在栅电极和第一电极之间的分离绝缘膜上的与第一电极连接的场板。 场板在电流方向上大于栅电极。