公开(公告)号：US20150360955A1

公开(公告)日：2015-12-17

申请号：US14820184

申请日：2015-08-06

Applicant: EMPIRE TECHNOLOGY DEVELOPMENT LLC

Inventor： SETH ADRIAN MILLER

IPC: C01B31/04

CPC classification number: C01B31/0446 ,  B01J19/22 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/194

Abstract: Technologies described herein are generally related to graphene production. In some examples, a system is described that may include a first container, a second container, and/or a chamber. The first container may include a first solution with a reducing agent, while the second container may include a second solution with graphene oxide. The chamber may be in operative relationship with the first and the second containers, and configured effective to receive the first and second solutions and provide reaction conditions that facilitate contact of the first and second solutions at an interfacial region sufficient to produce graphene at the interfacial region.

Abstract translation: 本文描述的技术通常与石墨烯生产有关。 在一些示例中，描述了可以包括第一容器，第二容器和/或室的系统。 第一容器可以包括具有还原剂的第一溶液，而第二容器可以包括具有石墨烯氧化物的第二溶液。 腔室可以与第一和第二容器处于操作关系，并且被配置为有效地接收第一和第二溶液并且提供促进第一和第二溶液在足以在界面区域产生石墨烯的界面区域的接触的反应条件 。

公开(公告)号：US20140038103A1

公开(公告)日：2014-02-06

申请号：US14048682

申请日：2013-10-08

Applicant: EMPIRE TECHNOLOGY DEVELOPMENT, LLC

Inventor： SETH ADRIAN MILLER

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0045 ,  G03F7/2045 ,  G03F7/2053

Abstract: Technologies are generally described for a photoresist and methods and systems effective to form a pattern in a photoresist on a substrate. In some examples, the photoresist includes a resin, a photoinitiator and a photoinhibitor. The photoinitiator may be effective to generate a first reactant upon the absorption of at least one photon of a particular wavelength of light. The first reactant may be effective to render the resin soluble or insoluble in a photoresist developer. The photoinhibitor may be effective to generate a second reactant upon the absorption of at least one photon of the particular wavelength of light. The second reactant may be effective to inhibit the first reactant.

Abstract translation: 通常描述了用于光致抗蚀剂的技术，并且有效地在基板上的光致抗蚀剂中形成图案的方法和系统。 在一些实例中，光致抗蚀剂包括树脂，光引发剂和光抑制剂。 在吸收特定波长的光的至少一个光子时，光引发剂可以有效地产生第一反应物。 第一反应物可能有效地使树脂溶解或不溶于光致抗蚀剂显影剂。 光吸收剂可以有效地在吸收特定波长的光的至少一个光子时产生第二反应物。 第二反应物可能有效抑制第一反应物。

公开(公告)号：US20160009562A1

公开(公告)日：2016-01-14

申请号：US14657886

申请日：2015-03-13

Applicant: EMPIRE TECHNOLOGY DEVELOPMENT LLC

Inventor： SETH ADRIAN MILLER ,  THOMAS A. YAGER

IPC: C01B31/04 ,  B05C3/02

CPC classification number: C01B32/194 ,  B05C3/02 ,  B05C3/20 ,  B05D5/12 ,  B32B3/10 ,  B32B9/04 ,  C01B32/182 ,  C01B32/184 ,  Y10T428/24331

Abstract: Technologies are generally described for method and systems effective to at least partially alter a defect in a layer including graphene. In some examples, the methods may include receiving the layer on a substrate where the layer includes at least some graphene and at least some defect areas in the graphene. The defect areas may reveal exposed areas of the substrate. The methods may also include reacting the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas. The methods may further include adhering graphene oxide to the at least one cationic area to produce a graphene oxide layer. The methods may further include reducing the graphene oxide layer to produce at least one altered defect area in the layer.

公开(公告)号：US20130309462A1

公开(公告)日：2013-11-21

申请号：US13950923

申请日：2013-07-25

Applicant: EMPIRE TECHNOLOGY DEVELOPMENT, LLC

Inventor： THOMAS A. YAGER ,  SETH ADRIAN MILLER

IPC: G03F7/26

CPC classification number: G03F7/26 ,  G03F7/091 ,  G03F7/095 ,  Y10T428/12625 ,  Y10T428/24612 ,  Y10T428/24851

Abstract: Technologies are generally described for methods, systems, and structures that include patterns formed by optical lithography. In some example methods, a photoresist layer is applied to a substrate, and a grapheme layer can be applied to the photoresist layer. Light can be applied through a mask to the graphene layer, where the mask includes a pattern. The light can form the pattern on the graphene layer such that the pattern forms on the photoresist layer.

Abstract translation: 通常描述包括通过光学光刻形成的图案的方法，系统和结构的技术。 在一些示例性方法中，将光致抗蚀剂层施加到基板上，并且可以将图形层施加到光致抗蚀剂层。 光可以通过掩模施加到石墨烯层，其中掩模包括图案。 光可以在石墨烯层上形成图案，使得在光致抗蚀剂层上形成图案。

公开(公告)号：US20160002048A1

公开(公告)日：2016-01-07

申请号：US14857316

申请日：2015-09-17

Applicant: EMPIRE TECHNOLOGY DEVELOPMENT LLC

Inventor： SETH ADRIAN MILLER ,  GARY L. DUERKSEN

IPC: C01B31/04

CPC classification number: B05D3/007 ,  B01D65/108 ,  B01D69/10 ,  B01D71/021 ,  B05D2259/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  Y10T428/24339

Abstract: Technologies described herein are generally related to systems and processes for repairing a graphene membrane on a support. A chamber may receive a layer of graphene on a support. The layer of graphene may include a hole. A first container including an initiator may be effective to apply an initiator through the hole to the support to functionalize the support and produce an initiator layer on the support. A second container including an activator may be effective to apply an activator through the hole to the initiator layer to activate the initiator layer. The application of the activator may further be effective to grow a polymer from the initiator layer. The growth of the polymer may be effective to produce a polymer plug in the hole and effective to repair at least a portion of the layer of graphene.

Abstract translation: 本文描述的技术通常涉及用于修复载体上的石墨烯膜的系统和方法。 腔室可以在支撑件上接收一层石墨烯。 石墨烯层可以包括孔。 包括引发剂的第一容器可以有效地将引发剂通过孔施加到载体上以使载体官能化并在载体上产生引发剂层。 包括活化剂的第二容器可以有效地将活化剂通过孔施加到引发剂层以活化引发剂层。 活化剂的应用可以进一步有效地从引发剂层生长聚合物。 聚合物的生长可以有效地在孔中产生聚合物塞并有效地修复石墨烯层的至少一部分。

公开(公告)号：US20140230733A1

公开(公告)日：2014-08-21

申请号：US14265991

申请日：2014-04-30

Applicant: EMPIRE TECHNOLOGY DEVELOPMENT, LLC

Inventor： SETH ADRIAN MILLER

IPC: C01B31/04

CPC classification number: C01B32/186 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  C23C16/00

Abstract: Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area.

Abstract translation: 一般描述了一种方法和系统的技术，该方法和系统被配置为有效地改变包括石墨烯在内的衬底上的层中的缺陷区域。 示例性方法可以包括接收和加热层以产生加热层并将加热层暴露于第一气体以产生第一暴露层，其中第一气体可以包括胺。 该方法还可以包括将第一暴露层暴露于第一惰性气体以产生第二暴露层，并将第二暴露层暴露于第二气体以产生第三暴露层，其中第二气体可包括丙烷或硼烷。 第二暴露层暴露于第二气体可以至少部分地改变缺陷区域。