公开(公告)号：US12272560B2

公开(公告)日：2025-04-08

申请号：US17559906

申请日：2021-12-22

Applicant: ENTEGRIS, INC.

Inventor： SeungHyun Chae ,  SeongJin Hong ,  Eric Hong ,  Juhee Yeo ,  WonLae Kim ,  JeongYeol Yang

IPC: H01L21/31 ,  C23F1/30 ,  C23F1/44 ,  C23F11/04 ,  H01L21/3105

Abstract: Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided.

公开(公告)号：US20220208553A1

公开(公告)日：2022-06-30

申请号：US17559906

申请日：2021-12-22

Applicant: ENTEGRIS, INC.

Inventor： SeungHyun Chae ,  SeongJin Hong ,  Eric Hong ,  Juhee Yeo ,  WonLae Kim ,  JeongYeol Yang

IPC: H01L21/3105 ,  C23F1/30 ,  C23F1/44 ,  C23F11/04

Abstract: Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided.

公开(公告)号：US20230030323A1

公开(公告)日：2023-02-02

申请号：US17949956

申请日：2022-09-21

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC: C23F1/38 ,  H01L21/3213

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

公开(公告)号：US11492709B2

公开(公告)日：2022-11-08

申请号：US17230633

申请日：2021-04-14

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC: C23F1/38 ,  H01L21/3213

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

公开(公告)号：US20250019590A1

公开(公告)日：2025-01-16

申请号：US18806681

申请日：2024-08-15

Applicant: ENTEGRIS, INC.

Inventor： Eric Hong ,  SeongJin Hong ,  WonLae Kim ,  JeongYeol Yang ,  SeungHyun Chae ,  JuHee Yeo

IPC: C09K13/08 ,  H01L21/306

Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.

公开(公告)号：US12152187B2

公开(公告)日：2024-11-26

申请号：US17402126

申请日：2021-08-13

Applicant: ENTEGRIS, INC.

Inventor： Eric Hong ,  SeongJin Hong ,  WonLae Kim ,  JeongYeol Yang ,  SeungHyun Chae ,  JuHee Yeo

IPC: C09K13/08 ,  H01L21/306

Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.